Yu Wang

US Patent:

8374134, Feb 12, 2013

Filed:

Aug 26, 2009

Appl. No.:

12/547834

Inventors:

Yu Albert Wang - Cerritos CA, US
Vijayalakshmi R. Raveendran - San Diego CA, US

Assignee:

QUALCOMM Incorporated - San Diego CA

International Classification:

H04Q 7/00

US Classification:

370329, 370466

Abstract:

In general, this disclosure relates to techniques for transmitting data for applications using one or more available channels of a spectrum. One example method comprises transforming data into a digital broadcast format, identifying at least one available channel of a spectrum, and transmitting the transformed data in the at least one identified available channel.

US Patent:

20100157117, Jun 24, 2010

Filed:

Nov 3, 2009

Appl. No.:

12/611200

Inventors:

Yu Wang - McKinney TX, US

International Classification:

H04N 5/335

US Classification:

348276, 348E05091

Abstract:

A vertically stacked image sensor includes two or more image sensors aligned vertically one on top of the other. One or more cutoff color filters is positioned between each image sensor. The first image sensor in the stack receives light from a subject scene and each inferior image sensor receives the light that passes through each previous cutoff color filter.

US Patent:

20190064354, Feb 28, 2019

Filed:

Feb 9, 2017

Appl. No.:

16/079990

Inventors:

- Unterpremstaetten, AT
Yu WANG - Plano TX, US

International Classification:

G01S 17/02
G01S 7/481

Abstract:

An optical sensor arrangement comprises an optoelectronic device covered by a cover arrangement and being configured to emit or detect at least electromagnetic radiation with a first wavelength through an aperture of the cover arrangement. The optical sensor arrangement further comprises a mirror arrangement arranged between the optoelectronic device and the aperture and comprising a wavelength selective mirror with a passband and a stopband. The passband includes a first wavelength range including the first wavelength, the stopband includes a second wavelength range corresponding to visible light or vice versa.

US Patent:

20180224546, Aug 9, 2018

Filed:

May 10, 2016

Appl. No.:

15/579914

Inventors:

- Unterpremstaetten, AT
Yu WANG - Plano TX, US

Assignee:

ams AG - Unterpremstaetten

International Classification:

G01S 17/02
G01J 1/02
G01S 7/481
G01V 8/14
G06F 3/01
G06F 3/03
H03K 17/94

Abstract:

An optical sensor arrangement comprises an emitting device (E) and a detection device (D) configured to emit and detect, respectively, electromagnetic radiation and a cover (C) arranged to cover the emitting and the detection device (E, D). The sensor arrangement comprises a first cover layer (C) partially covering an inner surface of the cover (C) and having a first and a second opening located above the emitting and the detection device (E, D), respectively. The sensor arrangement comprises a second and a third cover layer (C, C) covering the inner surface at areas of the first and the second opening. A reflection and/or an absorption characteristics of at least one of the second and third cover layer (C, C) is adapted to a reflection and/or an absorption characteristics of the first cover layer (C) for incident light within the specified spectrum.

US Patent:

20150232376, Aug 20, 2015

Filed:

May 1, 2015

Appl. No.:

14/702284

Inventors:

- San Jose CA, US
Brent Boyce - Novi MI, US
Guowen Ding - San Jose CA, US
Muhammad Imran - Brownstown MI, US
Minh Huu Le - San Jose CA, US
Yu Wang - San Jose CA, US
Yongli Xu - Plymouth MI, US

International Classification:

C03C 17/23

Abstract:

A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).

US Patent:

20150191815, Jul 9, 2015

Filed:

Mar 18, 2015

Appl. No.:

14/661958

Inventors:

- San Jose CA, US
Brent Boyce - Novi MI, US
Jeremy Cheng - Cupertino CA, US
Muhammad Imran - Brownstown MI, US
Jingyu Lao - Saline MI, US
Minh Huu Le - San Jose CA, US
Daniel Schweigert - Fremont CA, US
Yu Wang - San Jose CA, US
Yongli Xu - Plymouth MI, US
Guizhen Zhang - Santa Clara CA, US

International Classification:

C23C 14/08

Abstract:

A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include a ternary alloy of nickel, titanium, and niobium, which showed improvements in overall performance than those from binary barrier results. The percentage of nickel can be between 5 and 15 wt %. The percentage of titanium can be between 30 and 50 wt %. The percentage of niobium can be between 40 and 60 wt %.

US Patent:

20140308528, Oct 16, 2014

Filed:

Dec 31, 2013

Appl. No.:

14/144828

Inventors:

- San Jose CA, US
Brent Boyce - Novi MI, US
Jeremy Cheng - Cupertino CA, US
Jose Ferreira - Rumelange, DE
Muhammad Imran - Brownstown MI, US
Minh Huu Le - San Jose CA, US
Daniel Schweigert - Fremont CA, US
Yu Wang - San Jose CA, US
Yongli Xu - Plymouth MI, US
Guizhen Zhang - Santa Clara CA, US

Assignee:

Intermolecular Inc. - San Jose CA

International Classification:

C23C 14/10
C03C 17/34
C23C 14/34

US Classification:

428426, 20419227

Abstract:

Disclosed herein are systems, methods, and apparatus for forming a low emissivity panel. In various embodiments, a partially fabricated panel may be provided. The partially fabricated panel may include a substrate, a reflective layer formed over the substrate, and a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the substrate and the top dielectric layer. The top dielectric layer may include tin having an oxidation state of +4. An interface layer may be formed over the top dielectric layer. A top diffusion layer may be formed over the interface layer. The top diffusion layer may be formed in a nitrogen plasma environment. The interface layer may substantially prevent nitrogen from the nitrogen plasma environment from reaching the top dielectric layer and changing the oxidation state of tin included in the top dielectric layer.

US Patent:

20140272335, Sep 18, 2014

Filed:

Mar 12, 2013

Appl. No.:

13/797412

Inventors:

INTERMOLECULAR INC. - , US
Brent Boyce - Novi MI, US
Guowen Ding - San Jose CA, US
Muhammad Imran - Brownstown MI, US
Minh Huu Le - San Jose CA, US
Yu Wang - San Jose CA, US
Yongli Xu - Plymouth MI, US

Assignee:

INTERMOLECULAR INC. - San Jose CA

International Classification:

G02B 5/20
C30B 25/00
C03C 17/06
C30B 23/00
C03C 17/23

US Classification:

428203, 117106, 428336, 428216, 117 95

Abstract:

A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).

Author:

Yu San Wang

ISBN #:

0275900460

Author:

Yu S. Wang

ISBN #:

0275934713

Author:

Yu Michael Wang

ISBN #:

0791835138