Jim C Tseng from Brownsville, TX, age 52

Resumes

Senior Technical Director Of Signal Integrity, Design Engineering

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Location:

5612 Walnut St, Dublin, CA 94568

Industry:

Semiconductors

Work:

Formfactor Inc.
Senior Technical Director of Signal Integrity, Design Engineering
Formfactor Inc. 2007 - 2010
Senior Manager of Electrical Design
Formfactor Inc. 2007 - 2010
Technical Director of Electrical Design
Formfactor Inc. 1997 - 2007
Electrical Design Engineer
Ravisent Technology 1995 - 1997
Electrical Design Engineer

Education:

University of Pennsylvania 1990 - 1995
Bachelors, Bachelor of Science, Electrical Engineering

Skills:

Analog
Signal Integrity
Pcb Design
Semiconductors
Simulations
Electronics
Pads
Mems
Electrical Engineering
Engineering Management
Mixed Signal
Semiconductor Industry
Allegro
Analog Circuit Design
Soc
Cadence
Testing
Product Development
Dft
Electronics Packaging
Ic
Agilent Ads
Technical Training
Test Equipment
Power Analysis
Failure Analysis
Ansys
Circuit Simulation
Parasitic Extraction
Allegro Skill Programming
Project Management
Q3D
Hfss
Wikimedia
Design For Manufacturing
Eda
Test Engineering
Analog Design
Ansoft Designer
Electromagnetic Compatibility

Interests:

Exercise
Sweepstakes
Home Improvement
Shooting
Reading
Sports
Home Decoration
Photograph
Cooking
Gardening
Cruises
Outdoors
Electronics
Music
Movies
Collecting
Kids
Travel
Investing
Traveling
Sports Memorabilia Collecting

Languages:

English
Mandarin

Jim Tseng

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Location:

Greater New York City Area

Industry:

Pharmaceuticals

None At Aqi

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Location:

Greater New York City Area

Industry:

Public Safety

O At Cbp

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Location:

Greater New York City Area

Industry:

Public Safety

Us Patents

Method Of Estimating Channel Bandwidth From A Time Domain Reflectometer (Tdr) Measurement Using Rise Time And Maximum Slope
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US Patent:

7525302, Apr 28, 2009
Filed:

Jan 31, 2005
Appl. No.:

11/048383
Inventors:

Charles A. Miller - Fremont CA, US
Jim Chih-Chiang Tseng - Dublin CA, US
Assignee:

FormFactor, Inc. - Livermore CA
International Classification:

G01R 27/04
US Classification:

3241581
Abstract:

Bandwidth of a test channel is determined from a single port Time Domain Reflectometer (TDR) measurement with the channel terminated in a short or an open circuit. Bandwidth is estimated by: (1) making a TDR measurement of a channel terminated in a short or open circuit; (2) determining a maximum slope of the reflection from the TDR measurement; (3) calculating an interpolated rise or fall time, for example by taking 80% of the applied voltage between the 10% and 90% points, and then dividing the applied voltage by the maximum slope determined; (4) dividing the overall interpolated rise time by the square root of two to account for the TDR signal proceeding through the channel twice; (5) removing the contribution of rise time from measurement equipment; and (6) completing calculation of channel bandwidth using a formula to relate bandwidth to rise time, such as: bandwidth=0. 35/rise time.

Method Of Estimating Channel Bandwidth From A Time Domain Reflectometer (Tdr) Measurement
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US Patent:

20090212790, Aug 27, 2009
Filed:

Apr 28, 2009
Appl. No.:

12/431037
Inventors:

Charles A. Miller - Fremont CA, US
Jim Chih-Chiang Tseng - Dublin CA, US
International Classification:

G01R 27/06
US Classification:

324642
Abstract:

Bandwidth of a test channel is determined from a single port Time Domain Reflectometer (TDR) measurement with the channel terminated in a short or an open circuit. Bandwidth is estimated by: (1) making a TDR measurement of a channel terminated in a short or open circuit; (2) determining a maximum slope of the reflection from the TDR measurement; (2) calculating an interpolated rise or fall time, for example by taking 80% of the applied voltage between the 10% and 90% points, and then dividing the applied voltage by the maximum slope determined; (3) dividing the overall interpolated rise time by the square root of two to account for the TDR signal proceeding through the channel twice; (4) removing the contribution of rise time from measurement equipment; and (5) completing calculation of channel bandwidth using a formula to relate bandwidth to rise time, such as: bandwidth=0.35/rise time.

Method Of Manufacturing A Probe Card
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US Patent:

7196531, Mar 27, 2007
Filed:

Mar 4, 2005
Appl. No.:

11/073187
Inventors:

Gary W. Grube - Pleasanton CA, US
Igor Y. Khandros - Orinda CA, US
Benjamin N. Eldridge - Danville CA, US
Gaetan L. Mathieu - Livermore CA, US
Poya Lotfizadeh - San Francisco CA, US
Jim Chih-Chiang Tseng - Dublin CA, US
Assignee:

FormFactor, Inc. - Livermore CA
International Classification:

G01R 31/02
G01R 31/26
G06F 17/50
US Classification:

324754, 716 10, 716 15, 438 14
Abstract:

A method of designing and manufacturing a probe card assembly includes prefabricating one or more elements of the probe card assembly to one or more predefined designs. Thereafter, design data regarding a newly designed semiconductor device is received along with data describing the tester and testing algorithms to be used to test the semiconductor device. Using the received data, one or more of the prefabricated elements is selected. Again using the received data, one or more of the selected prefabricated elements is customized. The probe card assembly is then built using the selected and customized elements.