Jin Ming Liu

US Patent:

20180068929, Mar 8, 2018

Filed:

Nov 13, 2017

Appl. No.:

15/811198

Inventors:

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US

International Classification:

H01L 23/48
H01L 21/768
H01L 21/308
H01L 21/033
H01L 21/74
H01L 21/311

Abstract:

A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

US Patent:

20160035650, Feb 4, 2016

Filed:

Oct 15, 2015

Appl. No.:

14/884076

Inventors:

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Lei Zhuang - White Plains NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 23/48

Abstract:

A first photoresist layer is patterned with a first pattern that includes an opening in a region between areas of two adjacent via holes to be formed. The opening in the first photoresist is transferred into a template layer to form a line trench therein. The lateral dimension of the trench is reduced by depositing a contiguous spacer layer that does not fill the trench completely. An etch-resistant material layer is conformally deposited and fills the trench, and is subsequently recessed to form an etch-resistant material portion filling the trench. A second photoresist layer is applied and patterned with a second pattern, which includes an opening that includes areas of two via holes and an area therebetween. A composite pattern of an intersection of the second pattern and the complement of the pattern of the etch-resistant material portion is transferred through the template layer.

US Patent:

20150041809, Feb 12, 2015

Filed:

Oct 24, 2014

Appl. No.:

14/522626

Inventors:

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US

International Classification:

H01L 21/66
H01L 49/02
H01L 21/762

US Classification:

257 48, 438 18

Abstract:

A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.

US Patent:

20140145191, May 29, 2014

Filed:

Nov 28, 2012

Appl. No.:

13/686954

Inventors:

- Armonk NY, US
Jin Liu - Chappaqua NY, US
Brian W. Messenger - Newburgh NY, US
Oliver D. Patterson - Poughkeepsie NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 21/66

US Classification:

257 48, 438 18, 438386

Abstract:

A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure.