Steve H Cho

Address:

913 1/2 S Catalina St, Los Angeles, CA 90006

VIN:

JHMCP26859C017520

Make:

HONDA

Model:

ACCORD

Year:

2009

US Patent:

54925967, Feb 20, 1996

Filed:

Feb 4, 1994

Appl. No.:

8/191979

Inventors:

Steve T. Cho - Newport Beach CA

Assignee:

The Charles Stark Draper Laboratory, Inc. - Cambridge MA

International Classification:

G01P 904

US Classification:

1566321

Abstract:

A micromechanical tuning fork gyroscope fabricated by a dissolved silicon wafer process whereby electrostatic bonding forms a hermetic seal between an etched glass substrate, metal electrodes deposited thereon, and a silicon comb-drive tuning fork gyroscope. The dissolved silicon wafer process involves single sided processing of a silicon substrate, including the steps of etching recesses, diffusing an etch resistant dopant into the silicon substrate, and releasing various components of the silicon gyroscope by etching through the diffusion layer in desired locations. The glass substrate also undergoes single sided processing, including the steps of etching recesses, depositing a multi-metal system in the recesses, and selectively etching portions of the multi-metal system. One substrate is inverted over the other and aligned before anodic bonding of the two substrates is performed.

US Patent:

58375627, Nov 17, 1998

Filed:

Jul 7, 1995

Appl. No.:

8/499411

Inventors:

Steve T. Cho - Newport Beach CA

Assignee:

The Charles Stark Draper Laboratory, Inc. - Cambridge MA

International Classification:

H01L 2160
H01L 2148

US Classification:

438 51

Abstract:

A process for manufacturing a vacuum enclosure for a semiconductor device formed on a substrate with leads extending peripherally. Assembly of the enclosure is compatible with known batch fabrication techniques and is carried out at pressures required for optimal device operation. In a first embodiment, an intrinsic silicon shell is sealed to the substrate via electrostatic or anodic bonding with the leads diffusing into the shell. In a second embodiment, a thin interface layer of silicon or polysilicon is deposited on the substrate prior to electrostatic bonding a glass shell thereon. In a third embodiment, tunnels are formed between a lower peripheral edge of the shell and the substrate, allowing leads to pass thereunder. The tunnels are sealed by a dielectric material applied over the enclosure.