Ronald C Lacoe

US Patent:

20050116295, Jun 2, 2005

Filed:

Dec 1, 2003

Appl. No.:

10/725685

Inventors:

Donald Mayer - Palos Verdes Estates CA, US
Jon Osborn - Thousand Oaks CA, US
Ronald Lacoe - Newbury Park CA, US
Everett King - Granada Hills CA, US

International Classification:

H01L027/01

US Classification:

257354000

Abstract:

An annular segment MOSFET structure has reduced drain electric fields for a given applied voltage and dimensional sizing for improved reliability from damage by reducing high energy hot carriers laterally traversing the channel by reducing the intensity of electric fields in the MOSFET structure by creating diverging electric field lines with decreased electric field strength at the drain, while enabling compact integrated layouts of multiple MOSFETs within a square area of surface silicon.