Thomas R Gaffney

US Patent:

6858697, Feb 22, 2005

Filed:

Dec 21, 2001

Appl. No.:

10/029892

Inventors:

Steven Gerard Mayorga - Oceanside CA, US
Manchao Xiao - San Diego CA, US
Thomas Richard Gaffney - Carlsbad CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C07F007/21

US Classification:

528 31, 556451, 556460, 524588

Abstract:

The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a neutral to weakly acidic polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a neutral to weakly acidic polymerization inhibitor. A free radical scavenger can also be included in the process and composition.

US Patent:

7101948, Sep 5, 2006

Filed:

Jun 23, 2003

Appl. No.:

10/602279

Inventors:

Steven Gerard Mayorga - Oceanside CA, US
Manchao Xiao - San Diego CA, US
Thomas Richard Gaffney - Carlsbad CA, US
Robert George Syvret - Allentown PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C07F 7/21

US Classification:

528 31, 556451, 556460, 524588

Abstract:

The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.

US Patent:

7300995, Nov 27, 2007

Filed:

Jul 11, 2006

Appl. No.:

11/484094

Inventors:

Steven Gerard Mayorga - Oceanside CA, US
Manchao Xiao - San Diego CA, US
Thomas Richard Gaffney - Carlsbad CA, US
Robert George Syvret - Allentown PA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C07F 7/21

US Classification:

528 31, 556451, 556460, 524588

Abstract:

The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.

US Patent:

7303607, Dec 4, 2007

Filed:

Jun 14, 2004

Appl. No.:

10/867068

Inventors:

Daniel Joseph Tempel - Macungie PA, US
Philip Bruce Henderson - Allentown PA, US
Jeffrey Richard Brzozowski - Kunkletown PA, US
Ronald Martin Pearlstein - Macungie PA, US
Thomas Richard Gaffney - Carlsbad CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

F17C 11/00
B01D 19/00

US Classification:

95241, 222 3

Abstract:

This invention relates to an improvement in a low-pressure storage and delivery system for gases having Lewis basicity, particularly hazardous specialty gases such as phosphine and arsine, which are utilized in the electronics industry. The improvement resides in storing the gases in a liquid incorporating a reactive compound having Lewis acidity capable of effecting a reversible reaction between a gas having Lewis basicity. The reactive compound comprises a reactive species that is dissolved, suspended, dispersed, or otherwise mixed with a nonvolatile liquid.

US Patent:

7678422, Mar 16, 2010

Filed:

Dec 4, 2007

Appl. No.:

11/949868

Inventors:

Xinjian Lei - Vista CA, US
Hareesh Thridandam - Vista CA, US
Manchao Xiao - San Diego CA, US
Heather Regina Bowen - Vista CA, US
Thomas Richard Gaffney - Carlsbad CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C23C 16/18
C23C 16/30

US Classification:

42725529, 42725531, 42725536, 427255394, 118 84, 118 88

Abstract:

A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—Hfragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more HSi—NR(R═SiH, R, Ror R, defined below) groups selected from the group consisting of one or more of:.

US Patent:

7875312, Jan 25, 2011

Filed:

May 23, 2006

Appl. No.:

11/439554

Inventors:

Hareesh Thridandam - Vista CA, US
Manchao Xiao - San Diego CA, US
Xinjian Lei - Vista CA, US
Thomas Richard Gaffney - Carlsbad CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C23C 16/00

US Classification:

4272481

Abstract:

The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas:The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

US Patent:

7960205, Jun 14, 2011

Filed:

Nov 18, 2008

Appl. No.:

12/272886

Inventors:

Manchao Xiao - San Diego CA, US
Liu Yang - Yorba Linda CA, US
Thomas Richard Gaffney - Carlsbad CA, US

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

H01L 21/00

US Classification:

438 95, 438 99, 438102, 257 40, 257E21068

Abstract:

The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

US Patent:

8129555, Mar 6, 2012

Filed:

Aug 12, 2008

Appl. No.:

12/190125

Inventors:

Hansong Cheng - Allentown PA, US
Manchao Xiao - San Diego CA, US
Gauri Sankar Lal - Whitehall PA, US
Thomas Richard Gaffney - Carlsbad CA, US
Chenggang Zhou - Wuhan, CN
Jinping Wu - Wuhan, CN

Assignee:

Air Products and Chemicals, Inc. - Allentown PA

International Classification:

C07F 7/10
H01L 21/31

US Classification:

556410, 548406, 546 14, 438778, 257E21269

Abstract:

Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):(RRN)SiR  (I)wherein substituents Rand Rare each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents Rand Rcomprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO, PO(OR), OR, SO, SO, SOR and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, Ris chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.