Toshihiko Nakano

US Patent:

20090042107, Feb 12, 2009

Filed:

Jan 30, 2007

Appl. No.:

12/162420

Inventors:

Masahiro Kondou - Yamaguchi, JP
Toshihiko Nakano - San Jose CA, US

Assignee:

Mitsui Chemicals Inc. - Minato-ku Tokyo

International Classification:

G03F 1/00

US Classification:

430 5

Abstract:

A pellicle that is used in a semiconductor lithography process and that can be used in an exposure device with an optical system having a numerical aperture of 1.0 or above, is provided. The pellicle of the present invention uses a pellicle film that has had its film thickness adjusted so as to exhibit transmittance of 95% or above at angles of incidence of exposure light with respect to the pellicle film in the range of from 0 to 20. By using the pellicle of the present invention, it is possible to produce a semiconductor having an unprecedented fine circuit pattern at good yield while preventing adherence of dust to a reticle.