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Jacob C Bortscheller

age ~76

from Clifton Park, NY

Also known as:
  • Jacob Charles Bortscheller
  • Jacob L Bortscheller
  • Jake Bortscheller
Phone and address:
10 Dorsman Dr, Clifton Park Center, NY 12065
518 371-6455

Jacob Bortscheller Phones & Addresses

  • 10 Dorsman Dr, Clifton Park, NY 12065 • 518 371-6455
  • Ballston Spa, NY
  • Schoharie, NY
  • 10 Dorsman Dr, Clifton Park, NY 12065 • 716 816-6379

Work

  • Position:
    Sales Occupations

Education

  • Degree:
    Graduate or professional degree

Us Patents

  • Phosphor Coating With Self-Adjusting Distance From Led Chip

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  • US Patent:
    6635363, Oct 21, 2003
  • Filed:
    Aug 21, 2000
  • Appl. No.:
    09/642901
  • Inventors:
    Steven Jude Duclos - Clifton Park NY
    Jon Jansma - Pepper Pike OH
    Jacob C. Bortscheller - Clifton Park NY
    Robert J. Wojnarowski - Ballston Lake NY
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01L 3300
  • US Classification:
    428690, 428917, 428161, 313512, 313112, 257 95, 257 98, 257100
  • Abstract:
    A light source ( ) includes a light emitting component ( ), such as a UV/blue light emitting diode or laser diode. A layer ( ) of a phosphor material is spaced from the light emitting component by a layer ( ) of a material which is transmissive to the light emitted by the light emitting component. The phosphor material converts a portion of the light emitted by the light emitting component to light of a longer wavelength such as yellow light. In a preferred embodiment, the light transmissive layer valise in thickness over the light emitting component so that the phosphor is spaced further from the diode in regions where the emission is higher. This increases the Surface area of the phosphor in these regions and minimizes the effects of overheating and saturation on the phosphor emission.
  • Led Cross-Linkable Phospor Coating

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  • US Patent:
    6747406, Jun 8, 2004
  • Filed:
    Aug 7, 2000
  • Appl. No.:
    09/633527
  • Inventors:
    Jacob C. Bortscheller - Clifton Park NY
    Robert J. Wojnarowski - Ballston Lake NY
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01J 6304
  • US Classification:
    313512, 313501, 313502, 313498, 257 94, 257 96, 257 97, 257 98, 257 99
  • Abstract:
    A light source ( ) includes a light emitting component ( ), such as a UV/blue light emitting diode or laser diode coated with a layer ( ) of a phosphor material ( ). The phosphor material converts a portion of the light emitted by the light emitting component to light of a longer wavelength, such as yellow light. The thickness d of the layer varies across the light emitting component in relation to the intensity of light emitted by the light emitting component. This maintains a uniform color of the emission from the light source while minimizing the loss in light intensity (brightness) due to the presence of the phosphor.
  • Led Cross-Linkable Phosphor Coating

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  • US Patent:
    6890234, May 10, 2005
  • Filed:
    May 3, 2004
  • Appl. No.:
    10/837735
  • Inventors:
    Jacob C. Bortscheller - Clifton Park NY, US
    Robert J. Wojnarowski - Ballston Lake NY, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01J063/04
    H01L033/00
  • US Classification:
    445 25, 445 24, 313511, 313512
  • Abstract:
    A light source () includes a light emitting component (), such as a UV/blue light emitting diode or laser diode coated with a layer () of a phosphor material (). The phosphor material converts a portion of the light emitted by the light emitting component to light of a longer wavelength, such as yellow light. The thickness d of the layer varies across the light emitting component in relation to the intensity of light emitted by the light emitting component. This maintains a uniform color of the emission from the light source while minimizing the loss in light intensity (brightness) due to the presence of the phosphor.
  • Oled Area Illumination Source

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  • US Patent:
    7348738, Mar 25, 2008
  • Filed:
    Sep 2, 2004
  • Appl. No.:
    10/934015
  • Inventors:
    Donald Franklin Foust - Scotia NY, US
    Anil Raj Duggal - Niskayuna NY, US
    Joseph John Shiang - Niskayuna NY, US
    William Francis Nealon - Gloversville NY, US
    Jacob Charles Bortscheller - Clifton Park NY, US
  • Assignee:
    General Electric Company - Niskayuna NY
  • International Classification:
    H05B 37/00
    F21V 11/00
    F21V 15/00
    G09G 5/00
  • US Classification:
    315312, 362367, 362368, 345 13
  • Abstract:
    The present invention relates to an area illumination light source comprising a plurality of individual OLED panels. The individual OLED panels are configured in a physically modular fashion. Each OLED panel comprising a plurality of OLED devices. Each OLED panel comprises a first electrode and a second electrode such that the power being supplied to each individual OLED panel may be varied independently. A power supply unit capable of delivering varying levels of voltage simultaneously to the first and second electrodes of each of the individual OLED panels is also provided. The area illumination light source also comprises a mount within which the OLED panels are arrayed.
  • Color Tunable Illumination Source And Method For Controlled Illumination

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  • US Patent:
    7498603, Mar 3, 2009
  • Filed:
    Dec 6, 2006
  • Appl. No.:
    11/567478
  • Inventors:
    Michael Scott Herzog - Voorheesville NY, US
    Anil Raj Duggal - Niskayuna NY, US
    Jacob Charles Bortscheller - Clifton Park NY, US
    Tami Janene Faircloth - Santa Barbara CA, US
  • Assignee:
    General Electric Company - Niskayuna NY
  • International Classification:
    H01L 35/24
  • US Classification:
    257 40, 257E51001, 438 99
  • Abstract:
    An illumination source including a first OLED layer capable of emitting light of a first color, a second OLED layer capable of emitting light of a second color and disposed on the first OLED layer, each of said first, second OLED layers including alternating active light-emitting areas and inactive non-light emitting areas; said first OLED layer comprising a first substrate, a first transparent electrode layer disposed on the substrate, a first electroluminescent layer capable of emitting light of the first color disposed on the first transparent electrode layer, and a first patterned metallized electrode layer forming the alternating active light-emitting areas and inactive non-light emitting areas; and said second OLED layer comprising a second substrate, a second transparent electrode layer disposed on the substrate, a second electroluminescent layer capable of emitting light of the second color disposed on the second transparent electrode layer, and a second patterned metallized electrode layer forming the alternating active light-emitting areas and inactive non-light emitting areas; wherein light emitted by the active light-emitting areas of the first OLED layer is transmitted through the inactive non-light emitting areas of the second OLED layer. A method for tuning color and/or intensity of the light output of an illumination source is also disclosed.
  • Color Tunable Oled Illumination Display And Method For Controlled Display Illumination

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  • US Patent:
    20080137008, Jun 12, 2008
  • Filed:
    Dec 6, 2006
  • Appl. No.:
    11/567475
  • Inventors:
    Mark Marshall Meyers - Mechanicville NY, US
    Anil Raj Duggal - Niskayuna NY, US
    Gustino Joseph Lanese - Chesterland OH, US
    Jacob Charles Bortscheller - Clifton Park NY, US
    Michael Scott Herzog - Voorheesville NY, US
    Tami Janene Faircloth - Santa Barbara CA, US
  • Assignee:
    GENERAL ELECTRIC COMPANY - Schenectady NY
  • International Classification:
    G02F 1/1335
    H01L 51/54
  • US Classification:
    349 69, 313504
  • Abstract:
    A color display device is disclosed. The display includes a light modulating element and a color tunable OLED illumination source configured to illuminate the light modulating element, the illumination source comprising a plurality of OLED layers fabricated on different substrates and assembled in a stacked configuration, wherein each of the plurality of OLED layers comprises active light-emitting areas, alternating with inactive non-light emitting areas configured to transmit light emitted by underlying OLED layers. A method of illuminating a backlit display is also disclosed.
  • Self Aligning Inter-Scintillator Reflector X-Ray Damage Shield And Method Of Manufacture

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  • US Patent:
    62981137, Oct 2, 2001
  • Filed:
    Feb 7, 2000
  • Appl. No.:
    9/499323
  • Inventors:
    Steven Jude Duclos - Clifton Park NY
    Jacob Charles Bortscheller - Clifton Park NY
    George William Taylor - Oak Creek WI
    Christopher Jay Morse - Mukwonago WI
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    G01T 120
  • US Classification:
    378 19
  • Abstract:
    A scintillator pack including an x-ray damage shield. The scintillator pack has an array of scintillator pixels. A scintillation light reflecting layer that reflects scintillation light from the pixels is included at least between the scintillator pixels in inter-scintillator regions. An x-ray absorbing layer acts as the x-ray damage shield to protect the portions of the scintillation light reflecting layer from x-rays. The x-ray absorbing layer is formed selectively and in a self aligned manner in regions over the inter-scintillator regions.
  • Thin Film Field-Effect Transistors With Tolerance To Electrode Misalignment

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  • US Patent:
    45970017, Jun 24, 1986
  • Filed:
    Oct 5, 1984
  • Appl. No.:
    6/657857
  • Inventors:
    Jacob C. Bortscheller - Ballston Spa NY
    Jack D. Kingsley - Schenectady NY
    William W. Piper - Scotia NY
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    H01L 2978
  • US Classification:
    357 237
  • Abstract:
    In a thin film field-effect transistor, source and drain electrodes each include at least one, respective, narrowed, elongated portion. These elongated source and drain portions are oriented in parallel and in adjacent relation to each other, and a respective, complete longitudinal section of each elongated portion overlays a gate electrode. The resulting FET may be fabricated with readily-achievable photolithographic alignment precision as between the source and drain electrode configuration and the gate electrode, and achieves acceptably low source-to-gate and drain-to-gate parasitic capacitances.

Youtube

JACOB LASHER - THE LOST LIBRARY BOOK TALK

My recent visit at Keaton & Lloyd Bookshop in Rome, New York! I talk a...

  • Duration:
    31m 57s

The Jacob & Co. Bucherer Blue Epic X

Jacob & Co teamed up with Bucherer Blue to create 18 pieces to celebra...

  • Duration:
    45s

Jacob Koller - 3 Variations on Silent Night -...

Credits: Silent Night - Written by Franz Xaver Gruber Played and arran...

  • Duration:
    3m 33s

Jacob & Co Astronomia Tourbillon Bucherer Blu...

Jacob & Co., Bucherer BLUE, and Sotheby's, are reaching for the stars....

  • Duration:
    35s

Silent Night by Jacob

Silent Night performed by Jacob Recorded at Sonata Piano Studio Christ...

  • Duration:
    54s

Weston starts to learn how to crawl

  • Duration:
    1m 35s

Mylife

Jacob Bortscheller Photo 1

George Bortscheller Larg...

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Helen Bortscheller Irene Bortscheller Jacob Bortscheller Jake Bortscheller James Bortscheller

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