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William Edward Burchanowski

age ~61

from Austin, TX

Also known as:
  • William E Burchanowski
  • Wm Burchanowski
  • Bill Burchanowski
  • Joanne Burchanows
Phone and address:
3904 Rosedale Ave, Austin, TX 78756

William Burchanowski Phones & Addresses

  • 3904 Rosedale Ave, Austin, TX 78756
  • 279 Longwood Dr, Bethlehem, PA 18020
  • New York, NY
  • Allentown, PA

Us Patents

  • Fast Testing Of D/A Converters

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  • US Patent:
    58413820, Nov 24, 1998
  • Filed:
    Mar 19, 1997
  • Appl. No.:
    8/820819
  • Inventors:
    Robert W. Walden - Bethlehem PA
    William E. Burchanowski - Bethlehem PA
  • Assignee:
    Lucent Technologies Inc. - Murray Hill NJ
  • International Classification:
    H03M 110
  • US Classification:
    341120
  • Abstract:
    Testing of digital-to-analog converters is accelerated by applying one or more different approaches. One approach relies on a switched capacitor, which lowers the overall capacitance of the converter during testing, thereby reducing the settling time for each code value. Another approach makes the duration of each testing step a function of the particular code value, rather than using the worst-case settling time for each testing step. Yet another approach uses a sequence of non-consecutive code values to determine whether each switch in the converter is functional. Using non-consecutive code values permits the use of partial settling times during converter testing. Each of the approaches can be used to accelerate the testing of D/A converters, whether they have linear or folded resistor strings.
  • Circuit And Method For Predicting Failure Rates In A Semiconductor Device

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  • US Patent:
    59862815, Nov 16, 1999
  • Filed:
    Oct 23, 1997
  • Appl. No.:
    8/956409
  • Inventors:
    William Edward Burchanowski - Bethlehem PA
    Jeffrey Alan Reed - Hellertown PA
  • Assignee:
    Lucent Technologies, Inc. - Murray Hill NJ
  • International Classification:
    H01L 2358
  • US Classification:
    257 48
  • Abstract:
    A circuit and method for detecting mobile ion contamination in a semiconductor device. The circuit uses two transistor structures on the same silicon chip as the circuit being tested to detect the presence (or absence) of mobile ions. The test includes imposing conditions on the silicon chip that may cause any mobile ions present therein to move within the structure. By measuring electrical parameters, such as a band gap voltage, across the transistors before and after the imposition of such conditions, a reliable indication of the presence or absence of mobile ions can be obtained.

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