Yaoling Pan from 47 Wendover Rd, East Windsor, NJ 08520, Phone: 609 918-1889

Us Patents

Efficient Thermal Activation Optical Switch And Method Of Making The Same
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US Patent:

6678435, Jan 13, 2004
Filed:

May 18, 2001
Appl. No.:

09/861120
Inventors:

Yaoling Pan - Sunnyvale CA
Michele Palmieri - Agrate Brianza, IT
Richard E. Haven - Sunnyvale CA
Assignee:

Agilent Technologies, Inc. - Palo Alto CA
ST Microelectronics, Inc. - Carrollton TX
International Classification:

G02B 626
US Classification:

385 16
Abstract:

An optical switch having an insulator under a heater element is disclosed. The insulator reduces the heat loss thereby making the switch more efficient. The insulator is fabricated embedded in the underlying substrate on which the heater and the optical intersection are fabricated. A method of fabricating the optical switch having an insulator is disclosed. A trench is etched on the substrate and filled with oxide or other suitable insulating material. Then, the heater and the optical intersection are fabricated above the insulator.

System And Process For Producing Nanowire Composites And Electronic Substrates Therefrom
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US Patent:

7091120, Aug 15, 2006
Filed:

Aug 4, 2004
Appl. No.:

10/910800
Inventors:

Mihai Buretea - San Francisco CA, US
Jian Chen - Mountain View CA, US
Calvin Chow - Portola Valley CA, US
Chunming Niu - Palo Alto CA, US
Yaoling Pan - Union City CA, US
J. Wallace Parce - Palo Alto CA, US
Linda T. Romano - Sunnyvale CA, US
David Stumbo - Belmont CA, US
Assignee:

Nanosys, Inc. - Palo Alto CA
International Classification:

H01L 21/28
H01L 21/3205
US Classification:

438602, 438603, 438604, 438197
Abstract:

The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into an electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

Systems And Methods For Nanowire Growth And Harvesting
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US Patent:

7105428, Sep 12, 2006
Filed:

Apr 29, 2005
Appl. No.:

11/117703
Inventors:

Yaoling Pan - Union City CA, US
Xiangfeng Duan - Mountain View CA, US
Robert S. Dubrow - San Carlos CA, US
Jay L. Goldman - Mountain View CA, US
Shahriar Mostarshed - San Mateo CA, US
Chunming Niu - Palo Alto CA, US
Linda T. Romano - Sunnyvale CA, US
Dave Stumbo - Belmont CA, US
Assignee:

Nanosys, Inc. - Palo Alto CA
International Classification:

H01L 21/20
H01L 21/477
H01L 21/31
H01L 23/48
H01L 29/40
B01J 27/22
H01L 21/44
US Classification:

438584, 438795, 438798, 438962, 438759, 257734, 257746, 257E5104, 977742, 977843, 977743
Abstract:

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Nanowire Varactor Diode And Methods Of Making Same
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US Patent:

7115971, Oct 3, 2006
Filed:

Mar 23, 2004
Appl. No.:

10/806361
Inventors:

David Stumbo - Belmont CA, US
Jian Chen - Mountain View CA, US
David Heald - Solvang CA, US
Yaoling Pan - Union City CA, US
Assignee:

Nanosys, Inc. - Palo Alto CA
International Classification:

H01L 29/93
US Classification:

257600, 257E2907, 977762, 438379
Abstract:

A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.

Systems And Methods For Nanowire Growth And Harvesting
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US Patent:

7273732, Sep 25, 2007
Filed:

Jul 21, 2006
Appl. No.:

11/490636
Inventors:

Yaoling Pan - Union City CA, US
Xiangfeng Duan - Mountain View CA, US
Robert S. Dubrow - San Carlos CA, US
Jay L. Goldman - Mountain View CA, US
Shahriar Mostarshed - San Mateo CA, US
Chunming Niu - Palo Alto CA, US
Linda T. Romano - Sunnyvale CA, US
Dave Stumbo - Belmont CA, US
Assignee:

Nanosys, Inc. - Palo Alto CA
International Classification:

H01L 51/40
US Classification:

435 99, 438510, 438514, 438689, 257E51038, 257E5104, 977742
Abstract:

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Systems And Methods For Harvesting And Integrating Nanowires
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US Patent:

7339184, Mar 4, 2008
Filed:

Apr 29, 2005
Appl. No.:

11/117707
Inventors:

Linda T. Romano - Sunnyvale CA, US
Jian Chen - Mountain View CA, US
Xiangfeng Duan - Mountain View CA, US
Robert S. Dubrow - San Carlos CA, US
Stephen A. Empedocles - Menlo Park CA, US
Jay L. Goldman - Mountain View CA, US
James M. Hamilton - Sunnyvale CA, US
David L. Heald - Solvang CA, US
Francesco Lemmi - Sunnyvale CA, US
Chunming Niu - Palo Alto CA, US
Yaoling Pan - Union City CA, US
George Pontis - Redwood City CA, US
Vijendra Sahi - Menlo park CA, US
Erik C. Scher - San Francisco CA, US
David P. Stumbo - Belmont CA, US
Jeffery A. Whiteford - Belmont CA, US
Assignee:

Nanosys, Inc - Palo Alto CA
International Classification:

H01L 29/00
US Classification:

257 1, 117 84, 257E21001, 977938
Abstract:

The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

Fully Integrated Organic Layered Processes For Making Plastic Electronics Based On Conductive Polymers And Semiconductor Nanowires
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US Patent:

7345307, Mar 18, 2008
Filed:

Sep 22, 2005
Appl. No.:

11/233503
Inventors:

Yaoling Pan - Union City CA, US
Francisco Leon - Palo Alto CA, US
David P. Stumbo - Belmont CA, US
Assignee:

Nanosys, Inc. - Palo Alto CA
International Classification:

H01L 29/10
US Classification:

257 57, 257 40, 257 72, 257347, 257E21007, 977762, 977763, 977764
Abstract:

The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed. Several nanowire-TFT fabrication methods are also provided which in one exemplary embodiment includes providing a device substrate; depositing a first conductive polymer material layer on the device substrate; defining one or more gate contact regions in the conductive polymer layer; depositing a plurality of nanowires over the conductive polymer layer at a sufficient density of nanowires to achieve an operational current level; depositing a second conductive polymer material layer on the plurality of nanowires; and forming source and drain contact regions in the second conductive polymer material layer to thereby provide electrical connectivity to the plurality of nanowires, whereby the nanowires form a channel having a length between respective ones of the source and drain regions.

System And Process For Producing Nanowire Composites And Electronic Substrates Therefrom
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US Patent:

7468315, Dec 23, 2008
Filed:

Sep 14, 2005
Appl. No.:

11/225951
Inventors:

Mihai A. Buretea - San Francisco CA, US
Jian Chen - Mountain View CA, US
Calvin Y. H. Chow - Portola Valley CA, US
Chunming Niu - Palo Alto CA, US
Yaoling Pan - Union City CA, US
J. Wallace Parce - Palo Alto CA, US
Linda T. Romano - Sunnyvale CA, US
David P. Stumbo - Belmont CA, US
Assignee:

Nanosys, Inc. - Palo Alto GA
International Classification:

H01L 21/28
H01L 21/3205
US Classification:

438602, 438197, 438603, 257E2117, 257E214, 257E2105, 257E21459
Abstract:

The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into an electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.