Shumin Wang

Author:

Shumin Wang

ISBN #:

7030030788

US Patent:

6347978, Feb 19, 2002

Filed:

Oct 22, 1999

Appl. No.:

09/425473

Inventors:

Mingming Fang - Naperville IL
Christopher C. Streinz - Smyrna Mills ME
Shumin Wang - Naperville IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

B24B 100

US Classification:

451 28, 451 60, 51307, 51308, 51309, 438693

Abstract:

A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a composition to the rigid disk comprising at least one hydroxylamine additive and colloidal silica to give a polished rigid disk.

US Patent:

6362104, Mar 26, 2002

Filed:

Feb 10, 2000

Appl. No.:

09/501221

Inventors:

Shumin Wang - Naperville IL
Brian L. Mueller - Aurora IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

H01L 21302

US Classification:

438692, 438693, 438694

Abstract:

A chemical mechanical polishing composition comprising an oxidizing agent and at least one solid catalyst, the composition being useful when combined with an abrasive or with an abrasive pad to remove multiple metal layers from a substrate.

US Patent:

6362106, Mar 26, 2002

Filed:

Sep 13, 2000

Appl. No.:

09/660847

Inventors:

Vlasta Brusic Kaufman - Geneva IL
Rodney C. Kistler - St. Charles IL
Shumin Wang - Naperville IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

H01L 21302

US Classification:

438692, 438693, 438754, 438694, 216 89

Abstract:

A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

US Patent:

6395693, May 28, 2002

Filed:

Sep 27, 1999

Appl. No.:

09/405249

Inventors:

Shumin Wang - Naperville IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

C11D 330

US Classification:

510175, 510176, 510178, 510432, 510433, 510434, 510435, 510436, 510477, 510488, 510499, 134 13

Abstract:

A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phosphonic acid, and water. The cleaning composition is useful in removing abrasive remnants as well as metal contaminants from the surface of a semiconductor wafer following chemical-mechanical polishing.

US Patent:

6432828, Aug 13, 2002

Filed:

Mar 18, 1998

Appl. No.:

09/040630

Inventors:

Vlasta Brusic Kaufman - Geneva IL
Rodney C. Kistler - St. Charles IL
Shumin Wang - Naperville IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

C09K 1300

US Classification:

438693, 438692, 51308, 51309, 106 3, 216 89, 252 791

Abstract:

A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

US Patent:

6435947, Aug 20, 2002

Filed:

Jan 22, 2001

Appl. No.:

09/766750

Inventors:

Brian L. Mueller - Chandler AZ
Shumin Wang - Naperville IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

B24B 100

US Classification:

451 41, 451526

Abstract:

A polishing pad comprising a polishing pad substrate and at least one solid catalyst, the polishing pad being useful to remove metal layers from a substrate.

US Patent:

6447371, Sep 10, 2002

Filed:

Mar 6, 2001

Appl. No.:

09/800009

Inventors:

Vlasta Brusic Kaufman - Geneva IL
Rodney C. Kistler - Los Gatos CA
Shumin Wang - Naperville IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

B24B 100

US Classification:

451 36, 451 41, 106 3, 438692

Abstract:

The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

US Patent:

6468137, Oct 22, 2002

Filed:

Sep 7, 2000

Appl. No.:

09/656665

Inventors:

Mingming Fang - Naperville IL
Shumin Wang - Naperville IL

Assignee:

Cabot Microelectronics Corporation - Aurora IL

International Classification:

B24B 100

US Classification:

451 41, 451 60, 438692, 216 88

Abstract:

A method for planarizing or polishing a substrate, particularly a memory or rigid disk, is provided. The method comprises abrading at least a portion of a surface of a substrate with a polishing system comprising (i) a polishing composition comprising a liquid carrier, at least one oxidized halide, and at least one amino acid, and (ii) a polishing pad and/or an abrasive.