Paul B Riley

Author:

Paul Riley

ISBN #:

0130110019

Author:

Paul Riley

ISBN #:

0130167320

Author:

Paul Riley

ISBN #:

0130801836

Author:

Paul Riley

ISBN #:

0130842648

Author:

Paul Riley

ISBN #:

0130932973

Author:

Paul Riley

ISBN #:

0131090534

Author:

Paul Riley

ISBN #:

0131410822

Author:

Paul Riley

ISBN #:

0131475096

US Patent:

20130204906, Aug 8, 2013

Filed:

Jul 18, 2012

Appl. No.:

13/552518

Inventors:

JOHN DAO-MING KO - Livermore CA, US
MICHAEL F. BRUNO - Woburn MA, US
PAUL ALAN RILEY - Ashburn VA, US

Assignee:

salesforce.com,inc. - San Francisco CA

International Classification:

G06F 17/30

US Classification:

707803, 707E17005

Abstract:

In accordance with embodiments, there are provided mechanisms and methods for facilitating dynamic management of assets in an on-demand services environment. In one embodiment and by way of example, a method includes receiving, in real-time, a request for performance of one or more tasks relating to management of assets. The management of assets may include management of data relating to the assets, where the assets may include hardware assets or software assets, wherein the request is received at a first computing system. The method may further include performing, in real-time, the one or more tasks. The one or more tasks may include dynamically customizing, according to the request, data relating to the assets.

US Patent:

46768688, Jun 30, 1987

Filed:

Apr 23, 1986

Appl. No.:

6/855207

Inventors:

Paul E. Riley - San Jose CA
Alan B. Ray - Palo Alto CA
Paul Bayer - San Jose CA

Assignee:

Fairchild Semiconductor Corporation - Cupertino CA

International Classification:

B44C 122
B29C 3700
C03C 1500
C03C 2506

US Classification:

156643

Abstract:

A method for planarizing an insulating layer overlying an irregular topographic substrate, e. g. , a conductive layer, is planarized by use of a sacrificial planarization layer. The planarization layer is removed using an oxygen-containing plasma generated in a parallel electrode reactor operating at a low excitation frequency and high pressure. Once the interface between the planarization layer and the conductive layer is reached, a second plasma with a reduced oxygen content is employed to avoid overetching the planarization layer. It has been observed that oxidizing species liberated during the etching of the insulating layer, typically silicon dioxide, contribute to the oxidation and hence removal of the planarization layer. The process may be monitored by observing the spectral emissions from species generated or consumed during planarization or by changes in the optical interference pattern, allowing termination of the etch at the proper time to avoid over-etching and under-etching of the insulating layer.