Search

Swayambu V Ramani

age ~82

from Morgan Hill, CA

Also known as:
  • Swayambu Y Ramani
  • Ram Ramani
  • Steven V Ramani
  • Sweyambu V Ramani
  • Swayambu V Ramari
  • U Ramani
  • Swayambu R
Phone and address:
18375 Capistrano Way, Morgan Hill, CA 95037
408 401-0058

Swayambu Ramani Phones & Addresses

  • 18375 Capistrano Way, Morgan Hill, CA 95037 • 408 401-0058
  • Sunnyvale, CA
  • 4948 Arundel Ct, San Jose, CA 95136
  • Santa Clara, CA
  • 18375 Capistrano Way, Morgan Hill, CA 95037

Us Patents

  • Dual-Layer Metal For Flat Panel Display

    view source
  • US Patent:
    6448708, Sep 10, 2002
  • Filed:
    May 31, 2000
  • Appl. No.:
    09/588118
  • Inventors:
    Kishore K. Chakravorty - San Jose CA
    Swayambu Ramani - San Jose CA
    Stephanie J. Oberg - Sunnyvale CA
    Johan Knall - Sunnyvale CA
    Duane A. Haven - Umpqua OR
    Ronald S. Besser - Ruston LA
    Paul J. Louris - Mountain View CA
    Arthur J. Learn - Cupertino CA
    Christopher J. Spindt - Menlo Park CA
    Roger W. Barton - Tofte MN
  • Assignee:
    Candescent Intellectual Property Services, Inc. - San Jose CA
  • International Classification:
    H01J 102
  • US Classification:
    313495, 313309, 313336, 313351, 313310
  • Abstract:
    A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a emitter electrode metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form emitter electrode metal gives emitter electrode metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
  • Dual-Layer Metal For Flat Panel Display

    view source
  • US Patent:
    58941886, Apr 13, 1999
  • Filed:
    Sep 17, 1997
  • Appl. No.:
    8/932318
  • Inventors:
    Swayambu Ramani - San Jose CA
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    H01J 102
  • US Classification:
    313309
  • Abstract:
    A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
  • Dual-Layer Metal For Flat Panel Display

    view source
  • US Patent:
    62257323, May 1, 2001
  • Filed:
    Nov 9, 1999
  • Appl. No.:
    9/437346
  • Inventors:
    Swayambu Ramani - San Jose CA
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    H01J 102
  • US Classification:
    313309
  • Abstract:
    A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
  • Dual-Layer Metal For Flat Panel Display

    view source
  • US Patent:
    60196572, Feb 1, 2000
  • Filed:
    Oct 29, 1998
  • Appl. No.:
    9/183601
  • Inventors:
    Swayambu Ramani - San Jose CA
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    H01J 902
  • US Classification:
    445 24
  • Abstract:
    A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
  • Integrated Circuit Devices And Methods Employing Amorphous Silicon Carbide Resistor Materials

    view source
  • US Patent:
    60312505, Feb 29, 2000
  • Filed:
    Dec 20, 1995
  • Appl. No.:
    8/575484
  • Inventors:
    George R. Brandes - Southbury CT
    Charles P. Beetz - New Milford CT
    Xueping Xu - Danbury CT
    Swayambu V. Ramani - San Jose CA
    Ronald S. Besser - Sunnyvale CA
  • Assignee:
    Advanced Technology Materials, Inc. - Danbury CT
    Silicon Video Corporation - San Jose CA
  • International Classification:
    H01L 310312
  • US Classification:
    257 77
  • Abstract:
    Integrated circuits, including field emission devices, have a resistor element of amorphous Si. sub. x C. sub. 1-x wherein 0
  • Electron-Emitting Device Having Multi-Layer Resistor

    view source
  • US Patent:
    60139862, Jan 11, 2000
  • Filed:
    Jun 30, 1997
  • Appl. No.:
    8/884702
  • Inventors:
    N. Johan Knall - Sunnyvale CA
    Duane A. Haven - Umpqua OR
    Swayambu Ramani - San Jose CA
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    H01J 6304
  • US Classification:
    3151693
  • Abstract:
    An electron-emitting device employs a multi-layer resistor (46). A lower layer (48) of the resistor overlies an emitter electrode (42). A set of electron-emissive elements (54) overlie an upper layer (50) of the resistor. Each resistive layer extends continuously from a location below each electron-emissive element to a location below each other electron-emissive element. The two resistive layers are of different chemical composition. The upper resistive layer is typically formed with cermet. The lower resistive layer is typically formed with a silicon-carbon compound.
  • Integrated Circuit Devices And Methods Employing Amorphous Silicon Carbide Resistor Materials

    view source
  • US Patent:
    62682296, Jul 31, 2001
  • Filed:
    Dec 14, 1999
  • Appl. No.:
    9/461693
  • Inventors:
    George R. Brandes - Southbury CT
    Charles P. Beetz - New Milford CT
    Xueping Xu - Danbury CT
    Swayambu V. Ramani - San Jose CA
    Ronald S. Besser - Sunnyvale CA
  • Assignee:
    Advanced Technology Materials, Inc. - Danbury CT
    Silicon Video Corporation - San Jose CA
  • International Classification:
    H01L 2100
  • US Classification:
    438 20
  • Abstract:
    Integrated circuits, including field emission devices, have a resistor element of amorphous Si. sub. x C. sub. 1-x wherein 0
  • Low-Stress And Low-Sensitivity Metal Film

    view source
  • US Patent:
    60842822, Jul 4, 2000
  • Filed:
    Apr 1, 1997
  • Appl. No.:
    8/839757
  • Inventors:
    Swayambu Ramani - San Jose CA
  • Assignee:
    Candescent Technologies Corporation - San Jose CA
  • International Classification:
    H01L 2978
  • US Classification:
    257443
  • Abstract:
    A thin-film coupled to a substrate includes a first layer and a second layer. Both layers are made of the same material, which is either a transition or a refractory metal. The first layer is doped by nitrogen and the second layer is not. The thin-film has lower stress level than a film made of the same material and having similar thickness as the thin-film, but without doping the film by nitrogen. Also, the thin-film has a lower sheet resistance than a film made of the same material, having similar thickness as the thin-film, and with similar atom percentage of nitrogen as the first layer. In one embodiment, the thin-film is used in a flat panel display.

Youtube

Mara Vairi Ramani - Vasantham - Bombay S Jaya...

Smt.Bombay S Jayashree's " Mara Vairi Ramani " Song, Composition of Th...

  • Duration:
    4m 49s

Bhakta Prahlada Movie Extraordinary Scene | S...

Bhakta Prahlada Telugu Movie Starring Rojaramani , S. V. Ranga Rao ,An...

  • Duration:
    5m 56s

Serene Moods I Audio Jukebox I Carnatic I Ins...

Dr N Ramani is a disciple of flute maestro T R Mahalingam. He imbibed ...

  • Duration:
    1h 3m 55s

Dattachala kshetram Janu with Ramani

Hi friends here is my new video...hope you liked my videos... please s...

  • Duration:
    34m 47s

500 years old ancient Balaji temple in Hydera...

Hi friends here is my new video...hope you liked my videos... please s...

  • Duration:
    15m 36s

swayambu shambhulingeswar... #vairalshort #m...

  • Duration:
    30s

Get Report for Swayambu V Ramani from Morgan Hill, CA, age ~82
Control profile