Steven Aihua Chen - Fremont CA Henry Ho - San Jose CA Michael X. Yang - Fremont CA Bruce W. Peuse - San Carlos CA Karl Littau - Palo Alto CA Yu Chang - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05B 368
US Classification:
2194441, 118725
Abstract:
A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.
Semiconductor Substrate Processing Chamber Having Interchangeable Lids Actuating Plural Gas Interlock Levels
Yu Chang - San Jose CA Wen Xiao Chen - Roseville CA
Assignee:
Applied Materials, Inc, - Santa Clara CA
International Classification:
C23C 16000
US Classification:
118715, 118707, 118733, 42725528
Abstract:
Multiple levels of interlocks are provided relative to gas flow for a chemical vapor deposition chamber. When a chamber lid used for normal processing is in place, no interlock is in effect. When a lid used during maintenance operations is in place, flow of toxic gas to the chamber is interlocked, but flow of purge gas is permitted. When no lid is in place, all gas flow to the chamber is interlocked. The interlock arrangement may be implemented with two switches, both of which are actuated when the lid for normal processing is in place, and only one of which is actuated by the lid for the maintenance process.
Wiring Arrangement Ensuring All-Or-None Operation Of A Series Of Modular Load Elements
Fong M. Chang - Los Gatos CA Yu Chang - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05K 702
US Classification:
361760, 361775, 361823, 361828, 307 12, 307 29
Abstract:
All-or-none operation of a series of modular load elements is ensured by routing high and low voltage lines from a power source through opposite nodes positioned at either end of the series of load elements. This arrangement prevents activation of only a portion of the load elements where electrical connection between them is not successfully established.
Steven Aihua Chen - Fremont CA Henry Ho - San Jose CA Michael X. Yang - Fremont CA Bruce W. Peuse - San Carlos CA Karl Littau - Palo Alto CA Yu Chang - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05B 368
US Classification:
2194441, 118725
Abstract:
A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.
Valve Control System For Atomic Layer Deposition Chamber
Siqing Lu - San Jose CA Yu Chang - San Jose CA Dongxi Sun - Cupertino CA Vinh Dang - San Jose CA Michael X. Yang - Palo Alto CA Anzhong Chang - San Jose CA Anh N. Nguyen - Milpitas CA Ming Xi - Milpitas CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01N 3508
US Classification:
436 55
Abstract:
A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.
Chris H. Carroll - Santa Clara CA, US Shiming Wang - Fremont CA, US Yu Chung Chang - Cupertino CA, US Joseph Indhiran Vanniasinkam - Toronto, CA
Assignee:
Opnext, Inc. - Fremont CA
International Classification:
H01S 3/04
US Classification:
372 36, 372 34
Abstract:
An optical assembly that can be utilized as a transmitter in a high data rate optical transceiver system is presented. The optical assembly allows a laser driver to be mounted near the laser and allows the laser driver and the laser to utilize a common heat sink. Further, assembly can be performed reliably and quickly to reduce the cost of production of the optical assembly.
Method And Apparatus For Dynamically Measuring The Thickness Of An Object
Lawrence C. Lei - Milpitas CA, US Siqing Lu - San Jose CA, US Yu Chang - San Jose CA, US Cecilia Martner - Los Gatos CA, US Quyen Pham - Sunnyvale CA, US Yu Ping Gu - Sunnyvale CA, US Joel Huston - San Jose CA, US Paul Smith - Campbell CA, US Gabriel Lorimer Miller - Eastham MA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G01B 7/06 G01N 27/72
US Classification:
324230, 324226
Abstract:
A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.
Valve Control System For Atomic Layer Deposition Chamber
Siqing Lu - San Jose CA, US Yu Chang - San Jose CA, US Dongxi Sun - Cupertino CA, US Vinh Dang - San Jose CA, US Michael X. Yang - Palo Alto CA, US Anzhong (Andrew) Chang - San Jose CA, US Anh N. Nguyen - Milpitas CA, US Ming Xi - Milpitas CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B05C 11/00
US Classification:
118710
Abstract:
A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.