Volt / Aerotek - Tempe, AZ Jul 2012 - Feb 2013
Tier I Technical Support
Newport Mesa Unified School District Jan 2003 - Jan 2008
City of Costa Mesa Jan 2001 - Jan 2003
After School Program Leader
Computer Training Academy 2010 - 2012
Certifications, Computer/Information Technology Administration and Management
California State University-Long Beach 2006 - 2008
+40 Units, Liberal Arts and Sciences/Liberal Studies
Orange Coast College 1988 - 2003
Transferred to CSULB with General Education, Liberal Arts and Sciences/Liberal Studies
Microsoft Windows 98 Windows Server 2003 Windows 7 Windows XP Professional Virtualization Desktop Support Network Administration Network Infrastructure VPN Windows Server 2008 Disaster Recovery DNS management RAID Router Configuration Active Directory Firewalls Computer Hardware Backup Solutions Wiring/Cabling TCP/IP IPX/SPX NAT RIP IGRP PPP L2TP WINS DHCP Management WSUS HTTP HTTPS FTP Ethernet Point to Point ISDN Twisted Pair Fiber Optics Coax Serial Communications Wireless Networking Switches Bridges Hubs Wireless Access Points Printers
An improved method of manufacturing active matrix displays with ESD protection through final assembly and in process testing and repair capabilities. At least a first set of shorting bars is formed adjacent the row and column matrix. The shorting bars are respectively coupled to one another in series to allow testing of the matrix elements. A first shorting bar is coupled to the row lines and a second shorting bar is coupled to the column lines. The shorting bars can remain coupled to the matrix through final assembly to provide ESD protection and final assembly and testing capability.
Method Of Manufacturing Thin Film Transistors And Transistors Made Thereby
Scott H. Holmberg - San Ramon CA Richard A. Flasck - San Ramon CA
Alphasil Incorporated - Sunnyvale CA
H01L 2978 H01L 2702
An improved method of manufacturing thin film transistors. A gate metal is patterned to form a gate electrode and a drain, gate and source contact pad for the transistor. To reduce shorts and capacitance between the gate and the source or the drain, an intermetal dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.
Method Of Illuminating Flat Panel Displays To Provide Crt Appearing Displays
Richard A. Flasck - San Ramon CA Benny Irwin - San Jose CA Scott H. Holmberg - San Ramon CA
Alphasil, Inc. - Fremont CA
G02F 113 F21V 704 F21L 1900 F21P 100
LCD screen illumination is provided by a neon tube formed to fit closely adjacent the screen. A tube formed to fit around the periphery of the screen shielded from the viewer's eyes can be utilized to front light the screen. A serpentine shaped tube can be placed adjacent the back of the screen to back light the screen. The tube can be formed to have a size coextensive with the screen configuration and can have a light diffuser between the tube and the screen to provide uniform illumination. The tube can provide any desired color, an adjustable high maximum surface brightness, high electrical efficiency and a narrow profile.
Method Of Making An Active Matrix Display Incorporating An Improved Tft
Scott H. Holmberg - Pleasanton CA Rajesh Swaminathan - Santa Clara CA
Image Quest Technologies, Inc. - Fremont CA
H01L 2184 H01L 21265
Improved multilayer matrix line including inverted gate thin film matrix transistors to reduce defects in and enhance performance of matrix devices incorporating the transistors, including active matrix displays. The inverted gate line is formed in a multilayer metal structure deposited sequentially before patterning of a first bottom refractory layer, an aluminum layer and a second refractory layer for the gate structure. The aluminum layer is anodized adjacent the gate to prevent step coverage problems. A further improvement is provided when forming an active matrix display storage capacitor utilizing the multilayer gate structure.
Method Of Manufacturing Flat Panel Backplanes, Display Transistors And Displays Made Thereby
Scott H. Holmberg - Milford MI Richard A. Flasck - Rochester MI
Alphasil Incorporated - Fremont CA
An improved method of manufacturing active matrix display backplanes with thin film transistors thereon and a drive scheme therefor. A refractory metal covers the indium tin oxide (ITO) layer, patterned to form a gate electrode for the transistors and to protect the pixel pad ITO during formation of the transistors. To reduce shorts and capacitance between the gate and the source or the drain, an intermetal dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.
Aluminum-Refractory Metal Interconnect With Anodized Periphery
A metal interconnect structure for an integrated circuit with a layer of refractory metal over the structure to prevent formation of hillocks, thereby eliminating a hard anodization step. The refractory metal may be tantalum, titanium-tungsten alloys, hafnium, or other refractory metals which form insulating anodic oxides.
Scott H. Holmberg - Pleasanton CA Shan Zhu - Fremont CA
Image Quest Technologies, Inc. - Fremont CA
An improved planar color filter structure to reduce defects in the display devices incorporating the color filter structures, including active matrix displays. A color filter substrate has a thicker polyamide black matrix formed thereon and a transparent polyamide layer formed over the black matrix. The transparent layer is exposed through the black matrix and developed to remove the unexposed portions over the black matrix. The resulting surface is substantially planar and facilitates the forming of the remaining layers to form a substantially planar color filter structure.
Tft, Method Of Making And Matrix Displays Incorporating The Tft
Scott H. Holmberg - Pleasanton CA Ronald L. Huff - San Ramon CA
Hyundai Electronics America, Inc. - San Jose CA
Improved thin film transistors to reduce defects in the devices incorporating the transistors, including active matrix displays. A first improvement is accomplished by forming a dual insulator layer over the bottom metal layer, which can be the gate line and also the row line in an active matrix display. The first insulator layer is formed by anodizing the metal layer and the second insulator layer is deposited onto the first layer. The dual insulator structure layer can be reanodized to eliminate the effect of pinholes. A second improvement includes providing an interdigitated transistor structure to increase the channel width, minimize internal shorting and minimize the drain capacitance. The interdigitated structure includes at least one source or drain finger formed between at least two drain or source fingers, respectively. A shorted source finger can be disconnected to maintain an operative transistor.
Miriam Hospital physician advocates awareness, collaboration to combat ...
featuring the installation of 80 bonfires floating on Providence's three rivers, is part of the first free, evening artistic summer HCV festival to help bring awareness to the disease. Scott Holmberg, MD, MPH, Chief of Epidemiology and Surveillance for Viral Hepatitis at the CDC, will be the guest of honor.
SOURCES: Scott Holmberg, M.D., M.P.H., chief, epidemiology and surveillance branch, division of viral hepatitis, U.S. Centers for Disease Control and Prevention; Eugene R. Schiff, M.D., Leonard Miller Professor of Medicine, director, Schiff Liver Institute/Center for Liver Diseases, University of Mi
"These data underscore the urgent need to address the health threat posed by chronic hepatitis B and C in the United States," said investigator Dr. Scott Holmberg, chief of the Epidemiology and Surveillance Branch in CDC's Division of Viral Hepatitis.
Date: Feb 21, 2012
Chronic Hepatitis B and C Cohort Study (CHeCS...
With funding from the Viral Hepatitis Action Coalition, the Centers fo...