Methods Of Forming At Least One Conductive Element, Methods Of Forming A Semiconductor Structure, Methods Of Forming A Memory Cell And Related Semiconductor Structures
Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the material. The methods enable formation of silver containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.
Semiconductor Structures And Memory Cells Including Conductive Material And Methods Of Fabrication
Scott E. Sills - Boise ID, US Whitney L. West - Boise ID, US Rob B. Goodwin - Eagle ID, US Nishant Sinha - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 45/00
US Classification:
257 4, 438382
Abstract:
Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.
- Boise ID, US Scott E. Sills - Boise ID, US Whitney L. West - Boise ID, US Rob B. Goodwin - Eagle ID, US Nishant Sinha - Boise ID, US
International Classification:
H01L 45/00 H01L 21/768 H01L 23/532
Abstract:
Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver-containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.
Semiconductor Devices Including Silver Conductive Materials
- Boise ID, US Scott E. Sills - Boise ID, US Whitney L. West - Boise ID, US Rob B. Goodwin - , US Nishant Sinha - Boise ID, US
International Classification:
H01L 45/00 H01L 21/768 H01L 23/532
Abstract:
Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver-containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.
Methods Of Forming Conductive Elements Of Semiconductor Devices And Of Forming Memory Cells
- Boise ID, US Scott E. Sills - Boise ID, US Whitney L. West - Boise ID, US Rob B. Goodwin - Eagle ID, US Nishant Sinha - Boise ID, US
International Classification:
H01L 45/00
Abstract:
Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.
University of Iowa College of Law 2008 - 2011
J.D.
New York University 2003 - 2007
B.A., Politics, Journalism
Skills:
Legal Research Legal Writing Writing Research Editing
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Whitney West
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Riverton High School, UVU, SLCC
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CVS Corporation - Pharmacy Technician
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Ferris State University
Whitney West
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Central Baptist College - Psychology
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First off I love JESUS. I am random and wanting to bring FREEDOM to others through my story of challenges, roller coasters, restoration, healing, hope! All this has happened because of the redemption ...
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Love God, Coffee Lover, Quirky, Free Spirited, Spunky, Random, READY TO CHANGE THE WORLD!
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Whitney West
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Whitney West
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Whitney West
Whitney West
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