Wen Y Lin

US Patent:

6410974, Jun 25, 2002

Filed:

Mar 5, 2001

Appl. No.:

09/800049

Inventors:

Jerome Tsu-Rong Chu - Orlando FL
John D. LaBarre - Walnutport PA
Wen Lin - Allentown PA
Blair Miller - New Ringgold PA

Assignee:

Agere Systems Guardian Corp. - Orlando FL

International Classification:

H01L 2976

US Classification:

257531, 257328, 438369

Abstract:

The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably includes forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

US Patent:

62251821, May 1, 2001

Filed:

Aug 30, 1999

Appl. No.:

9/386132

Inventors:

Jerome Tsu-Rong Chu - Orlando FL
John D. LaBarre - Walnutport PA
Wen Lin - Allentown PA
Blair Miller - New Ringgold PA

Assignee:

Agere Systems Guardian Corp. - Miami Lakes FL

International Classification:

H01L 21331

US Classification:

438369

Abstract:

The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

US Patent:

20180227135, Aug 9, 2018

Filed:

Apr 4, 2018

Appl. No.:

15/945671

Inventors:

- Sunnyvale CA, US
Zhaohui Zhang - Westford MA, US
Wen Lin - Andover MA, US
Tapraj Singh - San Ramon CA, US

International Classification:

H04L 12/18
H04L 12/761
H04L 12/46

Abstract:

Techniques are described for utilizing Protocol Independent Multicast Sparse Mode (PIM-SM) to transport BUM (broadcast, unknown unicast, and multicast) traffic in a Virtual Extensible LAN (VXLAN) underlay of a data center, where the BUM traffic is received on active-active, multi-homed Ethernet virtual private network (EVPN) interconnects between multiple physical data centers. For example, the techniques may readily be applied to support usage of PIM-SM where provider edge (PE) routers of the EVPN operate as gateways between the EVPN and the VXLAN spanning the data center interconnect.

US Patent:

20160119156, Apr 28, 2016

Filed:

Dec 22, 2014

Appl. No.:

14/580185

Inventors:

- Sunnyvale CA, US
Zhaohui Zhang - Westford MA, US
Wen Lin - Andover MA, US
Tapraj Singh - San Ramon CA, US

International Classification:

H04L 12/18
H04L 12/761

Abstract:

Techniques are described for utilizing Protocol Independent Multicast Sparse Mode (PIM-SM) to transport BUM (broadcast, unknown unicast, and multicast) traffic in a Virtual Extensible LAN (VXLAN) underlay of a data center, where the BUM traffic is received on active-active, multi-homed Ethernet virtual private network (EVPN) interconnects between multiple physical data centers. For example, the techniques may readily be applied to support usage of PIM-SM where provider edge (PE) routers of the EVPN operate as gateways between the EVPN and the VXLAN spanning the data center interconnect.

Author:

Wen C. Lin

ISBN #:

0060440619

Author:

Wen C. Lin

ISBN #:

0849306701

Author:

Wen C. Lin

ISBN #:

0849342724