Warren P Reif
age ~68
from Weaverville, NC
- Also known as:
-
- Warren R Reif
- Warren F Reif
- Warren P Reis
- Paul Reif Warren
Warren Reif Phones & Addresses
- Weaverville, NC
- 507 Kings Rdg, Asheville, NC 28804 • 315 481-5999
- 625 Gatehouse Rd, Tully, NY 13159 • 315 696-5645
- 6509 Abilene Cv, Austin, TX 78749 • 512 288-3665
- 1025 Wickwood Ct, Fort Worth, TX 76131
- Colorado Springs, CO
- Davie, FL
- Syracuse, NY
- Bowie, MD
Work
-
Company:Lockheed martinApr 2005 to Mar 2014
-
Position:St staff electrical engineer
Education
-
Degree:Bachelors, Bachelor of Science In Electrical Engineering
-
Specialities:Electronics Engineering, Electronics
Skills
Rf/ Microwave Design • Electrical Engineering • Rf • Dod • Project Planning • Six Sigma • Systems Engineering • Military • Microwave Engineering • Requirements Management • Testing • Integration • Systems Design
Industries
Defense & Space
Resumes
Warren Reif
view sourceLocation:
Asheville, NC
Industry:
Defense & Space
Work:
Lockheed Martin Apr 2005 - Mar 2014
St Staff Electrical Engineer
St Staff Electrical Engineer
Education:
University of Illinois at Urbana - Champaign
Bachelors, Bachelor of Science
Bachelors, Bachelor of Science
Skills:
Rf/ Microwave Design
Electrical Engineering
Rf
Dod
Project Planning
Six Sigma
Systems Engineering
Military
Microwave Engineering
Requirements Management
Testing
Integration
Systems Design
Electrical Engineering
Rf
Dod
Project Planning
Six Sigma
Systems Engineering
Military
Microwave Engineering
Requirements Management
Testing
Integration
Systems Design
Us Patents
-
Voltage Bias And Temperature Compensation Circuit For Radio Frequency Power Amplifier
view source -
US Patent:57240043, Mar 3, 1998
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Filed:Jun 13, 1996
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Appl. No.:8/662551
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Inventors:Warren P. Reif - Fort Worth TX
William Beckwith - Chandler AZ -
Assignee:Motorola, Inc. - Schaumburg IL
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International Classification:H03F 316
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US Classification:330277
-
Abstract:A communication device (104) includes a radio frequency power amplifier (202) and a bias circuit (204). The power amplifier (202) includes a depletion mode MESFET (214) for RF power amplification. To properly bias the MESFET (214) in a circuit including logic components powered by a conventional battery (136), the bias circuit (204) includes a level shifter (223) to provide the necessary gate-to-source voltage for the MESFET (214). To maintain the RF output power from the communication device (104) constant over temperature, the bias circuit (204) output voltage varies over temperature to track the temperature variation of the MESFET (214).
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