Victor B Sapozhnikov from 14009 Mount Ter, Hopkins, MN 55345, age 71, Phone: 952 935-2676

view source

Edgard Tatouryan, President & Head Coach; Sergey Kashutin, Manager; Victor V. Sapozhnikov, International & Public Relations; Aleksey Schegelskiy, ...

V-Shape Magnetic Field Sensor With Anisotropy Induced Orthogonal Magnetic Alignment
view source
US Patent:

7271986, Sep 18, 2007
Filed:

Nov 26, 2002
Appl. No.:

10/304663
Inventors:

Victor B. Sapozhnikov - Minnetonka MN, US
Taras G. Pokhil - Arden Hills MN, US
Olle G. Heinonen - Eden Prairie MN, US
Janusz J. Nowak - Eden Prairie MN, US
Assignee:

Seagate Technology LLC - Scotts Valley CA
International Classification:

G11B 5/39
US Classification:

36032412
Abstract:

A magnetoresistive sensor having two free layers with shape anisotropy induced magnetic alignment is disclosed. The magnetoresistive sensor includes a first ferromagnetic free layer having a first quiescent state magnetization direction. The magnetoresistive sensor also includes a second elongated free layer having a second quiescent state magnetization direction and positioned such that the first quiescent state magnetization direction is generally orthogonal to the second quiescent state magnetization direction. Further, a portion of the second ferromagnetic free layer overlaps a portion of the first ferromagnetic free layer proximal to an air bearing surface to form a v-shape. A nonmagnetic spacer layer is also positioned between the first ferromagnetic free layer and the second ferromagnetic free layer.

Magnetic Sensor With In-Stack Biasing
view source
US Patent:

7570461, Aug 4, 2009
Filed:

Feb 28, 2005
Appl. No.:

11/068261
Inventors:

Victor B. Sapozhnikov - Minnetonka MN, US
Assignee:

Seagate Technology LLC - Scotts Valley CA
International Classification:

G11B 5/127
G11B 5/33
US Classification:

36032412, 3603272, 3603273
Abstract:

A magnetic sensor includes a sensor stack having a sensing layer. A first biasing structure having a first magnetization vector is positioned adjacent to the sensor stack to produce a biasing field that biases the sensing layer. A second biasing structure having a second magnetization vector is positioned within the sensor stack relative to the sensing layer to counter the biasing field at a center of the sensing layer.

Magnetic Element With Varying Areal Extents
view source
US Patent:

8580580, Nov 12, 2013
Filed:

Apr 1, 2010
Appl. No.:

12/752787
Inventors:

Victor Boris Sapozhnikov - Minnetonka MN, US
Eric Walter Singleton - Maple Plain MN, US
Kaizhong Gao - Eden Prairie MN, US
Dimitar V. Dimitrov - Edina MN, US
Assignee:

Seagate Technology LLC - Scotts Valley CA
International Classification:

H01L 21/00
H01L 29/82
H01L 21/02
G11C 11/00
US Classification:

438 3, 257421, 257295, 365158
Abstract:

An apparatus and associated method for a magnetic element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a free layer that has a first areal extent that is sensitive to a magnetic field and a synthetic antiferromagnetic (SAF) layer adjacent to the free layer and has a second areal extent that is greater than the first areal extent.

Magnetic Element With Reduced Shield-To-Shield Spacing
view source
US Patent:

8582249, Nov 12, 2013
Filed:

Apr 26, 2011
Appl. No.:

13/094530
Inventors:

Victor Boris Sapozhnikov - Minnetonka MN, US
Eric Walter Singleton - Maple Plain MN, US
Mark William Covington - Edina MN, US
Assignee:

Seagate Technology LLC - Scotts Valley CA
International Classification:

G11B 5/39
US Classification:

36032411, 36032412, 428811, 4288115
Abstract:

A magnetic element has a magnetically responsive lamination with a ferromagnetic free layer separated from a synthetic antiferromagnetic (SAF) layer by a spacer layer and from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The lamination is coupled to at least one antiferromagnetic (AFM) tab a predetermined offset distance from the ABS.

Method For Forming Thin Films With Lateral Composition Modulations
view source
US Patent:

20040206300, Oct 21, 2004
Filed:

May 11, 2004
Appl. No.:

10/842919
Inventors:

Victor Sapozhnikov - Minnetonka MN, US
International Classification:

C23C016/00
C23C014/00
C30B023/00
C30B025/00
C30B028/12
C30B028/14
C25B009/00
C25B011/00
C25B013/00
US Classification:

117/084000
Abstract:

A thin film structure is formed by simultaneously depositing at least two components onto a substantially planar substrate. Each component is deposited from a deposition direction different than the deposition directions from which the remaining components are deposited. The deposition directions are measured in a plane of the thin film structure. Each component is further deposited at a deposition angle which is measured with respect to a line perpendicular to the plane of the thin film structure. The deposition angles and deposition directions of the at least two components are oriented to cause the thin film structure to have atomic-scale lateral composition modulations.

High Frequency Assisted Writing
view source
US Patent:

20050207050, Sep 22, 2005
Filed:

Mar 17, 2004
Appl. No.:

10/802217
Inventors:

Taras Pokhil - Arden Hills MN, US
Victor Sapozhnikov - Minnetonka MN, US
Andrzej Stankiewicz - Edina MN, US
Janusz Nowak - Mahopac NY, US
Assignee:

Seagate Technology LLC - Scotts Valley CA
International Classification:

G11B005/09
G11B005/02
US Classification:

360039000, 360046000, 360055000
Abstract:

Data is written to a magnetic media, by applying a magnetic write field to the magnetic media with a write pole, in conjunction with a high frequency magnetic field, to the magnetic media to assist writing to the magnetic media. The high frequency magnetic field is generated by applying a specific write current waveform to the magnetic writer, resulting in the generation of a high frequency magnetic write field.

Controlling Thickness Uniformity And Interfaces In Stacks
view source
US Patent:

20100323100, Dec 23, 2010
Filed:

Jun 17, 2009
Appl. No.:

12/486354
Inventors:

Victor Boris Sapozhnikov - Minnetonka MN, US
Taras Grigorievich Pokhil - Arden Hills MN, US
Konstantin Nikolaev - Edina MN, US
Assignee:

SEAGATE TECHNOLOGY LLC - Scotts Valley CA
International Classification:

H05K 3/00
US Classification:

427 971
Abstract:

A method of creating a stack having multiple layers of deposited film onto a substrate is discussed. The method includes depositing a first layer of a first material onto the substrate and depositing a second layer onto the first layer. Depositing the second layer includes depositing a first amount of the second material onto the first layer at a first deposition temperature selected to set the normalized diffusion activation energy of the second material.

Magnetic Tunnel Junction Having Coherent Tunneling Structure
view source
US Patent:

20110006384, Jan 13, 2011
Filed:

Jul 13, 2009
Appl. No.:

12/501535
Inventors:

Xilin Peng - Bloomington MN, US
Konstantin Nikolaev - Edina MN, US
Taras Pokhil - Arden Hills MN, US
Victor Sapozhnikov - Minnetonka MN, US
Yonghua Chen - Edina MN, US
Assignee:

SEAGATE TECHNOLOGY LLC - Scotts Valley CA
International Classification:

H01L 29/82
B05D 5/12
US Classification:

257421, 427131, 257E29323
Abstract:

A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.