Wen J Chen

Author:

Wen Jeng Chen

ISBN #:

0873394399

US Patent:

RE319686, Aug 13, 1985

Filed:

Jun 14, 1984

Appl. No.:

6/620637

Inventors:

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 3106
H01L 3118

US Classification:

136260

Abstract:

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. 0. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U. S.

US Patent:

43352669, Jun 15, 1982

Filed:

Dec 31, 1980

Appl. No.:

6/221761

Inventors:

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 3106
H01L 3118

US Classification:

136260

Abstract:

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U. S.

US Patent:

45230510, Jun 11, 1985

Filed:

Sep 27, 1983

Appl. No.:

6/536395

Inventors:

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 3106
H01L 3118

US Classification:

136260

Abstract:

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

US Patent:

51124106, May 12, 1992

Filed:

Aug 7, 1990

Appl. No.:

7/563494

Inventors:

Wen S. Chen - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 31072
H01L 3118
H01L 310328

US Classification:

136260

Abstract:

A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from the inclusion of Zn in the sulfide. A first solution comprising CdCl. sub. 2 2. 5H. sub. 2 O, NH. sub. 4 Cl, NH. sub. 4 OH and ZnCl. sub. 2, and a second solution comprising thiourea ((NH. sub. 2). sub. 2 CS) are combined and placed in a deposition cell, along with a substrate to form a thin i. e. 10 nm film of CdZnS on the substrate. This process can be sequentially repeated with to achieve deposition of independent multiple layers having different Zn concentrations.

US Patent:

51415640, Aug 25, 1992

Filed:

Jan 17, 1991

Appl. No.:

7/644069

Inventors:

Wen S. Chen - Seattle WA
John M. Stewart - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 31072
H01L 3118
H01L 310328

US Classification:

136258

Abstract:

A thin film heterojunction solar cell and a method of making it has a p-type layer of mixed ternary I-III-VI. sub. 2 semiconductor material in contact with an n-type layer of mixed binary II-VI semiconductor material. The p-type semiconductor material includes a low resistivity copper-rich region adjacent the back metal contact of the cell and a composition gradient providing a minority carrier mirror that improves the photovoltaic performance of the cell. The p-type semiconductor material preferably is CuInGaSe. sub. 2 or CuIn(SSe). sub. 2.

US Patent:

43924514, Jul 12, 1983

Filed:

Jul 2, 1981

Appl. No.:

6/278343

Inventors:

Reid A. Mickelsen - Bellevue WA
Wen S. Chen - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

C23C 1310

US Classification:

118690

Abstract:

Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI. sub. 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2. 5 microns to about 5. 0 microns (. congruent. 2. 5. mu. m to. congruent. 5. 0. mu. m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

US Patent:

50788043, Jan 7, 1992

Filed:

Aug 17, 1990

Appl. No.:

7/569411

Inventors:

Wen S. Chen - Seattle WA
John M. Stewart - Seattle WA

Assignee:

The Boeing Company - Seattle WA

International Classification:

H01L 31072
H01L 310328
H01L 3118

US Classification:

136260

Abstract:

A thin film I-III-VI. sub. 2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12. 5% at Air Mass 1. 5 illumination conditions and 10. 4% under AMO illumination can be achieved.