Scott L Redinger

US Patent:

6836350, Dec 28, 2004

Filed:

Mar 5, 2004

Appl. No.:

10/793971

Inventors:

Prashant Singh - Eden Prairie MN
Helga Foulk - Ambler PA
Scott Redinger - Breinigsville PA
Todd Tanji - Eagan MN
Keith Maile - New Brighton MN
John Stronczer - Minneapolis MN

Assignee:

T-Networks, Inc. - Allentown PA
AMCC - San Diego CA

International Classification:

G02F 101

US Classification:

359240, 359245, 359246, 359248, 438718

Abstract:

Drive circuitry to provide a DC bias voltage and a high frequency modulation current to an electroabsorption modulator (EAM), including a high frequency modulation current source, a coupling capacitor, and a first DC lead. The drive circuitry may include termination circuitry. One lead of the high frequency modulation current source is electrically coupled to the first semiconductor type contact of the EAM and the other lead of the high frequency modulation current source is electrically coupled to an AC ground. The coupling capacitor includes a first electrode electrically coupled to the second semiconductor type contact of the EAM, a second electrode electrically coupled to the AC ground, and a dielectric layer between the electrodes. The first DC lead is electrically coupled to the EAM-side capacitor electrode and configured to be coupled to a first DC potential.

US Patent:

20030090774, May 15, 2003

Filed:

Oct 22, 2002

Appl. No.:

10/277290

Inventors:

Prashant Singh - Eden Prairie MN, US
Helga Foulk - Ambler PA, US
Scott Redinger - Breinigsville PA, US
Todd Tanji - Eagan MN, US
Keith Maile - New Brighton MN, US
John Stronczer - Minneapolis MN, US

International Classification:

G02F001/03
G02F001/07

US Classification:

359/248000

Abstract:

Drive circuitry to provide a DC bias voltage and a high frequency modulation current to an electroabsorption modulator (EAM), including a high frequency modulation current source, a coupling capacitor, and a first DC lead. The drive circuitry may include termination circuitry. One lead of the high frequency modulation current source is electrically coupled to the first semiconductor type contact of the EAM and the other lead of the high frequency modulation current source is electrically coupled to an AC ground. The coupling capacitor includes a first electrode electrically coupled to the second semiconductor type contact of the EAM, a second electrode electrically coupled to the AC ground, and a dielectric layer between the electrodes. The first DC lead is electrically coupled to the EAM-side capacitor electrode and configured to be coupled to a first DC potential.