Stephen L Palfrey

US Patent:

49115162, Mar 27, 1990

Filed:

Feb 27, 1989

Appl. No.:

7/316209

Inventors:

Stephen L. Palfrey - Metuchen NJ
Michael Ettenberg - Freehold NJ
Victor Korsun - Melrose Park PA

Assignee:

General Electric Company - Schenectady NY

International Classification:

G02B 634

US Classification:

350 9619

Abstract:

An optical fiber has a beveled end surface and a Bragg reflector grating formed on the end surface to form a single mode reflector for a semiconductor laser. A transmission fiber with a beveled end is fused to the beveled grating to form a continuous transmission line having an internal reflective grating.

US Patent:

51704056, Dec 8, 1992

Filed:

Feb 6, 1991

Appl. No.:

7/651076

Inventors:

John C. Connolly - Monmouth Junction NJ
Stephen L. Palfrey - Robbinsville NJ

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01S 319

US Classification:

372 48

Abstract:

A distributed feed back semiconductor diode laser comprising a substrate of n-type conductivity gallium arsenide having a channel along one surface thereof between its end surfaces. A first clad layer of n-type gallium aluminum arsenide is on the surface of the substrate. The first clad layer fills the channel and has a planar surface. A thin active layer of undoped aluminum gallium arsenide is on the first clad layer and a spacer layer of p-type conductivity aluminum gallium arsenide is on the active layer. A grating layer of p-type conductivity aluminum gallium arsenide is on the spacer layer and has a second order grating therein which extends across the channel in the substrate. A second clad layer of p-type conductivity aluminum gallium arsenide is on the grating layer and a cap layer of n-type conductivity gallium arsenide is on the second clad layer. A p-type conductivity contact region extends through the cap layer to the second contact layer and is over the channel in the substrate.

US Patent:

49583557, Sep 18, 1990

Filed:

Mar 29, 1989

Appl. No.:

7/330033

Inventors:

Gerard A. Alphonse - Princeton NJ
Stephen L. Palfrey - Metuchen NJ

Assignee:

RCA Inc. - Vaudreuil

International Classification:

H01S 319

US Classification:

372 45

Abstract:

There is provided a super luminescent light emitting device comprising a semiconductor body including a central region and two opposing end regions extending a predetermined distance from the end faces. A gain guiding linear strip of material adjacent to a side of the active region extends between the end faces and is inclined along its longitudinal axis at a predetermined angle relative to a direction normal to at least one of the end faces. An optical beam path of the device has an optical axis of symmetry extending between the end faces parallel to the longitudinal axis of the strip. The beam path has end lateral boundaries at each of the end regions whose lateral carrier and optical confinement is determined by the gain guiding strip to allow light reflected at the end faces to be refracted out of the optical beam path. The device includes index guiding structure extending on opposite sides of the gain guiding strip over the central region of the device parallel to the longitudinal axis of the gain guiding strip. The index guiding structure determines the central lateral boundaries for the optical beam path to provide lateral carrier and optical confinement of the optical beam path at the central region.

Author:

Stephen M. Palfrey

ISBN #:

0896036391