An improved method of manufacturing active matrix displays with ESD protection through final assembly and in process testing and repair capabilities. At least a first set of shorting bars is formed adjacent the row and column matrix. The shorting bars are respectively coupled to one another in series to allow testing of the matrix elements. A first shorting bar is coupled to the row lines and a second shorting bar is coupled to the column lines. The shorting bars can remain coupled to the matrix through final assembly to provide ESD protection and final assembly and testing capability.
Scott Holmberg - Escondido CA, US Olivier Postel - Cupertino CA, US
PlasmaMed, LLC - Cupertino CA
C23F 1/00 H01L 21/306
156345100, 438706000, 216067000
A dry etcher includes a process chamber configured to process a substrate therein using plasma; a substrate supporter to support the substrate; an inner chamber wall maintained at a high temperature and at least one magnetron provided in close proximity to the substrate to generate a local uniform high density plasma. The outer chamber wall provides vacuum integrity and is kept at low enough temperature to maintain vacuum integrity and to ensure safe operation of the machine. The dry etcher further includes a radio-frequency (RF) power source coupled to the substrate supporter, wherein the plasma is generated by the RF power applied to the substrate supporter and a magnetic field generated by the magnetron.
High Temperature Amorphous Memory Device For An Electrically Alterable Read-Only Memory
This disclosure relates to an electrically alterable amorphous memory device which can be switched from a high resistance state to a low resistance state, which device has a stable voltage threshold that is temperature insensitive throughout the lifetime of the device. The memory device is formed of a graded structure having at least three regions or layers of amorphous material selected from the tellurium based chalcogenide class of materials, particularly tellurium-germanium systems. The center or middle region is formed of the eutectic material which is in the range of 15 to 17 percent germanium although this range may vary from 10 to 25 percent. The top region or the region closest to the positive electrode is primarily tellurium with from 0 to 10 percent germanium. The bottom region or region closest to the negative electrode is formed of a material which has the highest glassy state transition temperature which material is approximately 33 percent germanium although this may vary from 25 to 45 percent germanium.
Method Of Manufacturing Thin Film Transistors And Transistors Made Thereby
Scott H. Holmberg - San Ramon CA Richard A. Flasck - San Ramon CA
Alphasil, Inc. - Fremont CA
An improved method of manufacturing thin film transistors. A gate metal is patterned to form a gate electrode and a drain, gate and source contact pad for the transistor. To reduce shorts and capacitance between the gate and the source or the drain, a dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.
Programmable Cell For Use In Programmable Electronic Arrays
Scott H. Holmberg - Milford MI Richard A. Flasck - Rochester MI
Energy Conversion Devices, Inc. - Troy MI
An improved programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 10 volts or less, a current of 25 milliamps or less, for 100 microseconds or less. The cells in the conductive state have a resistance of 100 ohms or less. The cells have a maximum permittable processing temperature of 400. degree. centigrade or more and a storage temperature of 175. degree. centigrade or more. The cells are formed from doped silicon alloys including at least hydrogen and/or fluorine and contain from about 0.
Scott H. Holmberg - Pleasanton CA Quy Vu - Fremont CA
H01L 21786 G02F 11343
An improved method of manufacturing active matrix displays with ESD protection through final assembly and in process testing and repair capabilities. At least a first set of shorting bars is formed adjacent the row and column matrix. The shorting bars are respectively coupled to one another in series to allow testing of the matrix elements. A first shorting bar is coupled to the odd row lines, a second shorting bar is coupled to the even row lines, a third shorting bar is coupled to the odd column lines and a fourth shorting bar is coupled to the even column lines. The shorting bars can remain coupled to the matrix through final assembly to provide ESD protection and final assembly and testing capability.
Method Of Manufacturing Flat Panel Backplanes Including Redundant Gate Lines And Displays Made Thereby
Flat panel displays are provided with overlying interconnected and hence redundant bus lines to reduce fatal defects. The redundant, generally row lines are interconnected at least at two locations on a line and can be connected at each pixel to further reduce defects. The redundant row or gate line is formed by an overlying light shield line which preferably is of low resistivity and enhances the operation of the displays. The display can include subdivided subpixels and one defective subpixel is generally an acceptable non-fatal display defect, since the rest of the subpixels are still operative. The subpixels can be formed with common or redundant column bus lines.
Method Of Manufacturing Flat Panel Backplanes Including Electrostatic Discharge Prevention And Displays Made Thereby
Flat panel displays are provided including protection from electrostatic discharge (ESD) during manufacture and thereafter. At least one ESD guard ring is provided to protect the active elements of the display from the potential discharge between the row and column lines. An internal ESD guard ring is coupled to the row and column lines via shunt transistors. An external ESD guard ring is coupled to the row and column lines via a resistance. Both of the guard rings can be provided; however, the external guard ring is removed prior to completion of the display.
Name / Title
Company / Classification
Phones & Addresses
Scott Holmberg President, Owner
DONCON, INC Filling Stations Gas · General Auto Repair · Auto Repair
7731 Balboa Ave, San Diego, CA 92111 8110 Balboa Ave, San Diego, CA 92111 858 279-1010, 858 571-9784
Volt / Aerotek - Tempe, AZ Jul 2012 - Feb 2013
Tier I Technical Support
Newport Mesa Unified School District Jan 2003 - Jan 2008
City of Costa Mesa Jan 2001 - Jan 2003
After School Program Leader
Computer Training Academy 2010 - 2012
Certifications, Computer/Information Technology Administration and Management
California State University-Long Beach 2006 - 2008
+40 Units, Liberal Arts and Sciences/Liberal Studies
Orange Coast College 1988 - 2003
Transferred to CSULB with General Education, Liberal Arts and Sciences/Liberal Studies
Microsoft Windows 98 Windows Server 2003 Windows 7 Windows XP Professional Virtualization Desktop Support Network Administration Network Infrastructure VPN Windows Server 2008 Disaster Recovery DNS management RAID Router Configuration Active Directory Firewalls Computer Hardware Backup Solutions Wiring/Cabling TCP/IP IPX/SPX NAT RIP IGRP PPP L2TP WINS DHCP Management WSUS HTTP HTTPS FTP Ethernet Point to Point ISDN Twisted Pair Fiber Optics Coax Serial Communications Wireless Networking Switches Bridges Hubs Wireless Access Points Printers
featuring the installation of 80 bonfires floating on Providence's three rivers, is part of the first free, evening artistic summer HCV festival to help bring awareness to the disease. Scott Holmberg, MD, MPH, Chief of Epidemiology and Surveillance for Viral Hepatitis at the CDC, will be the guest of honor.
SOURCES: Scott Holmberg, M.D., M.P.H., chief, epidemiology and surveillance branch, division of viral hepatitis, U.S. Centers for Disease Control and Prevention; Eugene R. Schiff, M.D., Leonard Miller Professor of Medicine, director, Schiff Liver Institute/Center for Liver Diseases, University of Mi
"These data underscore the urgent need to address the health threat posed by chronic hepatitis B and C in the United States," said investigator Dr. Scott Holmberg, chief of the Epidemiology and Surveillance Branch in CDC's Division of Viral Hepatitis.