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Scott H Holmberg

Deceased

from Escondido, CA

Also known as:
  • Scott Holmberg
  • Scott Howard Holmberg
  • Michael Holmberg
3106 Las Palmas Ave, Escondido, CA 92025760 233-0789

Scott Holmberg Phones & Addresses

  • 3106 Las Palmas Ave, Escondido, CA 92025 • 760 233-0789
  • San Ramon, CA
  • Vallejo, CA
  • Pleasanton, CA
  • Commerce Township, MI
  • San Diego, CA
  • Livermore, CA
  • 3106 Las Palmas Ave, Escondido, CA 92025 • 760 917-9077

Work

  • Position:
    Construction and Extraction Occupations

Education

  • Degree:
    High school graduate or higher

Medicine Doctors

Scott Holmberg Photo 1

Scott Dewey Holmberg

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Specialties:
Internal Medicine
Preventive Medicine
Public Health & General Preventive Medicine
General Preventive Medicine
Sports Medicine
Education:
Columbia University (1979)

Resumes

Scott Holmberg Photo 2

Owner, Holmberg Automotive

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Position:
Owner at HOLMBERG AUTOMOTIVE
Location:
Greater San Diego Area
Industry:
Automotive
Work:
HOLMBERG AUTOMOTIVE
Owner
Scott Holmberg Photo 3

Pr. Systems Engineer At Rockwell Collins

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Position:
Pr. Systems Engineer at Rockwell Collins
Location:
Cedar Rapids, Iowa
Industry:
Aviation & Aerospace
Work:
Rockwell Collins - Cedar Rapids, Iowa Area since Jan 2013
Pr. Systems Engineer
Education:
Stevens Institute of Technology 2011 - 2012
Graduate Certificate, Systems Engineering and Architecting
North Dakota State University 1991 - 1995
BS, Electrical Engineering
Scott Holmberg Photo 4

Computer Software Professional

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Location:
Temecula, California
Industry:
Computer Networking
Work:
Volt / Aerotek - Tempe, AZ Jul 2012 - Feb 2013
Tier I Technical Support

Newport Mesa Unified School District Jan 2003 - Jan 2008
Teachers Assistant

City of Costa Mesa Jan 2001 - Jan 2003
After School Program Leader
Education:
Computer Training Academy 2010 - 2012
Certifications, Computer/Information Technology Administration and Management
California State University-Long Beach 2006 - 2008
+40 Units, Liberal Arts and Sciences/Liberal Studies
Orange Coast College 1988 - 2003
Transferred to CSULB with General Education, Liberal Arts and Sciences/Liberal Studies
Skills:
Microsoft Windows 98
Windows Server 2003
Windows 7
Windows XP Professional
Virtualization
Desktop Support
Network Administration
Network Infrastructure
VPN
Windows Server 2008
Disaster Recovery
DNS management
RAID
Router Configuration
Active Directory
Firewalls
Computer Hardware
Backup Solutions
Wiring/Cabling
TCP/IP
IPX/SPX
NAT
RIP
IGRP
PPP
L2TP
WINS
DHCP Management
WSUS
HTTP
HTTPS
FTP
Ethernet
Point to Point
ISDN
Twisted Pair
Fiber Optics
Coax
Serial Communications
Wireless Networking
Switches
Bridges
Hubs
Wireless Access Points
Printers
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Scott Holmberg

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Location:
Greater San Diego Area
Industry:
Semiconductors
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Scott Holmberg

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Location:
United States

Us Patents

  • Active Matrix Esd Protection And Testing Scheme

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  • US Patent:
    6613650, Sep 2, 2003
  • Filed:
    May 10, 2000
  • Appl. No.:
    09/569111
  • Inventors:
    Scott H. Holmberg - Pleasanton CA
  • Assignee:
    Hyundai Electronics America - San Jose CA
  • International Classification:
    H01L 2100
  • US Classification:
    438438, 438 30, 349 38
  • Abstract:
    An improved method of manufacturing active matrix displays with ESD protection through final assembly and in process testing and repair capabilities. At least a first set of shorting bars is formed adjacent the row and column matrix. The shorting bars are respectively coupled to one another in series to allow testing of the matrix elements. A first shorting bar is coupled to the row lines and a second shorting bar is coupled to the column lines. The shorting bars can remain coupled to the matrix through final assembly to provide ESD protection and final assembly and testing capability.
  • Method Of Manufacturing Thin Film Transistors And Transistors Made Thereby

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  • US Patent:
    4545112, Oct 8, 1985
  • Filed:
    Aug 15, 1983
  • Appl. No.:
    6/523654
  • Inventors:
    Scott H. Holmberg - San Ramon CA
    Richard A. Flasck - San Ramon CA
  • Assignee:
    Alphasil Incorporated - Sunnyvale CA
  • International Classification:
    H01L 2978
    H01L 2702
  • US Classification:
    29577R
  • Abstract:
    An improved method of manufacturing thin film transistors. A gate metal is patterned to form a gate electrode and a drain, gate and source contact pad for the transistor. To reduce shorts and capacitance between the gate and the source or the drain, an intermetal dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.
  • Method Of Illuminating Flat Panel Displays To Provide Crt Appearing Displays

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  • US Patent:
    4842378, Jun 27, 1989
  • Filed:
    Apr 7, 1987
  • Appl. No.:
    7/035515
  • Inventors:
    Richard A. Flasck - San Ramon CA
    Benny Irwin - San Jose CA
    Scott H. Holmberg - San Ramon CA
  • Assignee:
    Alphasil, Inc. - Fremont CA
  • International Classification:
    G02F 113
    F21V 704
    F21L 1900
    F21P 100
  • US Classification:
    350345
  • Abstract:
    LCD screen illumination is provided by a neon tube formed to fit closely adjacent the screen. A tube formed to fit around the periphery of the screen shielded from the viewer's eyes can be utilized to front light the screen. A serpentine shaped tube can be placed adjacent the back of the screen to back light the screen. The tube can be formed to have a size coextensive with the screen configuration and can have a light diffuser between the tube and the screen to provide uniform illumination. The tube can provide any desired color, an adjustable high maximum surface brightness, high electrical efficiency and a narrow profile.
  • Method Of Making An Active Matrix Display Incorporating An Improved Tft

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  • US Patent:
    5731216, Mar 24, 1998
  • Filed:
    Mar 27, 1996
  • Appl. No.:
    8/618597
  • Inventors:
    Scott H. Holmberg - Pleasanton CA
    Rajesh Swaminathan - Santa Clara CA
  • Assignee:
    Image Quest Technologies, Inc. - Fremont CA
  • International Classification:
    H01L 2184
    H01L 21265
  • US Classification:
    437 40
  • Abstract:
    Improved multilayer matrix line including inverted gate thin film matrix transistors to reduce defects in and enhance performance of matrix devices incorporating the transistors, including active matrix displays. The inverted gate line is formed in a multilayer metal structure deposited sequentially before patterning of a first bottom refractory layer, an aluminum layer and a second refractory layer for the gate structure. The aluminum layer is anodized adjacent the gate to prevent step coverage problems. A further improvement is provided when forming an active matrix display storage capacitor utilizing the multilayer gate structure.
  • Method Of Manufacturing Flat Panel Backplanes, Display Transistors And Displays Made Thereby

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  • US Patent:
    4736229, Apr 5, 1988
  • Filed:
    May 11, 1983
  • Appl. No.:
    6/493523
  • Inventors:
    Scott H. Holmberg - Milford MI
    Richard A. Flasck - Rochester MI
  • Assignee:
    Alphasil Incorporated - Fremont CA
  • International Classification:
    H01L 2712
  • US Classification:
    357 4
  • Abstract:
    An improved method of manufacturing active matrix display backplanes with thin film transistors thereon and a drive scheme therefor. A refractory metal covers the indium tin oxide (ITO) layer, patterned to form a gate electrode for the transistors and to protect the pixel pad ITO during formation of the transistors. To reduce shorts and capacitance between the gate and the source or the drain, an intermetal dielectric is patterned to form a central portion over a planar portion of the gate region and to cover any exposed gate edges.
  • Aluminum-Refractory Metal Interconnect With Anodized Periphery

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  • US Patent:
    4531144, Jul 23, 1985
  • Filed:
    Feb 21, 1984
  • Appl. No.:
    6/580291
  • Inventors:
    Scott H. Holmberg - Escondido CA
  • Assignee:
    Burroughs Corporation - Detroit MI
  • International Classification:
    H01H 2348
    H01H 2946
  • US Classification:
    357 71
  • Abstract:
    A metal interconnect structure for an integrated circuit with a layer of refractory metal over the structure to prevent formation of hillocks, thereby eliminating a hard anodization step. The refractory metal may be tantalum, titanium-tungsten alloys, hafnium, or other refractory metals which form insulating anodic oxides.
  • Color Filter Structure And Method Of Making

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  • US Patent:
    5954559, Sep 21, 1999
  • Filed:
    Jan 13, 1997
  • Appl. No.:
    8/785140
  • Inventors:
    Scott H. Holmberg - Pleasanton CA
    Shan Zhu - Fremont CA
  • Assignee:
    Image Quest Technologies, Inc. - Fremont CA
  • International Classification:
    G02F 11335
  • US Classification:
    445 24
  • Abstract:
    An improved planar color filter structure to reduce defects in the display devices incorporating the color filter structures, including active matrix displays. A color filter substrate has a thicker polyamide black matrix formed thereon and a transparent polyamide layer formed over the black matrix. The transparent layer is exposed through the black matrix and developed to remove the unexposed portions over the black matrix. The resulting surface is substantially planar and facilitates the forming of the remaining layers to form a substantially planar color filter structure.
  • Tft, Method Of Making And Matrix Displays Incorporating The Tft

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  • US Patent:
    6066506, May 23, 2000
  • Filed:
    Nov 18, 1998
  • Appl. No.:
    9/195382
  • Inventors:
    Scott H. Holmberg - Pleasanton CA
    Ronald L. Huff - San Ramon CA
  • Assignee:
    Hyundai Electronics America, Inc. - San Jose CA
  • International Classification:
    H01L 2100
  • US Classification:
    438 4
  • Abstract:
    Improved thin film transistors to reduce defects in the devices incorporating the transistors, including active matrix displays. A first improvement is accomplished by forming a dual insulator layer over the bottom metal layer, which can be the gate line and also the row line in an active matrix display. The first insulator layer is formed by anodizing the metal layer and the second insulator layer is deposited onto the first layer. The dual insulator structure layer can be reanodized to eliminate the effect of pinholes. A second improvement includes providing an interdigitated transistor structure to increase the channel width, minimize internal shorting and minimize the drain capacitance. The interdigitated structure includes at least one source or drain finger formed between at least two drain or source fingers, respectively. A shorted source finger can be disconnected to maintain an operative transistor.

News

Miriam Hospital Physician Advocates Awareness, Collaboration To Combat ...

Miriam Hospital physician advocates awareness, collaboration to combat ...

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  • featuring the installation of 80 bonfires floating on Providence's three rivers, is part of the first free, evening artistic summer HCV festival to help bring awareness to the disease. Scott Holmberg, MD, MPH, Chief of Epidemiology and Surveillance for Viral Hepatitis at the CDC, will be the guest of honor.
  • Date: Jul 24, 2014
  • Category: Health
  • Source: Google

Hepatitis C Now Kills More Americans Than HIV

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  • SOURCES: Scott Holmberg, M.D., M.P.H., chief, epidemiology and surveillance branch, division of viral hepatitis, U.S. Centers for Disease Control and Prevention; Eugene R. Schiff, M.D., Leonard Miller Professor of Medicine, director, Schiff Liver Institute/Center for Liver Diseases, University of Mi
  • Date: Feb 21, 2012
  • Category: Health
  • Source: Google

Hepatitis C Now Kills More Americans Than HIV

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  • "These data underscore the urgent need to address the health threat posed by chronic hepatitis B and C in the United States," said investigator Dr. Scott Holmberg, chief of the Epidemiology and Surveillance Branch in CDC's Division of Viral Hepatitis.
  • Date: Feb 21, 2012
  • Category: Health
  • Source: Google

Youtube

Chronic Hepatitis B and C Cohort Study (CHeCS...

With funding from the Viral Hepatitis Action Coalition, the Centers fo...

  • Category:
    Nonprofits & Activism
  • Uploaded:
    02 May, 2011
  • Duration:
    55s

Googleplus

Scott Holmberg Photo 7

Scott Holmberg

Scott Holmberg Photo 8

Scott Holmberg

Myspace

Scott Holmberg Photo 9

Scott Holmberg

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Locality:
duluth mn, Minnesota
Gender:
Male
Birthday:
1942

Classmates

Scott Holmberg Photo 10

Scott Holmberg

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Schools:
Queen of Peace School Buffalo NY 1980-1983, Queen of Martyrs School Cheektowaga NY 1983-1987, Our Lady Help of Christians School Cheektowaga NY 1987-1990
Community:
Ronald Kwiatkowski, Krystyne Lewis
Scott Holmberg Photo 11

Scott Holmberg, Buhler Hi...

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Scott Holmberg Photo 12

Our Lady Help of Christia...

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Graduates:
Scott Holmberg (1987-1990),
Mary Lane (1962-1970),
Colleen Zimmerman (1973-1982),
Daniel Coleman (1965-1973)
Scott Holmberg Photo 13

Sahuaro High School, Tucs...

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Graduates:
Scott Holmberg (1977-1981),
Sara Fischer (1993-1997),
William Reid (1983-1987),
Michael Villafane (1977-1981),
Randy Boykin (1974-1978)

Facebook

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Scott Holmberg

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Scott Holmberg Photo 15

Scott Holmberg

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Scott Holmberg Photo 16

Scott Dewey Holmberg

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Scott Holmberg Photo 17

Scott Holmberg

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Scott Holmberg Photo 18

Scott Holmberg

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Scott Holmberg Photo 19

Scott Holmberg

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Scott Holmberg Photo 20

Scott Holmberg

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Scott Holmberg Photo 21

Scott Holmberg

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