Timothy J Brosnihan from 3704 Kenora Ct, Austin, TX 78738, age 54, Phone: 512 838-6307

Name / Title

Company / Classification

Phones & Addresses

Timothy Brosnihan
Clerk

TUN TAVERN SOCIETY OF CENTRAL MASSACHUSETTS INCORPORATED, THE

7 Ernest Ave, Worcester, MA 01604
243 Sycamore Dr, Holden, MA 01520

Method Of Fabricating A Microfabricated High Aspect Ratio Device With Electrical Isolation
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US Patent:

6960488, Nov 1, 2005
Filed:

Jun 29, 1999
Appl. No.:

09/342348
Inventors:

Timothy J. Brosnihan - Berkeley CA, US
James Bustillo - Castro Valley CA, US
William A. Clark - Fremont CA, US
Assignee:

The Regents of the University of California - Oakland CA
International Classification:

H01L021/00
G01P015/125
US Classification:

438 52, 438 50, 7351432
Abstract:

A microfabricated device having a high vertical aspect ratio and electrical isolation between a structure region and a circuit region. The device may be fabricated on a single substrate and may include electrical interconnections between the structure region and the circuit region. The device includes a substrate and an isolation trench surrounding a structure region in the substrate. The isolation trench includes a lining of a dielectric insulative material. A plurality of microstructure elements are located in the structure region and are laterally anchored to the isolation trench.

Single Crystal Silicon Sensor With Additional Layer And Method Of Producing The Same
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US Patent:

7138694, Nov 21, 2006
Filed:

Mar 2, 2004
Appl. No.:

10/791638
Inventors:

Thomas Kieran Nunan - Carlisle MA, US
Timothy J. Brosnihan - Natick MA, US
Assignee:

Analog Devices, Inc. - Norwood MA
International Classification:

H01L 29/82
US Classification:

257419, 257415, 257E29324
Abstract:

A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.

Sensor System
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US Patent:

7327003, Feb 5, 2008
Filed:

Feb 15, 2005
Appl. No.:

11/058483
Inventors:

John R. Martin - Foxborough MA, US
Timothy J. Brosnihan - Natick MA, US
Michael W. Judy - Wakefield MA, US
Xin Zhang - Acton MA, US
Assignee:

Analog Devices, Inc. - Norwood MA
International Classification:

H01L 29/84
US Classification:

257414, 257415, 257E29324
Abstract:

Rather than increasing the mass of the structure, the structure in a sensor system suspends its substrate from some mechanical ground. Motion of the substrate relative to the mechanical ground thus provides the movement information. To those ends, the sensor system includes a base, a substrate, and a flexible member suspended from at least a portion of the substrate. At least a portion of the flexible member is capable of moving relative to at least a portion of the substrate. In addition, the flexible member is secured to the base, thus causing the substrate to be movable relative to the base. Moreover, the mass of the substrate is greater than the mass of the flexible member. The substrate and flexible member are configured to interact to produce a motion signal identifying movement of the base.

Vapor Hf Etch Process Mask And Method
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US Patent:

7338614, Mar 4, 2008
Filed:

Apr 4, 2006
Appl. No.:

11/397409
Inventors:

John R. Martin - Foxborough MA, US
Timothy J. Brosnihan - Natick MA, US
Assignee:

Analog Devices, Inc. - Norwood MA
International Classification:

B44C 1/22
C03C 15/00
C03C 25/68
C23F 1/00
US Classification:

216 49, 216 58
Abstract:

A method of processing a semiconductor wafer provides a wafer, and then forms an organic mask on at least a portion of the wafer. The method then applies a vapor etching process to the wafer through holes in the organic mask.

Display Apparatus And Methods For Manufacture Thereof
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US Patent:

7405852, Jul 29, 2008
Filed:

Feb 23, 2006
Appl. No.:

11/361785
Inventors:

Timothy J. Brosnihan - Natick MA, US
Jasper Lodewyk Steyn - Winchester MA, US
Jignesh Gandhi - Burlington MA, US
John J. Fijol - Shrewsbury MA, US
Richard S. Payne - Andover MA, US
Roger Barton - Andover MA, US
Assignee:

Pixtronix, Inc. - Andover MA
International Classification:

G02B 26/08
G02B 26/00
G09G 3/34
US Classification:

359198, 359290, 345109
Abstract:

Display devices incorporating shutter-based light modulators are disclosed along with methods of manufacturing such devices. The methods are compatible with thin-film manufacturing processes known in the art and result in displays having lower power-consumption.

Method Of Forming A Device By Removing A Conductive Layer Of A Wafer
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US Patent:

7491566, Feb 17, 2009
Filed:

Feb 2, 2005
Appl. No.:

11/049205
Inventors:

Timothy J. Brosnihan - Natick MA, US
John M. Sledziewski - Hanover MA, US
Assignee:

Analog Devices, Inc. - Norwood MA
International Classification:

H01L 21/00
US Classification:

438 50, 438 48, 257417
Abstract:

A method of forming a MEMS device provides a wafer having a base, a first conductive layer, a second conductive layer, and an intermediate conductive layer. After it provides the wafer, the method removes at least a portion of the intermediate conductive layer to form a cavity between the first and second conductive layers. At least a portion of the first conductive layer is movable relative to the base to form a diaphragm, while the second conductive layer is substantially immovable relative to the base. After it forms the cavity, the method seals the cavity.

Integrated Microphone
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US Patent:

7795695, Sep 14, 2010
Filed:

Sep 27, 2006
Appl. No.:

11/535804
Inventors:

Jason W. Weigold - Somerville MA, US
John R. Martin - Foxborough MA, US
Timothy J. Brosnihan - Natick MA, US
Assignee:

Analog Devices, Inc. - Norwood MA
International Classification:

H01L 29/84
H04R 25/00
US Classification:

257419, 381175, 181167
Abstract:

A method of forming a microphone having a variable capacitance first deposits high temperature deposition material on a die. The high temperature material ultimately forms structure that contributes to the variable capacitance. The method then forms circuitry on the die after depositing the deposition material. The circuitry is configured to detect the variable capacitance.

Method Of Forming A Device By Removing A Conductive Layer Of A Wafer
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US Patent:

7816165, Oct 19, 2010
Filed:

Jan 9, 2009
Appl. No.:

12/350986
Inventors:

Timothy J. Brosnihan - Natick MA, US
John M. Sledziewski - Hanover MA, US
Assignee:

Analog Devices, Inc. - Norwood MA
International Classification:

H01L 21/00
US Classification:

438 48, 438 61, 438 68, 347 54, 347 69, 361700
Abstract:

A method of forming a MEMS device provides a wafer having a base with a conductive portion. The wafer also has an intermediate conductive layer. After it provides the wafer, the method adds a diaphragm layer to the wafer. The method removes at least a portion of the intermediate conductive layer to form a cavity between the diaphragm layer and the base. At least a portion of the diaphragm layer is movable relative to the base. After it forms the cavity, the method seals the cavity.

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Timothy J Brosnihan