Minyi Y Chen
age ~58
from Las Vegas, NV
- Also known as:
-
- Minyi C Chen
- Min Yi Chen
- Min Y Chen
- Chen Min Yi
- Minyi C Yang
- Mimyi Chen
- Min Yichen
- Yi Chen Minyi
Minyi Chen Phones & Addresses
- Las Vegas, NV
- Tyler, TX
- 6742 Mount Leneve Dr, San Jose, CA 95120 • 408 389-9291
- 3306 Cropley Ave, San Jose, CA 95132
- San Gabriel, CA
- San Francisco, CA
- Santa Clara, CA
Amazon
Parallel and Distributed Processing and Applications: Third International Symposium, ISPA 2005, Nanjing, China, November 2-5, 2005, Proceedings ... Computer Science and General Issues)
view sourceThis book constitutes the refereed proceedings of the Third International Symposium on Parallel and Distributed Processing and Applications, ISPA 2005, held in Nanjing, China in November 2005. The 90 revised full papers and 19 revised short papers presented together with 3 keynote speeches and 2 tut...
Binding
Paperback
Pages
1164
Publisher
Springer
ISBN #
3540297693
EAN Code
9783540297697
ISBN #
4
Resumes
Minyi Chen
view sourceUs Patents
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Nand Flash Memory With Wordline Voltage Compensation Using Compensated Temperature Coefficients
view source -
US Patent:20190221266, Jul 18, 2019
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Filed:Jan 15, 2018
-
Appl. No.:15/871133
-
Inventors:- Hongkong, CN
Minyi CHEN - San Jose CA, US -
Assignee:SHINE BRIGHT TECHNOLOGY LIMITED - Hongkong
-
International Classification:G11C 16/08
G11C 16/04 -
Abstract:The present application provides a NAND flash memory with wordline voltage compensate, including wordlines. Each wordline corresponds to a wordline voltage with a compensated temperature coefficient. The wordlines are divided into a plurality of groups, each group corresponds to a compensated temperature coefficient. Each wordline corresponds to a wordline address, and the groups of wordlines are divided by at least a border according to wordline addresses, or divided by zones having fixed number of wordlines.
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Nand Flash Memory And Method For Destroying Information From The Nand Flash Memory
view source -
US Patent:20190206496, Jul 4, 2019
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Filed:Dec 29, 2017
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Appl. No.:15/857643
-
Inventors:- Hongkong, CN
Minyi CHEN - San Jose CA, US -
Assignee:SHINE BRIGHT TECHNOLOGY LIMITED - Hongkong
-
International Classification:G11C 16/16
G11C 16/30 -
Abstract:The present application provides a NAND flash memory, comprising: a control unit, which includes a signal receiving unit, a voltage boosted circuit and a flash array; and a power source supplying power to the control unit; wherein when the voltage boosted circuit receives an erase signal from the signal receiving unit, the voltage boosted circuit exerts a device erase pulse whose magnitude is larger than an initial voltage to blocks of the flash array to permanently erase data in the blocks; the blocks include power-on read blocks. By removing data from at least power-on read blocks, the present invention discloses a scheme for permanently destroying the NAND flash memory.
Youtube
Mylife
James Chen Minyi
view sourceLocality:
East Bay, MI
Minyi Y Chen
view sourceLocality:
San Jose, CA
Minyi N Chen
view sourceLocality:
San Gabriel, CA
Minyi Chen
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Chen Minyi
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Minyi Chen
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Minyi Chen
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MinYi Chen
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Minyi Chen
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Minyi Chen
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Minyi Chen
view sourceGoogleplus
Minyi Chen
Minyi Chen
Minyi Chen
Minyi Chen
Minyi Chen
Education:
University of Illinois at Urbana-Champaign
Minyi Chen
News
Apple buyback burnishes earnings per share, may soothe critics
view source- "If you're a long-term investor in Apple, this is a reason to buy," said Minyi Chen, who manages the TrimTabs Float Shrink ETF , an actively managed exchange-traded fund that buys companies with shrinking floats and which added to the fund's position in Apple on Thursday.
- Date: Feb 08, 2014
- Category: Business
- Source: Google
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