Michael R Hontz

US Patent:

20230030549, Feb 2, 2023

Filed:

Jul 28, 2022

Appl. No.:

17/876163

Inventors:

- Arlington VA, US
Mona A. Ebrish - Alexandria VA, US
Andrew D. Koehler - Alexandria VA, US
Alan G. Jacobs - Rockville MD, US
Matthew A. Porter - Virginia Beach VA, US
Karl D. Hobart - Alexandria VA, US
Prakash Pandey - Toledo OH, US
Tolen Michael Nelson - Tecumseh MI, US
Daniel G. Georgiev - Canton MI, US
Raghav Khanna - Toledo OH, US
Michael Robert Hontz - Drexel Hill PA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 29/06
H01L 29/20
H01L 29/861

Abstract:

A hybrid edge termination structure and method of forming the same. The hybrid edge termination structure in accordance with the invention is based on a junction termination extension (JTE) architecture, but includes an additional Layer of guard ring (GR) structures to further implement the implantation of dopants into the structure. The hybrid edge termination structure of the invention has a three-Layer structure, with a top Layer and a bottom Layer each having a constant dopant concentration in the lateral direction, and a middle Layer consisting of a plurality of spatially defined alternating regions that exhibit the electrical properties of either the top or bottom layer. By including the second layer, a discretized varying charge profile can be obtained that approximates the varying charge profile obtained using tapered edge termination but with easier manufacturing and lower cost.