Pei Lin Fang

US Patent:

6960739, Nov 1, 2005

Filed:

Mar 6, 2003

Appl. No.:

10/384439

Inventors:

Kuo-Ching Liu - Fremont CA, US
Pei Hsien Fang - Los Altos Hills CA, US
Dan Dere - Palo Alto CA, US
Jenn Liu - Fremont CA, US
Antonio Lucero - Fresno CA, US
Scott Pinkham - Bozeman MT, US
Steven Oltrogge - Belgrade MT, US
Duane Middlebusher - San Jose CA, US

Assignee:

New Wave Research - Fremont CA

International Classification:

B23K026/38

US Classification:

21912169

Abstract:

A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

US Patent:

20030226830, Dec 11, 2003

Filed:

Feb 11, 2003

Appl. No.:

10/364587

Inventors:

Kuo-Ching Liu - Fremont CA, US
Pei Fang - Los Altos Hills CA, US
Dan Dere - Palo Alto CA, US
Jenn Liu - Fremont CA, US
Antonio Lucero - Fresno CA, US
Scott Pinkham - Bozeman MT, US
Steven Oltrogge - Belgrade MT, US
Duane Middlebusher - San Jose CA, US

Assignee:

New Wave Research - Fremont CA

International Classification:

B23K026/38
B23K026/03
B23K026/14
B23K026/10

US Classification:

219/121680, 219/121830

Abstract:

A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

US Patent:

20050215078, Sep 29, 2005

Filed:

Apr 28, 2005

Appl. No.:

11/117052

Inventors:

Kuo-Ching Liu - Fremont CA, US
Pei Hsien Fang - Los Altos Hills CA, US
Dan Dere - Palo Alto CA, US
Jenn Liu - Fremont CA, US
Antonio Lucero - Fresno CA, US
Scott Pinkham - Bozeman MT, US
Steven Oltrogge - Belgrade MT, US
Duane Middlebusher - San Jose CA, US

Assignee:

New Wave Research - Fremont CA

International Classification:

H01L021/477
H01L021/324

US Classification:

438795000, 438106000

Abstract:

A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

US Patent:

20050279740, Dec 22, 2005

Filed:

Jul 28, 2005

Appl. No.:

11/191386

Inventors:

Kuo-Ching Liu - Fremont CA, US
Pei Hsien Fang - Los Altos Hills CA, US
Daniel Dere - Palo Alto CA, US
Jenn Liu - Fremont CA, US
Antonio Lucero - Fresno CA, US
Scott Pinkham - Bozeman MT, US
Steven Oltrogge - Belgrade MT, US
Duane Middlebusher - San Jose CA, US

Assignee:

New Wave Research - Fremont CA

International Classification:

B23K026/38

US Classification:

219121690, 219121720

Abstract:

A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid state laser and locating edges of the substrate. The cutting is stopped based on the edge location, to prevent impacting background elements. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire.

US Patent:

20070248126, Oct 25, 2007

Filed:

May 15, 2007

Appl. No.:

11/748600

Inventors:

Kuo-Ching Liu - Fremont CA, US
Pei Fang - Los Altos Hills CA, US
Dan Dere - Palo Alto CA, US
Jenn Liu - Fremont CA, US
Antonio Lucero - Fresno CA, US
Scott Pinkham - Bozeman MT, US
Steven Oltrogge - Belgrade MT, US
Duane Middlebusher - San Jose CA, US

Assignee:

New Wave Research - Fremont CA

International Classification:

H01S 3/10

US Classification:

372010000

Abstract:

A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.

US Patent:

6580054, Jun 17, 2003

Filed:

Jul 30, 2002

Appl. No.:

10/208484

Inventors:

Kuo-Ching Liu - Fremont CA
Pei Hsien Fang - Los Altos Hills CA
Dan Dere - Palo Alto CA
Jenn Liu - Fremont CA
Antonio Lucero - Fresno CA
Scott Pinkham - Bozeman MT
Steven Oltrogge - Belgrade MT
Duane Middlebusher - San Jose CA

Assignee:

New Wave Research - Fremont CA

International Classification:

B23K 2638

US Classification:

21912168

Abstract:

A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid-state laser. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire. Control of the system, such as by moving the stage with a stationary beam path for the pulses, causes the pulses to contact the sapphire substrate in a scribe pattern at a rate of motion causing overlap of successive pulses sufficient to cut scribe lines in the sapphire substrate.