IBM East Fishkill, NY Jul 2011 to Sep 2013 Advisory Engineer, Patterning Group. Lead development of advancedFREDERICK MEMORIAL HOSPITAL Frederick, MD 2010 to 2011 BuyerWORLD FINANCIAL GROUP
2008 to 2010 Account ManagerAXCELIS TECHNOLOGIES
2000 to 2007 Worldwide Applications Manager, Staff Applications EngineerPenn State
1996 to 2000 Field Applications ManagerFUSION SEMICONDUCTOR SYSTEMS
1988 to 1996 Senior Process Engineer/Field Applications ManagerFUSION SYSTEMS CORPORATION
1983 to 1988 R&D Engineer
Education:
St. Louis St. Louis, MO 1998 AssociatesSAS Institute Rockville, MD 1998University Consortium Austin, TX 1996 EducationPrinceton Princeton, NJ 1993 EducationRochester Institute of Technology Rochester, NY 1989 Process EngineeringDartmouth College 1974 Earth Science/Geology
Us Patents
Method Of Stripping Photoresist Using Re-Coating Material
Robert Mohondro - Sykesville MD Qingyuan Han - Columbia MD Ivan Berry - Ellicott City MD Mahmoud Dahimene - Sunnyvale CA Stuart Rounds - Frederick MD
Assignee:
Axcelis Technologies, Inc. - Beverly MA
International Classification:
G03F 736
US Classification:
430329, 430311, 430313, 430314, 438706, 216 67
Abstract:
A method of stripping a photoresist layer comprising applying a re-coating material on the photoresist layer which extends through and fills openings in a first layer on which the photoresist layer is disposed, ashing the stack comprised of the photoresist layer and the re-coating material, and removing such re-coating material as remains in the openings in the first layer after the ashing.
Ivan Berry - Ellicott City MD Stuart Rounds - Frederick MD John Hallock - Potomac MD Michael Owens - Austin TX Mahmoud Dahimene - Sunnyvale CA
Assignee:
Axcelis Technologies, Inc. - Beverly MA
International Classification:
H01L 2131
US Classification:
438906, 438759, 438963
Abstract:
A method of enabling the removal of fluorine containing residue from a semiconductor substrate comprising applying a gas and/or vapor to which the residue is reactive to the residue while the temperature of the substrate is at an elevated level with respect to ambient temperature and the residue is exposed to ultraviolet radiation, for a time period which is sufficient to effect at least one of volatilizing the residue or rendering the residue hydrophilic enough to be removable with deionized water.
Method For Photoresist Stripping Using Reverse Flow
John C. Matthews - Gaithersburg MD Robert D. Wooten - Rockville MD David S. Ferris - Washington DC Stuart N. Rounds - Germantown MD
Assignee:
Fusion Systems Corporation - Rockville MD
International Classification:
B08B 500
US Classification:
134 2
Abstract:
A method and apparatus for stripping a photoresist layer from a semiconductor wafer, wherein oxidizing gas is fed from the edge of the wafer to the center. The oxidizing gas may be directed so that it is incident on the heated wafer support platform before it is incident on the wafer.