Gary L. Harnagel - La Verne CA Gerry T. Laga - Placentia CA Joseph M. Harrison - San Dimas CA Victor A. Twaddell - Fairport NY
Assignee:
General Dynamics, Pomona Division - Pomona CA
International Classification:
H01L 3118
US Classification:
29572
Abstract:
A platinum-cadmium sulfide Schottky barrier photovoltaic detector which is capable of sensing near ultraviolet and short wavelength visible radiation with extremely small response to wavelengths longer than about 5200 angstroms. The detector is fabricated with both the ohmic and barrier contacts located on the same side of the cadmium sulfide substrate to facilitate wire attachment by high-speed bonding techniques. A titanium-gold-titanium infrared shield structure is deposited directly on the substrate and is utilized to provide a connection between the ohmic contact and the substrate. An insulating layer of silicon dioxide covers the shield structure. A thin layer of platinum is deposited directly on the substrate in a small central optically active area surrounded by the insulated shield structure. A metal boundary layer overlies the periphery of the platinum layer and prevents the barrier contact metalization from affecting the properties of the Schottky barrier. Both the ohmic and barrier contacts may be formed of a titanium adhesion layer and a layer of gold.
Gary L. Harnagel - La Verne CA Gerry T. Laga - Placentia CA Joseph M. Harrison - San Dimas CA Victor A. Twaddell - Fairport NY
Assignee:
General Dynamics, Pomona Division - Pomona CA
International Classification:
H01L 2948
US Classification:
357 15
Abstract:
A platinum-cadmium sulfide Schottky barrier photovoltaic detector which is capable of sensing near ultraviolet and short wavelength visible radiation with extremely small response to wavelengths longer than about 5200 angstroms. The detector is fabricated with both the ohmic and barrier contacts located on the same side of the cadmium sulfide substrate to facilitate wire attachment by high-speed bonding techniques. A titanium-gold-titanium infrared shield structure is deposited directly on the substrate and is utilized to provide a connection between the ohmic contact and the substrate. An insulating layer of silicon dioxide covers the shield structure. A thin layer of platinum is deposited directly on the substrate in a small central optically active area surrounded by the insulated shield structure. A metal boundary layer overlies the periphery of the platinum layer and prevents the barrier contact metalization from affecting the properties of the Schottky barrier. Both the ohmic and barrier contacts may be formed of a titanium adhesive layer and a layer of gold.