Srinivas Gandikota from 2727 Monroe St, Santa Clara, CA 95051, age 58, Phone: 408 985-2819

Us Patents

Continuous, Non-Agglomerated Adhesion Of A Seed Layer To A Barrier Layer
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US Patent:

6627542, Sep 30, 2003
Filed:

Jun 27, 2000
Appl. No.:

09/604858
Inventors:

Srinivas Gandikota - Santa Clara CA
Rong Tao - San Jose CA
Liang-Yuh Chen - Foster City CA
Seshadri Ramaswami - Saratoga CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 2144
US Classification:

438654, 438687
Abstract:

A method and apparatus is provided for improving adherence of metal seed layers to barrier layers in electrochemical deposition techniques. The method includes depositing an adhesion layer continuously or semi-continuously without agglomeration onto a barrier layer prior to depositing a seed layer by controlling the substrate temperature, the chamber pressure, and/or the power delivered to a deposition chamber. Deposition of the adhesion layer prevents layer delamination which leads to agglomeration of the deposited layers and formation of voids in the high aspect ratio features.

Electro-Chemical Polishing Apparatus
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US Patent:

6723224, Apr 20, 2004
Filed:

Aug 1, 2001
Appl. No.:

09/920704
Inventors:

Joseph Yahalom - Haifa, IL
Srinivas Gandikota - Santa Clara CA
Christopher R. McGuirk - San Jose CA
Deenesh Padhi - San Jose CA
Assignee:

Applied Materials Inc. - Santa Clara CA
International Classification:

B23H 300
US Classification:

205668, 205670, 205640, 205671, 205672, 205650
Abstract:

Generally, a method and apparatus for electro-chemical polishing a metal layer disposed on a substrate is provided. In one embodiment, the electro-chemical polishing apparatus generally includes a substrate support having a plurality of contact members, a cathode and at least one nozzle. The nozzle is adapted to centrally dispose a polishing fluid on the substrate supported by the substrate support. The cathode is adapted to couple the polishing fluid to a negative terminal of a power source. A positive terminal of the power source is electrically coupled through the contact members to the conductive layer of the substrate. The nozzle creates a turbulent flow in the portion of the polishing fluid boundary layer proximate the center of the substrate which enhances the polishing rate at the center of the substrate.

Method And Apparatus For Improved Electroplating Fill Of An Aperture
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US Patent:

6797620, Sep 28, 2004
Filed:

Apr 16, 2002
Appl. No.:

10/124095
Inventors:

John S. Lewis - San Jose CA
Srinivas Gandikota - Santa Clara CA
Sivakami Ramanathan - Fremont CA
Girish Dixit - San Jose CA
Robin Cheung - Cupertino CA
Fusen Chen - Saratoga CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 2144
US Classification:

438687
Abstract:

A method and apparatus is provided for filling apertures formed in a substrate surface by depositing materials that selectively inhibit or limit the formation or growth of subsequent layers used to fill an aperture. In one aspect, a method is provided for processing a substrate including providing a substrate having a field and apertures formed therein, wherein the apertures each have a bottom and sidewalls, depositing a seed layer on the bottom and sidewalls of the apertures, depositing a growth-inhibiting layer on at least one of the field of the substrate or an upper portion of the sidewalls of the apertures, and depositing a conductive layer on the growth-inhibiting layer and the seed layer. Deposition of the growth-inhibiting layer improves fill of the aperture from the bottom of the aperture up to the field of the substrate.

Post Rinse To Improve Selective Deposition Of Electroless Cobalt On Copper For Ulsi Application
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US Patent:

6821909, Nov 23, 2004
Filed:

Oct 30, 2002
Appl. No.:

10/284855
Inventors:

Sivakami Ramanathan - Fremont CA
Deenesh Padhi - Santa Clara CA
Srinivas Gandikota - Santa Clara CA
Girish A. Dixit - San Jose CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

H01L 2131
US Classification:

438758, 438678, 438759
Abstract:

A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution. In another aspect, the method includes applying ultrasonic or megasonic energy to the substrate surface during the application of the acidic solution. In still another aspect, the method includes using the acidic solution to remove between about 100 and about 200 of the passivating material. In yet another aspect, the method includes cleaning the substrate surface with a first acidic solution prior to the deposition of the initiation layer.

Electroless Deposition Method Over Sub-Micron Apertures
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US Patent:

6824666, Nov 30, 2004
Filed:

Jan 28, 2002
Appl. No.:

10/059822
Inventors:

Srinivas Gandikota - Santa Clara CA
Chris R. McGuirk - San Jose CA
Deenesh Padhi - San Jose CA
Muhammad Atif Malik - Santa Clara CA
Sivakami Ramanathan - Fremont CA
Girish A. Dixit - San Jose CA
Robin Cheung - Cupertino CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C23C 2800
US Classification:

205183, 205147, 205184, 205185, 205187, 205224, 205225, 205227, 427 97, 427 98, 427 99, 427304, 427305, 427328, 427437, 427438, 428936
Abstract:

An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a âpatchâ of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer.

Method And Apparatus For Reducing Organic Depletion During Non-Processing Time Periods
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US Patent:

6878245, Apr 12, 2005
Filed:

Feb 27, 2002
Appl. No.:

10/085338
Inventors:

Srinivas Gandikota - Santa Clara CA, US
Chris R. McGuirk - San Jose CA, US
Deenesh Padhi - San Jose CA, US
Sivakami Ramanathan - Fremont CA, US
Muhammad Atif Malik - Santa Clara CA, US
Girish A. Dixit - San Jose CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

C25D017/00
C25D021/00
US Classification:

2042751, 204224 R, 204237, 205101, 205148
Abstract:

Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods.

Electroless Deposition Method
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US Patent:

6899816, May 31, 2005
Filed:

Apr 3, 2002
Appl. No.:

10/117711
Inventors:

Deenesh Padhi - San Jose CA, US
Joseph Yahalom - Emeryville CA, US
Sivakami Ramanathan - Fremont CA, US
Chris R. McGuirk - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Girish Dixit - San Jose CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

B44C001/22
B05D003/04
B05D003/10
US Classification:

216 52, 216 53, 427301, 427304, 427305
Abstract:

Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

Electroless Deposition Method
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US Patent:

6905622, Jun 14, 2005
Filed:

Apr 3, 2002
Appl. No.:

10/117712
Inventors:

Deenesh Padhi - San Jose CA, US
Joseph Yahalom - Emeryville CA, US
Sivakami Ramanathan - Fremont CA, US
Chris R. McGuirk - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Girish Dixit - San Jose CA, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

B44C001/22
B05D003/04
B05D003/10
US Classification:

216 52, 216 53, 427301, 427304, 427305
Abstract:

Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.