Danny Y Ma

US Patent:

46724206, Jun 9, 1987

Filed:

Apr 12, 1985

Appl. No.:

6/722957

Inventors:

Yan Borodovsky - Fremont CA
Mammen Thomas - San Jose CA
Danny Ma - San Jose CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 2314
H01L 2354

US Classification:

357 71

Abstract:

An improved integrated circuit structure, and method of making the structure, is disclosed wherein at least one metallization layer is coated during production of the structure with a conductive layer capable of withstanding metal removal means, and an upper metallization layer is subsequently applied to the structure. At least a portion of the subsequent metallization layer is in ohmic contact with the conductive layer and the lower metallization layer is protected by the intervening conductive layer during subsequent removal of the upper metallization layer if subsequent reworking of the structure becomes necessary. In a preferred embodiment, the use of the conductive layer over a metallization layer further enhances the construction process during patterning of a photoresist applied over the conductive layer by the use of a conductive material having antireflective properties.