Shintaro Yamada from Ridgewood, NJ, age 42

Name / Title

Company / Classification

Phones & Addresses

Shintaro Yamada
Director

KHMER COLLECTIVE, INC

18 Royal St, Lowell, MA 01851
29-21 21 Ave New York Ny 11105 Usa<Br/>29-21 21 Ave New York, Astoria, NY 11105

Us Patents

Water-Processable Photoresist Compositions
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US Patent:

6399273, Jun 4, 2002
Filed:

Aug 14, 2000
Appl. No.:

09/639382
Inventors:

Shintaro Yamada - Marlborough MA
Timo Rager - Wuerenlingen, CH
C. Grant Willson - Austin TX
Assignee:

Board of Regents, University of Texas System - Austin TX
International Classification:

G03F 7039
US Classification:

4302701, 430326, 430330, 430905, 430910, 430919
Abstract:

Water-processable positive-tone photoresists comprising a water-soluble polymer, wherein the polymer contains a heat-labile functional group that renders the polymer insoluble in water or an aqueous base upon heat treatment, and an acid-labile functional group that restores said water or aqueous base solubility to the polymer upon irradiation in the presence of a water-processable photoacid generator, are described. Also described are the methods of making such polymers and photoresists.

Polymers And Photoresist Compositions For Short Wavelength Imaging
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US Patent:

7132214, Nov 7, 2006
Filed:

Sep 8, 2001
Appl. No.:

09/948525
Inventors:

Gary N. Taylor - Northboro MA, US
Robert L. Brainard - Wayland MA, US
Shintaro Yamada - Marlborough MA, US
Assignee:

Shipley Company, L.L.C. - Marlborough MA
International Classification:

G03F 7/039
US Classification:

4302701
Abstract:

This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e. g. 157 nm.

Base Reactive Photoacid Generators And Photoresists Comprising Same
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US Patent:

20120129108, May 24, 2012
Filed:

Nov 15, 2011
Appl. No.:

13/296949
Inventors:

Emad AQAD - Northborough MA, US
Mingqi LI - Shrewsbury MA, US
Deyan WANG - Hudson MA, US
Cong LIU - Shrewsbury MA, US
Joon Seok OH - Natick MA, US
Shintaro YAMADA - Shrewsbury MA, US
Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA
International Classification:

G03F 7/20
C08G 75/00
C07C 309/19
US Classification:

430325, 560 14, 528360
Abstract:

This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.

Compositions Comprising Base-Reactive Component And Processes For Photolithography
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US Patent:

20120171626, Jul 5, 2012
Filed:

Dec 30, 2011
Appl. No.:

13/341067
Inventors:

Deyan WANG - Hudson MA, US
Shintaro Yamada - Shrewsbury MA, US
Cong Liu - Shrewsbury MA, US
Mingqi Li - Shrewsbury MA, US
Chunyi Wu - Shrewsbury MA, US
Doris Kang - Shrewsbury MA, US
Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA
International Classification:

G03F 7/20
US Classification:

430325, 430322
Abstract:

New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.

Photoacid Generator And Photoresist Comprising Same
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US Patent:

20130084525, Apr 4, 2013
Filed:

Sep 28, 2012
Appl. No.:

13/630456
Inventors:

Rohm and Haas Electronic Materials LLC - Marlborough MA, US
Mingqi Li - Shrewsbury MA, US
Shintaro Yamada - Shrewsbury MA, US
William Williams, III - Ipswich MA, US
Assignee:

ROHM AND HAAS ELECTRONIC MATERIALS LLC - Marlborough MA
International Classification:

C07C 309/65
C07C 311/09
C07D 497/18
C07D 313/08
C07D 327/04
G03F 7/027
C07D 493/18
US Classification:

4302701, 558 51, 562100, 549300, 549268, 549 31
Abstract:

A photoacid generator compound has the formula (I):wherein A is a substituted or unsubstituted, monocyclic, polycyclic, or fused polycyclic Cor greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing, Ris H, a single bond, or a substituted or unsubstituted Calkyl group, wherein when Ris a single bond, Ris covalently bonded to a carbon atom of A, each Ris independently H, F, or Cfluoroalkyl, wherein at least one Ris not hydrogen, L is a linking group comprising a sulfonate group, a sulfonamide group, or a Csulfonate or sulfonamide-containing group, Z is an organic or inorganic cation, p is an integer of 0 to 10, k is 1 or 2, m is an integer of 0 or greater, and n is an integer of 1 or greater. A precursor compound to the photoacid generator, a photoresist composition including the photoacid generator, and a substrate coated with the photoresist composition, are also disclosed.

Photoresist Composition
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US Patent:

20130137038, May 30, 2013
Filed:

May 29, 2012
Appl. No.:

13/482595
Inventors:

Mingqi Li - Shrewsbury MA, US
Amad Aqad - Northborough MA, US
Cong Liu - Shrewsbury MA, US
Ching-Lung Chen - Miaoli, TW
Shintaro Yamada - Shrewsbury MA, US
Joseph Mattia - Framingham MA, US
Assignee:

Dow Global Technologies LLC - Midland MI
Rohm and Haas Electronic Materials LLC - Marlborough MA
International Classification:

G03F 7/004
US Classification:

4302851
Abstract:

A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula:wherein each Ris independently a substituted or unsubstituted Calkyl group, Caryl group, Caralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic Caryl group, each Ris independently H, F, a linear or branched Cfluoroalkyl or a linear or branched heteroatom-containing Cfluoroalkyl, L is a Clinking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, Cor greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.

Photoresist Underlayer Compositions And Patterning Methods
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US Patent:

20220197141, Jun 23, 2022
Filed:

Dec 17, 2020
Appl. No.:

17/124743
Inventors:

- Marlborough MA, US
Michael Finch - Chelmsford MA, US
Paul J. LaBeaume - Auburn MA, US
Shintaro Yamada - Shrewsbury MA, US
Suzanne M. Coley - Mansfield MA, US
International Classification:

G03F 7/11
C08F 12/08
C08F 12/22
C09D 125/14
C09D 125/18
C23C 16/02
C23C 16/20
C23C 16/455
G03F 7/16
H01L 21/027
Abstract:

A method of forming a pattern on a substrate, the method including:

Photoresist Underlayer Compositions And Patterning Methods
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US Patent:

20220197142, Jun 23, 2022
Filed:

Dec 17, 2020
Appl. No.:

17/124751
Inventors:

- Marlborough MA, US
Michael Finch - Chelmsford MA, US
Paul J. LaBeaume - Auburn MA, US
Shintaro Yamada - Shrewsbury MA, US
Suzanne M. Coley - Mansfield MA, US
International Classification:

G03F 7/11
C08G 65/40
C09D 171/12
C08G 73/06
C09D 179/04
C08F 220/18
C09D 133/10
C23C 16/02
C23C 16/20
C23C 16/455
G03F 7/16
G03F 7/42
H01L 21/027
Abstract:

A method of forming a pattern on a substrate, the method including: