Thomas H Gabert

US Patent:

20130207235, Aug 15, 2013

Filed:

Feb 13, 2012

Appl. No.:

13/371605

Inventors:

Margaret A. Faucher - South Burlington VT, US
Paula M. Fisher - Milton VT, US
Thomas H. Gabert - Essex Junction VT, US
Joseph P. Hasselbach - Burlington VT, US
Qizhi Liu - Lexington MA, US
Glenn C. MacDougall - Covington LA, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 21/331
H01L 29/73
B82Y 99/00

US Classification:

257565, 438364, 977755, 257E29174, 257E2137

Abstract:

Aspects of the invention provide a method of forming a bipolar junction transistor. The method includes: providing a semiconductor substrate including a uniform silicon nitride layer over an emitter pedestal, and a base layer below the emitter pedestal; applying a photomask at a first end and a second end of a base region; and performing a silicon nitride etch with the photomask to simultaneously form silicon nitride spacers adjacent to the emitter pedestal and exposing the base region of the bipolar junction transistor. The silicon nitride etch may be an end-pointed etch.

US Patent:

20120161255, Jun 28, 2012

Filed:

Dec 28, 2010

Appl. No.:

12/979592

Inventors:

Thomas H. Gabert - Essex Junction VT, US
Joseph P. Hasselbach - Burlington VT, US
Anthony K. Stamper - Williston VT, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 29/84
H01L 21/48

US Classification:

257415, 438 51, 257E29324, 257E21002

Abstract:

Embodiments of the invention provide methods of sealing a micro electromechanical systems (MEMS) cavity and devices resulting therefrom. A first aspect of the invention provides a method of sealing a micro electromechanical systems (MEMS) cavity in a substrate, the method comprising: forming in a substrate a cavity filled with a sacrificial material; forming a lid over the cavity; forming at least one vent hole over the lid extending to the cavity; removing the sacrificial material from the cavity; depositing a first material onto the lid such that a size of at least one vent hole at a surface of the substrate is reduced but not sealed; and depositing a second material onto the first material to seal the at least one vent hole, wherein a MEMS cavity within the substrate and beneath the at least one vent hole substantially retains a pressure at which the at least one vent hole is sealed by the second material.

US Patent:

20150054123, Feb 26, 2015

Filed:

Oct 23, 2014

Appl. No.:

14/522090

Inventors:

- Armonk NY, US
Paula M. Fisher - Milton VT, US
Thomas H. Gabert - Essex Junction VT, US
Joseph P. Hasselbach - Burlington VT, US
Qizhi Liu - Lexington MA, US
Glenn C. MacDougall - Covington LA, US

International Classification:

H01L 29/732
H01L 29/161
H01L 29/10
H01L 29/06
H01L 29/08

US Classification:

257526

Abstract:

Aspects of the invention provide a method of forming a bipolar junction transistor. The method includes: providing a semiconductor substrate including a uniform silicon nitride layer over an emitter pedestal, and a base layer below the emitter pedestal; applying a photomask at a first end and a second end of a base region; and performing a silicon nitride etch with the photomask to simultaneously form silicon nitride spacers adjacent to the emitter pedestal and exposing the base region of the bipolar junction transistor. The silicon nitride etch may be an end-pointed etch.