Jong H Choi

US Patent:

7428242, Sep 23, 2008

Filed:

Aug 2, 2004

Appl. No.:

10/910240

Inventors:

James Larry Taylor - Epone, FR
Jong Kwan Choi - San Jose CA, US

Assignee:

Staccato Communications, Inc. - San Diego CA

International Classification:

H04L 12/66

US Classification:

370463, 370469

Abstract:

A split MAC layer system is disclosed. The split MAC layer system comprises an upper MAC portion wherein the upper MAC portion is dependent on a MAC protocol, a lower MAC portion wherein the lower MAC portion is independent of the MAC protocol, and wherein the upper MAC portion communicates information to the lower MAC portion using an information structure including an action pointer.

US Patent:

20130208603, Aug 15, 2013

Filed:

Feb 14, 2012

Appl. No.:

13/396577

Inventors:

Jong Kwan Choi - Santa Clara CA, US
Ram Asokan - Cary NC, US

International Classification:

H04W 24/00
H04L 5/14
H04W 72/04

US Classification:

370252

Abstract:

Methods, systems, and computer readable media for performing long term evolution (LTE) channel delineation are disclosed. According to one method, the method includes storing a plurality of channel delineation maps in memory. The method further includes receiving downlink data from an LTE radio link. The method also includes identifying one of the channel delineation maps using the received data. The method further includes performing channel delineation on the data using a preconfigured channel delineation map.

US Patent:

20190103278, Apr 4, 2019

Filed:

Nov 13, 2018

Appl. No.:

16/189429

Inventors:

- Santa Clara CA, US
- Oakland CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Ellie Y. YIEH - Sunnyvale CA, US
Jong CHOI - San Diego CA, US
Christopher AHLES - San Diego CA, US
Andrew KUMMEL - San Diego CA, US

International Classification:

H01L 21/285
H01L 21/311
H01L 21/324
C23C 16/42
C23C 16/455
C23C 16/46

Abstract:

Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoFprecursor and a SiHprecursor which is followed by an additional SiHoverdose exposure to selectively deposit a MoSimaterial comprising MoSion the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.

US Patent:

20180342395, Nov 29, 2018

Filed:

May 24, 2018

Appl. No.:

15/988820

Inventors:

- Santa Clara CA, US
- Oakland CA, US
Srinivas NEMANI - Sunnyvale CA, US
Ellie YIEH - Sunnyvale CA, US
Jong CHOI - San Diego CA, US
Christopher AHLES - San Diego CA, US
Andrew KUMMEL - San Diego CA, US

International Classification:

H01L 21/285
H01L 21/324

Abstract:

Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoFprecursor and a SiHprecursor which is followed by an additional SiHoverdose exposure to selectively deposit a MoSimaterial comprising MoSion the silicon containing surface of the substrate.

US Patent:

20150097107, Apr 9, 2015

Filed:

Mar 19, 2013

Appl. No.:

14/386003

Inventors:

- Hwaseong-si, Gyeonggi-do, KR
Bu Yeob Yoo - Hwaseong-si, KR
Jong Lip Choi - Fremont CA, US

International Classification:

H05G 2/00

US Classification:

2502081, 250504 R

Abstract:

Disclosed is an apparatus for generating EUV light by means of plasma, the apparatus comprising: a laser source for outputting laser; a tunable laser mirror (TLM) for reflecting laser beams from the laser source; a focusing mirror (FM) for focusing the laser beams reflected from the TLM; a gas cell for generating EUV light by forming a plasma from the laser beams and reaction gas, the laser being incident on the gas cell after being focused on the TM, and the reaction gas being supplied by a gas supply line for a plasma-induced path corresponding to a section on the gas cell in which the focal point of the incident laser occurs; and a vacuum chamber for accommodating the TLM, FM and the gas cell in a state of vacuum. The present invention having features as discussed has the benefit of allowing simple but effective generation of EUV light.