Kungang Zhou

US Patent:

20100091149, Apr 15, 2010

Filed:

Oct 14, 2008

Appl. No.:

12/250780

Inventors:

Richard Weisfield - Los Altos CA, US
Kungang Zhou - San Jose CA, US
David Doan - San Jose CA, US

Assignee:

dpiX LLC - Palo Alto CA

International Classification:

H04N 5/335

US Classification:

348294, 348E05091

Abstract:

A method is provided for fabricating an image sensor array in a manner that reduces the potential for defects resulting from electrostatic discharge events during fabrication of the image sensor array. The method includes: forming at least one pixel over a substrate, the pixel including a switching transistor and a photo-sensitive cell; and forming a dielectric interlayer over the pixel. A key step in the method of the present invention is depositing a first conductive layer over the dielectric interlayer. After the first conductive layer is formed, the image sensor array is well protected from ESD events because the first conductive layer spreads out any charge induced by tribo-electric charging events that may occur during subsequent fabrication processing steps, thereby reducing the potential for localized damage to the switching transistors upon the occurrence of ESD events.

US Patent:

20200341156, Oct 29, 2020

Filed:

Apr 23, 2019

Appl. No.:

16/392376

Inventors:

- Salt Lake City UT, US
Kungang Zhou - Saratoga CA, US

Assignee:

Varex Imaging Corporation - Salt Lake City UT

International Classification:

G01T 1/24
H04N 5/32
H01L 27/146
H01L 29/786

Abstract:

Some embodiments include a system, comprising: first circuit including a transistor having an optically sensitive threshold voltage; a light source configured to illuminate the transistor; and a control circuit configured to activate the light source based on the threshold voltage. In some embodiments, a threshold voltage of the transistor may be stabilized.