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Vamsi Krishna Devarapalli

age ~47

from Fishkill, NY

Also known as:
  • Vamsi K Devarapalli
  • Vamsikrishn K Devarapalli
  • Devarapalli Vamsi
  • Vamsi L
  • Vamsi I

Vamsi Devarapalli Phones & Addresses

  • Fishkill, NY
  • Wappingers Falls, NY
  • Wilmington, DE
  • Stormville, NY
  • Albany, NY
  • Edison, NJ
  • Potsdam, NY
  • Cleveland, OH
  • Audubon, PA

Work

  • Company:
    Ibm
    Jan 2009 to Jul 2015
  • Position:
    Advisory engineer and scientist

Education

  • Degree:
    Doctorates, Doctor of Philosophy
  • School / High School:
    Clarkson University
    2005 to 2009
  • Specialities:
    Engineering

Skills

Semiconductors • Semiconductor Fabrication • Semiconductor Process Integration • Semiconductor Manufacturing • Cvd • Wet E • Process C • Metrolo • Design of Experiments • Testing • Nanotechnology • R&D • Simulations • C • Research • C++ • Requirements Analysis • Thin Films • Matlab • Characterization • Materials Science • Engineering • Research and Development

Languages

Hindi

Industries

Information Technology And Services

Us Patents

  • Abrasive Compositions For Chemical Mechanical Polishing And Methods For Using Same

    view source
  • US Patent:
    20100081281, Apr 1, 2010
  • Filed:
    Sep 25, 2009
  • Appl. No.:
    12/586651
  • Inventors:
    Suryadevara V. Babu - Potsdam NY, US
    Pradeepa Dandu - Potsdam NY, US
    Vamsi K. Devarapalli - Albany NY, US
    Guillaume Criniere - Ixelles, BE
    Claire Pitois - Sunbyberg, SE
  • Assignee:
    RHODIA OPERATIONS - Aubervilliers
    CLARKSON UNIVERSITY - Potsdam NY
  • International Classification:
    H01L 21/304
    C09K 13/00
  • US Classification:
    438693, 252 791, 257E2123
  • Abstract:
    A colloidal dispersion for chemical mechanical polishing comprising: (a) an abrasive component; and (b) from about 0.05% to about 10% by weight of the abrasive component, a water-soluble amphoteric polymer comprising at least one macromolecular chain B and a part A bonded to a single end of the at least one macromolecular chain B, wherein the macromolecular chain B is derived from one or more ethylenically unsaturated monomers having quaternary ammonium groups or inium groups, and wherein the part A is a polymeric or nonpolymeric group comprising at least one anionic group; wherein the dispersion has a pH of between about 1.5 and about 6. The colloidal dispersion is capable of polishing a substrate comprising silicon nitride and silicon oxide with a reverse selectivity ratio of at least about 27, typically at least 50 the reverse selectivity ratio being the ratio of the rate of removal of the silicon nitride to the rate of removal of the silicon oxide.
  • Abrasive Compositions For Chemical Polishing And Methods For Using Same

    view source
  • US Patent:
    20130122705, May 16, 2013
  • Filed:
    Jan 3, 2013
  • Appl. No.:
    13/733580
  • Inventors:
    Suryadevara V. BABU - Potsdam NY, US
    Pradeepa DANDU - Potsdam NY, US
    Vamsi K. DEVARAPALLI - Albany NY, US
    Guillaume CRINIERE - Ixelles, BE
    Claire PITOIS - Sunbyberg, SE
  • Assignee:
    Clarkson University - Potsdam NY
    Rhodia Operations - Aubervilliers
  • International Classification:
    H01L 21/306
  • US Classification:
    438693
  • Abstract:
    A colloidal dispersion for chemical mechanical polishing comprising: (a) an abrasive component; and (b) from about 0.05% to about 10% by weight of the abrasive component, a water-soluble amphoteric polymer comprising at least one macromolecular chain B and a part A bonded to a single end of the at least one macromolecular chain B, wherein the macromolecular chain B is derived from one or more ethylenically unsaturated monomers having quaternary ammonium groups or inium groups, and wherein the part A is a polymeric or nonpolymeric group comprising at least one anionic group; wherein the dispersion has a pH of between about 1.5 and about 6. The colloidal dispersion is capable of polishing a substrate comprising silicon nitride and silicon oxide with a reverse selectivity ratio of at least about 27, typically at least 50 the reverse selectivity ratio being the ratio of the rate of removal of the silicon nitride to the rate of removal of the silicon oxide.

Resumes

Vamsi Devarapalli Photo 1

Senior Member Of Technical Staff

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Location:
Fishkill, NY
Industry:
Information Technology And Services
Work:
Ibm Jan 2009 - Jul 2015
Advisory Engineer and Scientist

Globalfoundries Jan 2009 - Jul 2015
Senior Member of Technical Staff

Ibm Jan 2008 - Jan 2009
Intern

Clarkson University 2002 - 2006
Research Assistant

Ferro Corporation Cleveland Sep 2004 - May 2005
Research Co-Op
Education:
Clarkson University 2005 - 2009
Doctorates, Doctor of Philosophy, Engineering
Clarkson University 2002 - 2004
Masters, Mechanical Engineering
Skills:
Semiconductors
Semiconductor Fabrication
Semiconductor Process Integration
Semiconductor Manufacturing
Cvd
Wet E
Process C
Metrolo
Design of Experiments
Testing
Nanotechnology
R&D
Simulations
C
Research
C++
Requirements Analysis
Thin Films
Matlab
Characterization
Materials Science
Engineering
Research and Development
Languages:
Hindi

Googleplus

Vamsi Devarapalli Photo 2

Vamsi Devarapalli


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