Ting Y Chu

US Patent:

40778185, Mar 7, 1978

Filed:

Jun 4, 1976

Appl. No.:

5/693074

Inventors:

Ting L. Chu - Dallas TX

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 2120
H01L 21324
H01L 2184

US Classification:

148174

Abstract:

Low-cost polycrystalline silicon solar cells supported on substrates are prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical-grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices are formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon is substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

US Patent:

39619974, Jun 8, 1976

Filed:

May 12, 1975

Appl. No.:

5/576488

Inventors:

Ting L. Chu - Dallas TX

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 3100
H01L 2714
H01L 2904

US Classification:

148174

Abstract:

Low-cost polycrystalline silicon cells supported on substrates are prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical-grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices are formed which effectively convert solar energy to electrical energy.

US Patent:

47924608, Dec 20, 1988

Filed:

Jul 15, 1986

Appl. No.:

6/885916

Inventors:

Ting L. Chu - Dallas TX
Shirley S. Chu - Dallas TX

Assignee:

Electric Power Research Institute, Inc. - Palo Alto CA

International Classification:

B05D 306

US Classification:

427 35

Abstract:

A process is provided for forming high purity polysilanes or polygermanes by electric discharge wherein the monosilane or monogermane is provided in a gaseous mixture with a carrier gas at atmospheric pressure. The polysilanes or polygermanes produced at atmospheric pressure are further deposited by various means onto a substrate as hydrogenated amorphous silicon or germanium. The polysilane may also be used for the deposition of hydrogenated amorphous silicon alloys.