John M. Gibson - Upper Montclair NJ John C. Hensel - Summit NJ Anthony F. Levi - Summit NJ Raymond T. Tung - New Providence NJ
Assignee:
American Telephone & Telegraph Co., AT&T Bell Labs. - Murray Hill NJ
International Classification:
H01L 2948 H01L 2124
US Classification:
357 15
Abstract:
A method for producing, without etching, a perforated layer of epitaxial metal silicide, especially CoSi. sub. 2, on a single crystal Si substrate, with epitaxial Si overlying the silicide layer. The layer thickness, and the number and size of the openings in the layer are such as to make the structure suitable as an electronic device, in particular, as a permeable base transistor. The number and/or size of the openings is a function of processing parameters such as the substrate orientation, the annealing temperature of the film, or the Co/Si ratio of the deposited material. A device comprising a perforated silicide layer is also disclosed.
Heteroepitaxy Of Multiconstituent Material By Means Of A _Template Layer
John M. Gibson - Upper Montclair NJ John M. Poate - Summit NJ Raymond T. Tung - Berkeley Heights NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
C30B 2306
US Classification:
156603
Abstract:
The method for growing heteroepitaxial multiconstituent material on a substrate comprises deposition of a thin disordered layer of a "template-forming" material, i. e. , material containing at least one constituent of the multiconstituent material to be grown, and differing in chemical composition from at least the substrate material, on the substrate surface at a relatively low deposition temperature, raising the substrate temperature to an intermediate transformation temperature, thereby causing the template-forming material to undergo a reaction that results in formation of "template" material, typically material having substantially the same composition as the multiconstituent material to be grown. Onto the thus formed template layer is then deposited the material for the epitaxial multiconstituent layer. This general process is exemplified by the growth of NiSi. sub.
Method Of Producing A Silicide/Si Heteroepitaxial Structure, And Articles Produced By The Method
John C. Hensel - Summit NJ Anthony F. J. Levi - Summit NJ Raymond T. Tung - New Providence NJ
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 21203
US Classification:
437189
Abstract:
Described is a method for producing metal silicide/silicon heterostructures. The method comprises depositing a very thin Si "template" layer on a relatively cold (
Formation Of Heterostructures By Pulsed Melting Of Precursor Material
John M. Gibson - Upper Montclair NJ Dale C. Jacobson - Independence Township, Warren County NJ John M. Poate - Summit NJ Raymond T. Tung - Berkeley Heights NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
C30B 108
US Classification:
156617R
Abstract:
A method for forming heterostructures comprising multiconstituent epitaxial material, on a substrate comprises formation of a layer of "precursor" material on the substrate, and momentarily melting the precursor material by pulsed irradiation. The precursor material has the same major chemical constituents as the multiconstituent material to be formed, albeit not necessarily in the same proportions. In at least some systems (e. g. , nickel or cobalt silicides on Si), solid state annealing of the re-solidified material often improves substantially the quality of the epitaxial material formed, resulting in substantially defect-free, substantially monocrystalline, material. An exemplary application of the inventive method is the formation of single crystal epitaxial NiSi. sub. 2 on Si(100).
License Records
Raymond Tung
Address:
165 Park Row SUITE 11, New York, NY 10038
Name / Title
Company / Classification
Phones & Addresses
Raymond Tung
SMITH TERRACE CONDOMINIUM INC
Raymond Tung 209 Smith St, Brooklyn, NY 11201 209 Smith St #C-1, Brooklyn, NY 11201
Raymond Tung
GOLDEN 209 INC
265 Canal St / #306, New York, NY 10013 215 Park Row / #2G, New York, NY 10038
Raymond Tung
CANAL PLASTICS CENTER INC Ret Lumber/Building Materials Whol Plastic Materials/Shapes
345 Canal St, New York, NY 10013 212 925-1777, 212 925-1032, 212 431-5901
Raymond Tung
GOLDEN WELL TERRACE CONDOMINIUM, INC
209 Smith St #C-1, Brooklyn, NY 11201 20 P Smith St #C-1, Brooklyn, NY 11201 215 Park Row APT 2G, New York, NY 10038
Vsolvit Aug 2017 - Jun 2018
Junior Qc and Qa Analyst
Hedgeserv Aug 2017 - Jun 2018
Intern
Eberhart Brothers Inc. Nov 2016 - Aug 2017
Property Management Intern
J.p. Morgan Nov 2016 - Aug 2017
Analyst
Education:
Baruch College 2015 - 2019
Bachelors, Bachelor of Business Administration, Accounting
Franklin Delano Roosevelt High School Jun 2015
Franklin Delano Roosevelt High School 2011 - 2015
The City University of New York
Skills:
Microsoft Word Microsoft Office Microsoft Excel Microsoft Powerpoint Customer Service Management Leadership Research Public Speaking High Level of Accuracy Teamwork Project Management Mathematics Organization Skills Persuasion Auditing Internal Audit Accounting Data Entry It Audit Information Technology