The present invention describes an interposer which improves the thermal performance of a semiconductor device. The interposer may be situated between a substrate and a board. The interposer is attached to two layers of solder balls. The first layer of solder balls electrically and mechanically connects the interposer to the substrate. The second layer of solder balls electrically and mechanically connects the interposer to the board. In one aspect, the coefficient of thermal expansion (CTE) of the interposer may be flexibly selected to reduce thermal strain-induced stress for either or both layers of solder balls resulting from thermal performance differences between the substrate and the interposer or the interposer and the board. In another aspect, the CTE of the interposer may be reduced to allow a lower CTE for the substrate, which in turn may reduce thermal strain-induced stress for solder balls between the substrate and a die attached to the substrate. Advantageously, the improved thermal performance of the present invention may allow larger substrates, larger dies, larger solder ball arrays, reduced solder ball pitches and pin counts well above conventional levels without compromising semiconductor device reliability.
Non-Isothermal Electromigration Testing Of Microelectronic Packaging Interconnects
Senol Pekin - San Jose CA Sunil A. Patel - Los Altos CA
Assignee:
LSI Logic Corporation - Milpitas CA
International Classification:
G01R 3126
US Classification:
324719, 324537, 324717, 3241581
Abstract:
A method for measuring electromigration includes the steps of measuring a corresponding voltage increase across an interconnect as a function of time for a plurality of nonzero heating rates and calculating an interconnect integrity from the voltage increase.
Maniam Alagaratnam - Cupertino CA Kishor V. Desai - Fremont CA Sunil A. Patel - Los Altos CA
Assignee:
LSI Logic Corporation - Milpitas CA
International Classification:
H05K 334
US Classification:
29840, 29739, 29825, 29832, 22818021, 22818022
Abstract:
The present invention describes an interposer which improves the thermal performance of a semiconductor device. The interposer may be situated between a substrate and a board. The interposer is attached to two layers of solder balls. The first layer of solder balls electrically and mechanically connects the interposer to the substrate. The second layer of solder balls electrically and mechanically connects the interposer to the board. In one aspect, the coefficient of thermal expansion (CTE) of the interposer may be flexibly selected to reduce thermal strain-induced stress for either or both layers of solder balls resulting from thermal performance differences between the substrate and the interposer or the interposer and the board. In another aspect, the CTE of the interposer may be reduced to allow a lower CTE for the substrate, which in turn may reduce thermal strain-induced stress for solder balls between the substrate and a die attached to the substrate. Advantageously, the improved thermal performance of the present invention may allow larger substrates, larger dies, larger solder ball arrays, reduced solder ball pitches and pin counts well above conventional levels without compromising semiconductor device reliability.
Apparatus And Method For Improving Ball Joints In Semiconductor Packages
Sunil A. Patel - Los Altos CA Chok J. Chia - Cupertino CA Kishor V. Desai - Fremont CA
Assignee:
LSI Logic Corporation - Milpitas CA
International Classification:
H01L 2144
US Classification:
438614
Abstract:
Provided is an apparatus and method for modifying the manufacture of chip carrier bond pads to increase the quality and reliability of semiconductor packages and ball joints in particular. This is accomplished by minimizing the corrosion of the barrier metal layer on the functional bond pads during gold deposition with the use of sacrificial pads electrically connected with the functional bond pads. According to one embodiment of the invention, a semiconductor package has copper conductive pads on a substrate that are exposed through a dielectric. Both functional and sacrificial (nonfunctional) copper conductive pads are provided. A barrier metal layer composed of nickel is electrolessly plated onto these conductive pads, and a bond metal layer of gold is deposited onto the nickel using electroless, generally immersion, gold plating. The surface area of the nickel on the sacrificial pads is less than that on the functional pads, and the nickel on the sacrificial pads corrodes first during electroless gold deposition. Without nickel corrosion on the functional bond pad, gold can more uniformly be deposited on the surface of the nickel layer.
Process For Manufacturing A Semiconductor Device Having A Stiffener Member
Ramaswamy Ranganathan - Cupertino CA Sunil A. Patel - Santa Clara CA
Assignee:
LSI Logic Corporation - Milpitas CA
International Classification:
H01L 2152 H01L 2158 H01L 2160
US Classification:
438125
Abstract:
The subject method comprises providing a semiconductor package and a semiconductor package substrate having respective first and second major sides. A stiffener member, which is attachable to the semiconductor package substrate, is employed for purposes of minimizing package warpage. The stiffener member is attached to the semiconductor package substrate to provide the requisite support for the semiconductor package substrate during the assembly process and thereby counteract the sources of the package warpage problem. A protective outer layer can be optionally added to the subject system.
Hematology Oncology Associates Of Boca Raton 9970 Central Park Blvd N STE 304, Boca Raton, FL 33428 561 482-6611 (phone), 561 482-3056 (fax)
Education:
Medical School Baroda Medical College, Gujarat, India Graduated: 1979
Procedures:
Bone Marrow Biopsy Chemotherapy
Conditions:
Hemolytic Anemia Iron Deficiency Anemia Leukemia Multiple Myeloma Anemia
Languages:
English
Description:
Dr. Patel graduated from the Baroda Medical College, Gujarat, India in 1979. He works in Boca Raton, FL and specializes in Hematology/Oncology. Dr. Patel is affiliated with Boca Raton Regional Hospital, Delray Medical Center and West Boca Medical Center.
Dr. Patel graduated from the B J Med Coll, Gujarat Univ, Ahmedabad, Gujarat, India in 1981. He works in Olympia Fields, IL and specializes in Internal Medicine. Dr. Patel is affiliated with Franciscan Saint James Health - Olympia Fields.
Male Infertility Prostatitis Benign Prostatic Hypertrophy Bladder Cancer Calculus of the Urinary System
Languages:
English Spanish
Description:
Dr. Patel graduated from the UMDNJ New Jersey Medical School at Newark in 1998. He works in Fairfax, VA and specializes in Urology. Dr. Patel is affiliated with Inova Fairfax Medical Campus and Reston Hospital Center.
Benign Polyps of the Colon Cholelethiasis or Cholecystitis Cirrhosis Constipation Diverticulitis
Languages:
Chinese English French Spanish
Description:
Dr. Patel graduated from the Univ of Bristol, the Med Sch, Bristol (352 02 Prior 1/71) in 1986. He works in Staten Island, NY and 1 other location and specializes in Gastroenterology. Dr. Patel is affiliated with Richmond University Medical Center, Staten Island University Hospital North and Staten Island University Hospital South Campus.
Cardiac Consultants PC 2112 Harrisburg Pike STE 100, Lancaster, PA 17601 717 299-5000 (phone), 717 431-1205 (fax)
Education:
Medical School B J Med Coll, Gujarat Univ, Ahmedabad, Gujarat, India Graduated: 1992
Procedures:
Angioplasty Cardiac Catheterization Cardiac Stress Test Cardioversion Continuous EKG Echocardiogram Electrocardiogram (EKG or ECG) Pacemaker and Defibrillator Procedures
Conditions:
Angina Pectoris Aortic Valvular Disease Atrial Fibrillation and Atrial Flutter Cardiomyopathy Congenital Anomalies of the Heart
Languages:
English Spanish
Description:
Dr. Patel graduated from the B J Med Coll, Gujarat Univ, Ahmedabad, Gujarat, India in 1992. He works in Lancaster, PA and specializes in Cardiovascular Disease. Dr. Patel is affiliated with Heart Of Lancaster Regional Medical Center, Lancaster General Hospital and Lancaster Regional Medical Center.
Erie County Medical Center Transplant 462 Grider St FL 10, Buffalo, NY 14215 716 898-5001 (phone), 716 961-6048 (fax)
Education:
Medical School B.j. Med Coll, Poona Univ, Pune, Maharashtra, India Graduated: 1994
Procedures:
Kidney Transplant
Conditions:
Chronic Renal Disease
Languages:
English Spanish
Description:
Dr. Patel graduated from the B.j. Med Coll, Poona Univ, Pune, Maharashtra, India in 1994. He works in Buffalo, NY and specializes in Transplant Surgery. Dr. Patel is affiliated with Erie County Medical Center.
Dr. Patel graduated from the UMDNJ New Jersey Medical School at Newark in 2001. He works in Rockford, IL and specializes in Gastroenterology. Dr. Patel is affiliated with OSF Saint Anthony Medical Center and Swedish American Hospital.
Dr. Patel graduated from the N H L Municipal Med Coll, Gujarat Univ, Ahmedabad, Gujarat, India in 1982. He works in Fontana, CA and specializes in Pediatrics and Adolescent Medicine. Dr. Patel is affiliated with Community Hospital Of San Bernardino and St Bernardine Medical Center.
News
OncoMed Pharmaceuticals to Present at the 9th Annual JMP Securities ...
47% , a clinical-stage company developing novel therapeutics that target cancer stem cells (CSCs), or tumor-initiating cells, today announced that Sunil Patel, Chief Financial Officer, Senior Vice President, Corporate Development and Finance of On
Sunil Patel had never been published before he decided to go to Syria in August 2012 to become a war correspondent. Before his trip, the 25-year-old worked as a community-support officer for the London Police, lived with his mom and dad, and occasionally volunteered in Palestinian and Kurdish