Methods of fabricating a high power RF lateral diffused MOS transistor (LDMOS) having increased reliability includes fabricating an N-drift region for the drain prior to fabrication of the gate contact and other process steps in fabricating the transistor. The resulting device has reduced adverse affects from hot carrier injection including reduced threshold voltage shift over time and reduced maximum current reduction over time. Linearity of device is maximized along with increased reliability while channel length is reduced.
Mosfet Device Having Recessed Gate-Drain Shield And Method
Hebert Francois - San Mateo CA Szehim Ng - Campbell CA
Assignee:
Spectrian, Inc. - Sunnyvale CA
International Classification:
H01L 2176 H01L 21336 H01L 21338 H01L 2976
US Classification:
438454
Abstract:
A method of fabricating a MOSFET transistor and resulting structure having a drain-gate feedback capacitance shield formed in a recess between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since one additional non-critical mask is required with selective etch used to create the recess.
Mosfet Device Having Recessed Gate-Drain Shield And Method
Francois Hebert - San Mateo CA Szehim Ng - Campbell CA
Assignee:
Spectrian Corporation - Sunnyvale CA
International Classification:
H01L 2978
US Classification:
257340
Abstract:
A method of fabricating a MOSFET transistor and resulting structure having a drain-gate feedback capacitance shield formed in a recess between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since one additional non-critical mask is required with selective etch used to create the recess.
Self-Aligned Shield Structure For Realizing High Frequency Power Mosfet Devices With Improved Reliability
Francois Hebert - San Mateo CA Szehim Ng - Campbell CA
Assignee:
CREE, Inc. - Durham NC
International Classification:
H01L 2976
US Classification:
257327
Abstract:
A high frequency power field effect transistor has a self-aligned gate-drain shield adjacent to the gate and overlying the drain. Fabrication of the structure does not require complex or costly processing and the resulting self-aligned shield structure minimizes increase to input and output capacitances. Hot carrier injection and related shifts are reduced thereby improving reliability of the transistor.