Takashi Enomoto

US Patent:

7473377, Jan 6, 2009

Filed:

Oct 7, 2004

Appl. No.:

10/959152

Inventors:

Tomoyo Yamaguchi - Nirasaki, JP
Takashi Fuse - Nirasaki, JP
Kiwamu Fujimoto - Nirasaki, JP
Masanobu Honda - Nirasaki, JP
Kazuya Nagaseki - Nirasaki, JP
Akiteru Koh - Nirasaki, JP
Takashi Enomoto - Beverly MA, US
Hiroharu Ito - Nirasaki, JP
Akinori Kitamura - Nirasaki, JP

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

B44C 1/22

US Classification:

216 22, 216 49, 216 62, 216 72, 438706, 438710, 438712, 438725, 438738

Abstract:

A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with Hplasma to improve plasma resistance of the organic layer.

US Patent:

7743731, Jun 29, 2010

Filed:

Mar 30, 2006

Appl. No.:

11/392949

Inventors:

Takashi Enomoto - Salem MA, US
Masaaki Hagihara - Peabody MA, US
Akiteru Ko - Peabody MA, US
Shinji Hamamoto - Salem MA, US
Masafumi Urakawa - Salem MA, US
Edward Heller - Bedford MA, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

C23C 16/50
C23C 16/505
C23C 16/509
C23C 16/06
C23C 16/22

US Classification:

118723E, 15634533, 15634534, 15634543, 15634545

Abstract:

A gas injection system includes a diffuser to distribute a process gas in a processing chamber. The gas injection system may be utilized in a polysilicon etching system involving corrosive process gases.

US Patent:

7969572, Jun 28, 2011

Filed:

Jan 16, 2008

Appl. No.:

12/015156

Inventors:

Tsuyoshi Moriya - Nirasaki, JP
Takashi Enomoto - Albany NY, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G01N 21/00

US Classification:

356338, 356335

Abstract:

A particle monitor system that can detect fine particles in a substrate processing apparatus. The substrate processing apparatus has a chamber in which a substrate is housed and subjected to processing, a dry pump that exhausts gas out of the chamber, and a bypass line that communicates the chamber and the dry pump together. The particle monitor system has a laser light oscillator that irradiates laser light toward a space in which the particles may be present, and a laser power measurement device that is disposed on an optical path of the laser light having passed through the space and measures the energy of the laser light.

US Patent:

8218145, Jul 10, 2012

Filed:

May 19, 2011

Appl. No.:

13/111520

Inventors:

Tsuyoshi Moriya - Nirasaki, JP
Takashi Enomoto - Albany NY, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G01N 21/00

US Classification:

356338, 356335

Abstract:

A particle monitor system that can detect fine particles in a substrate processing apparatus. The substrate processing apparatus has a chamber in which a substrate is housed and subjected to processing, a dry pump that exhausts gas out of the chamber, and a bypass line that communicates the chamber and the dry pump together. The particle monitor system has a laser light oscillator that irradiates laser light toward a space in which the particles may be present, and a laser power measurement device that is disposed on an optical path of the laser light having passed through the space and measures the energy of the laser light.

US Patent:

8501628, Aug 6, 2013

Filed:

Mar 23, 2010

Appl. No.:

12/729538

Inventors:

Vinh Hoang Luong - Boise ID, US
Hiroyuki Takahashi - Tokyo, JP
Akiteru Ko - Schenectady NY, US
Asao Yamashita - Tokyo, JP
Vaidya Bharadwaj - Austin TX, US
Takashi Enomoto - Rensselaer NY, US
Daniel J. Prager - Hopewell Junction NY, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L 21/302

US Classification:

438706, 438712, 438720, 438733

Abstract:

A method for etching a differential metal gate structure on a substrate is described. The differential metal gate structure includes a metal gate layer overlying a high dielectric constant (high-k) dielectric layer, wherein the metal gate layer comprises a different thickness at different regions on the substrate. The metal gate layer is patterned by using a plasma etching process, wherein at least one etch step includes forming plasma using a halogen-containing gas and at least one etch step includes forming plasma using an additive gas having as atomic constituents C, H, and F.

US Patent:

20080217294, Sep 11, 2008

Filed:

Mar 9, 2007

Appl. No.:

11/684072

Inventors:

Akiteru Ko - Peabody MA, US
Takashi Enomoto - Rensselaer NY, US
Asao Yamashita - Fishkill NY, US

Assignee:

TOKYO ELECTRON LIMITED - Tokyo

International Classification:

B44C 1/22
G06F 19/00

US Classification:

216 57, 700 96

Abstract:

A method of etching a hafnium containing layer includes disposing a substrate having the hafnium containing layer in a plasma processing system, wherein a mask layer defining a pattern therein overlies the hafnium containing layer. A process gas including a HBr gas is introduced to the plasma processing system, and a plasma is formed from the process gas in the plasma processing system. The hafnium containing layer is exposed to the plasma in order to treat the hafnium containing layer. The hafnium containing layer is then wet etched using a dilute HF wet etch process.