Wesley M Grant

US Patent:

7179676, Feb 20, 2007

Filed:

Mar 28, 2005

Appl. No.:

11/091722

Inventors:

Gerhard Sollner - Winchester MA, US
Lawrence J. Kushner - Andover MA, US
Michael P. Anthony - Andover MA, US
Edward Kohler - Waltham MA, US
Wesley Grant - Winsted CT, US

Assignee:

Kenet, Inc. - Woburn MA

International Classification:

H01L 21/00
H01L 21/339

US Classification:

438 75, 438144, 438148, 257E21617

Abstract:

A technique for forming Charge-Coupled Devices (CCDs) in a conventional Complementary Metal Oxide Semiconductor (CMOS) process. A number of single-layer polysilicon gates are formed on an as-grown, native doped silicon substrate, with gaps between them. Masking is used to selectively dope the gates while preventing doping of the silicon in the gaps. Masking may likewise be used to selectively silicide the gates while preventing silicide formation in the gaps. Conventional source-drain processing produces input/output diffusions for the CCD.

US Patent:

20070161148, Jul 12, 2007

Filed:

Feb 20, 2007

Appl. No.:

11/709105

Inventors:

Gerhard Sollner - Winchester MA, US
Lawrence Kushner - Andover MA, US
Michael Anthony - Andover MA, US
Edward Kohler - Waltham MA, US
Wesley Grant - Winsted CT, US

International Classification:

H01L 21/00

US Classification:

438075000

Abstract:

A technique for forming Charge-Coupled Devices (CCDS) in a conventional Complementary Metal Oxide Semiconductor (CMOS) process. A number of single-layer polysilicon gates are formed on an as-grown, native doped silicon substrate, with gaps between them. Masking is used to selectively dope the gates while preventing doping of the silicon in the gaps. Masking may likewise be used to selectively silicide the gates while preventing silicide formation in the gaps. Conventional source-drain processing produces input/output diffusions for the CCD.