Kishore K. Chakravorty - San Jose CA Swayambu Ramani - San Jose CA Stephanie J. Oberg - Sunnyvale CA Johan Knall - Sunnyvale CA Duane A. Haven - Umpqua OR Ronald S. Besser - Ruston LA Paul J. Louris - Mountain View CA Arthur J. Learn - Cupertino CA Christopher J. Spindt - Menlo Park CA Roger W. Barton - Tofte MN
Assignee:
Candescent Intellectual Property Services, Inc. - San Jose CA
International Classification:
H01J 102
US Classification:
313495, 313309, 313336, 313351, 313310
Abstract:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a emitter electrode metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form emitter electrode metal gives emitter electrode metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
George R. Brandes - Southbury CT Charles P. Beetz - New Milford CT Xueping Xu - Danbury CT Swayambu V. Ramani - San Jose CA Ronald S. Besser - Sunnyvale CA
Assignee:
Advanced Technology Materials, Inc. - Danbury CT Silicon Video Corporation - San Jose CA
International Classification:
H01L 310312
US Classification:
257 77
Abstract:
Integrated circuits, including field emission devices, have a resistor element of amorphous Si. sub. x C. sub. 1-x wherein 0
Electron-Emitting Device Having Multi-Layer Resistor
N. Johan Knall - Sunnyvale CA Duane A. Haven - Umpqua OR Swayambu Ramani - San Jose CA
Assignee:
Candescent Technologies Corporation - San Jose CA
International Classification:
H01J 6304
US Classification:
3151693
Abstract:
An electron-emitting device employs a multi-layer resistor (46). A lower layer (48) of the resistor overlies an emitter electrode (42). A set of electron-emissive elements (54) overlie an upper layer (50) of the resistor. Each resistive layer extends continuously from a location below each electron-emissive element to a location below each other electron-emissive element. The two resistive layers are of different chemical composition. The upper resistive layer is typically formed with cermet. The lower resistive layer is typically formed with a silicon-carbon compound.
George R. Brandes - Southbury CT Charles P. Beetz - New Milford CT Xueping Xu - Danbury CT Swayambu V. Ramani - San Jose CA Ronald S. Besser - Sunnyvale CA
Assignee:
Advanced Technology Materials, Inc. - Danbury CT Silicon Video Corporation - San Jose CA
International Classification:
H01L 2100
US Classification:
438 20
Abstract:
Integrated circuits, including field emission devices, have a resistor element of amorphous Si. sub. x C. sub. 1-x wherein 0
A thin-film coupled to a substrate includes a first layer and a second layer. Both layers are made of the same material, which is either a transition or a refractory metal. The first layer is doped by nitrogen and the second layer is not. The thin-film has lower stress level than a film made of the same material and having similar thickness as the thin-film, but without doping the film by nitrogen. Also, the thin-film has a lower sheet resistance than a film made of the same material, having similar thickness as the thin-film, and with similar atom percentage of nitrogen as the first layer. In one embodiment, the thin-film is used in a flat panel display.
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