Suryaprakash Ganti

US Patent:

6377658, Apr 23, 2002

Filed:

Jul 27, 2001

Appl. No.:

09/682149

Inventors:

Mark Ernest Vermilyea - Niskayuna NY
Subhasish Roychoudhury - Albany NY
Daniel John Noonan - Middle Grove NY
Vivek Bhatt - Wauwatosa WI
Liangfeng Xu - Irving TX
Suryaprakash Ganti - Guilderland NY

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01J 3510

US Classification:

378131, 378132

Abstract:

The present invention provides, in one embodiment, a bearing assembly consisting of a rotatable shaft and a stator coaxially aligned. The stator has at least one circumferential protrusion that contains respective segments that extend radially from the stator. Each of the respective segments contains at least one capture cavity and has a main cavity disposed between each of the respective segments so as to house a thermal shunt. A plurality of roller bearings are also disposed radially between the rotatable shaft and the stator. In addition, at least one viscoseal is disposed on the rotatable shaft.

US Patent:

6636583, Oct 21, 2003

Filed:

Mar 4, 2002

Appl. No.:

09/683926

Inventors:

Paul Michael Ratzmann - Germantown WI
Suryaprakash Ganti - Guilderland NY
Mark Ernest Vermilyea - Niskayuna NY
James Edward Simpson - Schenectady NY

Assignee:

GE Medical Systems Global Technology Co., LLC - Waukesha WI

International Classification:

H01J 3510

US Classification:

378133, 378141, 378142

Abstract:

An x-ray tube is provided including an anode mounted to a rotatable shaft positioned within a center bore of a stem element, a bearing assembly positioned between the rotatable shaft and the stem element, and at least one liquid metal shunt in thermal communication with both the rotatable shaft and the stem element, located adjacent to the anode between the anode and the bearing assembly, and directing heat generated at the anode away from the bearing assembly by allowing heat to flow from the rotatable shaft into the stem element prior to heat reaching the bearing assembly.

US Patent:

6988826, Jan 24, 2006

Filed:

May 17, 2004

Appl. No.:

10/847180

Inventors:

Anis Zribi - Rexford NY, US
Azar Alizadeh - Wilton NY, US
Suryaprakash Ganti - Clifton Park NY, US
Juan Antonio Sabate - Gansevoort NY, US
Loucas Tsakalakos - Niskayuna NY, US
Kenneth Roger Conway - Clifton Park NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

G01K 17/00
G01N 25/00

US Classification:

374 31, 374 10, 374 29, 436147, 422 51

Abstract:

The present invention provides a nano-calorimeter device operable for measuring and characterizing the thermodynamic and other physical properties of materials that are confined to essentially nano-scale dimensions. The nano-calorimeter device including a thin film membrane having a first surface and a second surface. The nano-calorimeter device also including a frame structure disposed adjacent to and in thermal contact with the first surface of the thin film membrane, the frame structure defining a plurality of hollow cells adjacent to and in thermal contact with the first surface of the thin film membrane. The nano-calorimeter device further including one or more micro-heating elements disposed adjacent to and in thermal contact with the second surface of the thin film membrane, the location of the one or more micro-heating elements disposed adjacent to the second surface of the thin film membrane substantially corresponding to the location of the plurality of hollow cells defined adjacent to the first surface of the thin film membrane.

US Patent:

7122827, Oct 17, 2006

Filed:

Oct 15, 2003

Appl. No.:

10/686136

Inventors:

Azar Alizadeh - Wilton NY, US
Pradeep Sharma - Saratoga Springs NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Suryaprakash Ganti - Guilderland NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Kenneth Roger Conway - Clifton Park NY, US
Peter Micah Sandvik - Guilderland NY, US
Loucas Tsakalakos - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01L 29/06

US Classification:

257 17, 257 14, 257 22

Abstract:

The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.

US Patent:

7534640, May 19, 2009

Filed:

Jul 21, 2006

Appl. No.:

11/491047

Inventors:

Teruo Sasagawa - Los Gatos CA, US
Clarence Chui - San Mateo CA, US
Manish Kothari - Cupertino CA, US
SuryaPrakash Ganti - Los Altos CA, US
Jeffrey B. Sampsell - San Jose CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

H01L 21/00
H01L 29/82

US Classification:

438 50, 438 52, 257254, 257415

Abstract:

A microelectromechanical systems device having support structures formed of sacrificial material that is selectively diffused with a dopant material or formed of a selectively oxidized metal sacrificial material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a diffused or oxidized sacrificial material.

US Patent:

7566940, Jul 28, 2009

Filed:

Jul 21, 2006

Appl. No.:

11/490880

Inventors:

Teruo Sasagawa - Los Gatos CA, US
SuryaPrakash Ganti - Sunnyvale CA, US
Mark W. Miles - San Francisco CA, US
Clarence Chui - San Mateo CA, US
Manish Kothari - Cupertino CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

H01L 29/82

US Classification:

257419, 257415, 257414, 257E21125, 257E13033, 438 50, 438 48

Abstract:

Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

US Patent:

7679812, Mar 16, 2010

Filed:

Jul 21, 2006

Appl. No.:

11/491389

Inventors:

Teruo Sasagawa - Los Gatos CA, US
Clarence Chui - San Mateo CA, US
Manish Kothari - Cupertino CA, US
SuryaPrakash Ganti - Los Altos CA, US
Jeffrey B. Sampsell - San Jose CA, US
Chun-Ming Wang - Fremont CA, US

Assignee:

Qualcomm Mems Technologies Inc. - San Diego CA

International Classification:

G02B 26/00
G02B 26/08

US Classification:

359291, 3592231, 359237

Abstract:

A microelectromechanical systems device having support structures formed of sacrificial material surrounded by a protective material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a sacrificial material.

US Patent:

7706042, Apr 27, 2010

Filed:

Dec 20, 2006

Appl. No.:

11/613922

Inventors:

Wonsuk Chung - San Jose CA, US
SuryaPrakash Ganti - Los Altos CA, US
Stephen Zee - San Jose CA, US

Assignee:

QUALCOMM MEMS Technologies, Inc. - San Diego CA

International Classification:

G02B 26/00

US Classification:

359224, 359292, 359295, 359298

Abstract:

A microelectromechanical systems device having an electrical interconnect connected to at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a movable layer of the device. A thin film, particularly formed of molybdenum, is provided underneath the electrical interconnect. The movable layer preferably comprises aluminum.