Yu U Zeng

US Patent:

20140054755, Feb 27, 2014

Filed:

Aug 21, 2012

Appl. No.:

13/590928

Inventors:

Xinyu Zhang - Bristow VA, US
Soichi Sugiura - Bristow VA, US
Yu Zeng - Woodbridge VA, US

Assignee:

MICRON TECHNOLOGY, INC. - Boise ID

International Classification:

H01L 21/31
H01L 21/3065
H01L 29/02

US Classification:

257635, 438761, 438710, 257629, 257E29002, 257E2124, 257E21218

Abstract:

A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described. Semiconductor device structures are also described.

US Patent:

20160035681, Feb 4, 2016

Filed:

Oct 9, 2015

Appl. No.:

14/879363

Inventors:

- Boise ID, US
Soichi Sugiura - Bristow VA, US
Yu Zeng - Clarksville MD, US

International Classification:

H01L 23/552
H01L 23/532

Abstract:

A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described. Semiconductor device structures are also described.