Shenjian J Liu from Honolulu, HI, age 60

Us Patents

Method For Selectively Etching An Aluminum Containing Layer
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US Patent:

7208420, Apr 24, 2007
Filed:

Jul 22, 2004
Appl. No.:

10/897880
Inventors:

Zhigang Mao - San Jose CA, US
Shenjian Liu - Fremont CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

H01L 21/461
H01L 21/302
US Classification:

438710, 438714, 438720
Abstract:

A method of forming conductive connections for semiconductor devices is provided. An organic low-k dielectric layer is formed over a wafer. A conductive aluminum containing layer is formed over the organic low-k dielectric layer. The wafer is placed in an etch chamber. An etch gas comprising HBr is provided into the etch chamber. A plasma is formed from the etch gas comprising HBr. The plasma from the etch gas comprising HBr is used to selectively etch the conductive aluminum containing layer with respect to the low-k dielectric layer.

Tungsten Silicide Etch Process With Reduced Etch Rate Micro-Loading
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US Patent:

7413992, Aug 19, 2008
Filed:

May 23, 2006
Appl. No.:

11/440163
Inventors:

Sok Kiow Tan - Newark CA, US
Shenjian Liu - Fremont CA, US
Harmeet Singh - Fremont CA, US
Sam Do Lee - Fremont CA, US
Linda Fung-Ming Lee - Redwood City CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

H01L 21/302
US Classification:

438706, 438659, 438714, 438719, 438738, 216 60, 216 79, 156345
Abstract:

The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing chamber, the substrate having a metal silicide layer formed thereon and a patterned mask defined over the metal silicide layer. The method also includes supplying an etching gas mixture of a fluorine-containing gas, a chlorine-containing gas, a nitrogen-containing gas, and an oxygen-containing gas to the plasma processing chamber, wherein the ratio of the nitrogen-containing gas to the fluorine-containing gas is between about 5 to about 15. In addition, the method includes generating a plasma in the plasma processing chamber using the supplied etching gas mixture to etch the metal silicide layer in regions not covered by the patterned mask, the patterned mask defining dense regions and isolated regions, wherein the generated plasma is configured to remove the metal silicide layer in the dense regions and the isolated regions at a reduced etch rate micro-loading.

Method For Reducing Microloading In Etching High Aspect Ratio Structures
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US Patent:

7629255, Dec 8, 2009
Filed:

Jun 4, 2007
Appl. No.:

11/757950
Inventors:

Qian Fu - Fremont CA, US
Shenjian Liu - Fremont CA, US
Wonchul Lee - Fremont CA, US
Bryan Pu - San Jose CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

H01L 21/44
US Classification:

438672, 438637, 438700, 438622, 438E21582
Abstract:

A method for etching features of different aspect ratios in a conductive layer is provided. The method comprises: depositing over the conductive layer with an aspect ratio dependent deposition; etching features into the conductive layer with an aspect ratio dependent etching of the conductive layer; and repeating the depositing and the etching at least once.

Phase Change Alloy Etch
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US Patent:

7682979, Mar 23, 2010
Filed:

Jun 29, 2006
Appl. No.:

11/479303
Inventors:

Qian Fu - Fremont CA, US
Shenjian Liu - Fremont CA, US
Linda Fung-Ming Lee - Fremont CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

H01L 21/3065
US Classification:

438710, 15634526, 257E21218
Abstract:

A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be heated by a current and then when cooled, either forms an amorphous material or a crystalline material, depending on how fast the material is cooled. In addition, the amorphous material has a resistance at least several times greater than the crystalline material.

Extending Lifetime Of Yttrium Oxide As A Plasma Chamber Material
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US Patent:

8097105, Jan 17, 2012
Filed:

Jan 11, 2007
Appl. No.:

11/652048
Inventors:

Hong Shih - Walnut CA, US
Duane Outka - Fremont CA, US
Shenjian Liu - Fremont CA, US
John Daugherty - Alameda CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

C03B 29/00
US Classification:

156 8911, 156 99
Abstract:

Two methods of extending the lifetime of yttrium oxide as a plasma chamber material are provided. One method comprises making a three-layer component of a plasma processing chamber by co-sintering a dual-layer green body where one layer comprises ceramic particles and a second layer comprises yttria particles. The two layers are in intimate contact during the sintering process. In a preferred embodiment, the three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. Optionally, the disks are pressed together during the sintering process. The resulting three-layer component is very low in porosity. Preferably, the porosity of any of the outer layer of yttria, the intermediate layer of YAG, and the second outer layer of alumina, is less than 3%. The second method comprises sealing an yttria plasma spray coated component by applying a liquid anaerobic sealant with a room temperature viscosity of less than 50 cP to the component by brushing the sealant on all yttria surfaces of the component, wet cleaning the component, curing the wet cleaned component for over 2 hours at a temperature of at least 150 C. in an N2 environment; and, applying a second sealant coat to the cured substrate by repeating the procedure used to apply the first coat.

Selective Etch Of High-K Dielectric Material
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US Patent:

8124538, Feb 28, 2012
Filed:

Apr 10, 2009
Appl. No.:

12/422108
Inventors:

In Deog Bae - Kyeonnggi, KR
Qian Fu - Fremont CA, US
Wonchul Lee - Fremont CA, US
Shenjian Liu - Fremont CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

H01L 21/302
US Classification:

438710, 438719
Abstract:

A method for selectively etching a high-k dielectric layer with respect to a polysilicon material is provided. The high-k dielectric layer is partially removed by Ar sputtering, and then the high-k dielectric layer is etched using an etching gas comprising BCl. The high-k dielectric layer and the polysilicon material may be formed on a substrate. In order to partially remove the high-k dielectric layer, a sputtering gas containing Ar is provided into an etch chamber in which the substrate is placed, a plasma is generated from the sputtering gas, and then the sputtering gas is stopped. In order to etch the high-k dielectric layer, the etching gas is provided into the etch chamber, a plasma is generated from the etching gas, and then the etching gas is stopped.

Method Of Controlling Etch Microloading For A Tungsten-Containing Layer
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US Patent:

8518282, Aug 27, 2013
Filed:

Nov 13, 2008
Appl. No.:

12/744012
Inventors:

Wonchul Lee - San Ramon CA, US
Qian Fu - Pleasanton CA, US
Shenjian Liu - San Ramon CA, US
Bryan Pu - San Jose CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

B44C 1/22
H01L 21/3065
US Classification:

216 37, 216 58, 216 67, 216 74, 216 75, 438685, 438695, 438706
Abstract:

A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.

Extending Lifetime Of Yttrium Oxide As A Plasma Chamber Material
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US Patent:

8585844, Nov 19, 2013
Filed:

Dec 13, 2011
Appl. No.:

13/324287
Inventors:

Hong Shih - Walnut CA, US
Duane Outka - Fremont CA, US
Shenjian Liu - Fremont CA, US
John Daugherty - Alameda CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

B32B 17/00
US Classification:

156 99, 156 8911, 118723 R
Abstract:

A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.