Ying Ying Hui

US Patent:

20050205414, Sep 22, 2005

Filed:

May 16, 2005

Appl. No.:

11/130493

Inventors:

Kenny Ngan - Fremont CA, US
Ying Hui - Fremont CA, US
Seshadri Ramaswami - San Jose CA, US

International Classification:

C23C014/00
C23C014/32
C25B011/00
C25B009/00
H01L021/4763
C25B013/00

US Classification:

204192150, 204298250

Abstract:

Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma. Consequently, it has been found that good sidewall coverage is achieved in the latter part of the deposition.

US Patent:

6899799, May 31, 2005

Filed:

Oct 2, 2002

Appl. No.:

10/263167

Inventors:

Kenny King-Tai Ngan - Fremont CA, US
Ying Yin Hui - Fremont CA, US
Seshadri Ramaswami - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C014/35

US Classification:

20429825, 20429803, 20429806

Abstract:

Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma. Consequently, it has been found that good sidewall coverage is achieved in the latter part of the deposition.