Sergey Eduar Borodyansky

US Patent:

6635869, Oct 21, 2003

Filed:

Feb 26, 2001

Appl. No.:

09/792990

Inventors:

Dimitri Klyachko - Cupertino CA
Sergey Borodyansky - Cupertino CA
Leonid Vasilyev - Sunnyvale CA

Assignee:

FEI Company - Hillsboro OR

International Classification:

H01J 3705

US Classification:

250305, 250306, 250307, 250310

Abstract:

An electron analyzer and its method of operation useful for determining the intensity of a peak in the electron spectrum. The invention is particularly useful for determining the intensity of an Auger peak of a given element in the sample being probed and associating the intensity with a concentration of that element in the sample. The electron spectrum is measured above and below the anticipated peak. The data near the peak are not used. The remaining data above the peak and below the peak are fit to respective equations linearly dependent upon the measurement energy. The difference of the two equations at the value of the peak energy is associated with the peak intensity and the elemental concentration. The invention can be applied to measuring nitrogen concentration in a thin protective film of amorphous carbon or diamond.

US Patent:

6399944, Jun 4, 2002

Filed:

Jul 9, 1999

Appl. No.:

09/350701

Inventors:

Leonid A. Vasilyev - Sunnyvale CA
Robert Linder - Santa Clara CA
Sergey Borodyansky - Sunnyvale CA
Dmitri Klyachko - Cupertino CA

Assignee:

FEI Company - Hillsboro OR

International Classification:

H01J 37073

US Classification:

250310, 250305, 250307

Abstract:

A method and apparatus for measuring the thickness of a thin coating, having a thickness on the order of 1 to 10 nm, of one material formed over a substrate of another material of significantly different atomic number, for example, a carbon coating on a ferromagnetic substrate. A primary radiation source, for example, of electrons or X-ray, creates low-energy secondary electrons in the substrate. The intensity of inelastically scattered electrons generally increases with film thickness. The secondary electron spectrum measured for a test sample is compared with the spectra for a plurality of similar reference samples of the same set of compositions, and a test thickness is thereby determined. The method may be practice on conventional electron spectrometers with the addition of some programmed analysis. Various techniques are available for extracting the data and comparing the test and reference data.

US Patent:

20160042105, Feb 11, 2016

Filed:

Oct 22, 2015

Appl. No.:

14/919954

Inventors:

- Milpitas CA, US
Nuriel Amir - St. Yokne'am, IL
Mark Ghinovker - Yoqneam Ilit, IL
Tal Shusterman - Haifa, IL
David Gready - Tel Aviv, IL
Sergey Borodyansky - Sunnyvale CA, US

International Classification:

G06F 17/50

Abstract:

Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification needs. Systems comprise the following elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production processes, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the target data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology conditions with respect to the simulated target measurements.