Ronald H Hiskes

US Patent:

59422840, Aug 24, 1999

Filed:

Nov 27, 1996

Appl. No.:

8/757864

Inventors:

Ronald Hiskes - Palo Alto CA
Rene P. Helbing - Palo Alto CA
Stephen A. DiCarolis - Santa Clara CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

C23C 1600

US Classification:

4272556

Abstract:

A method for depositing a thin film including a sulfide of a metal on a substrate. First and second vapor streams are generated and combined in the vicinity of the substrate. The first vapor stream includes an organic compound containing the metal is generated. The second vapor stream includes a mercaptan. The preferred mercaptan is tertrary-butyl-mercaptan. The preferred metal precursor is a. beta. -diketonate of the metal.

US Patent:

54475694, Sep 5, 1995

Filed:

Dec 12, 1990

Appl. No.:

7/970660

Inventors:

Ronald Hiskes - Palo Alto CA
Stephen DiCarolis - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118726

Abstract:

A system for MOCVD fabrication of superconducting oxide thin films provides a feed tube having a narrow slot along its length with a uniform mixture of powdered precursor materials packed inside the tube. The mixture composition is such that the resulting film has the desired stoichiometry. The tube moves downward at a controlled rate past a bank of heating lamps surrounded by a heat reflector. At each position of the tube this structure heats a localized section of the precursor material, with a sharp temperature gradient at the boundary of the section so that the heating is confined to this section. The precursor material in the heated section is substantially completely vaporized, with negligible decomposition and nonvolatile residue formation, and the vaporization rate is governed by the downward velocity of the tube. The vaporized material escapes through the longitudinal slot, and is swept by a carrier gas into a reaction zone. Oxygen is mixed with the gas stream, and the reaction products are deposited as a thin film on the substrate.

US Patent:

51984113, Mar 30, 1993

Filed:

Dec 2, 1988

Appl. No.:

7/279465

Inventors:

Ronald Hiskes - Palo Alto CA
Martha L. Narbut - San Mateo CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

H01L 3900
H01B 1200

US Classification:

505 1

Abstract:

A method and apparatus are disclosed for chemically vapor depositing a thin film of an oxide based superconductor on a substrate, which is preferably a substrate comprising superconducting material. Gaseous forms of the respective reactants are first formed and then reacted together in a reaction zone adjacent a spinning substrate. In a preferred embodiment, the reactants are exposed to UV light during the reaction to catalyze the reaction.

US Patent:

43198031, Mar 16, 1982

Filed:

Nov 24, 1978

Appl. No.:

5/963253

Inventors:

Robert A. Burmeister - Saratoga CA
Paul E. Greene - Los Altos CA
Ronald Hiskes - Palo Alto CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

G02B 5172

US Classification:

350 9633

Abstract:

An optical fiber is coated with an inorganic non-metallic coating to form a thin seal. The coating is preferably applied on-line by a process such as chemical vapor deposition.

US Patent:

50772716, Dec 31, 1991

Filed:

Dec 2, 1988

Appl. No.:

7/278880

Inventors:

Ronald Hiskes - Palo Alto CA
Martha L. Narbut - San Mateo CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

C30B 1530
B05D 512

US Classification:

505 1

Abstract:

A method is disclosed for forming a thin film of an oxide based superconductor on a substrate, which is preferably a substrate comprising superconducting material, which comprises forming an oxide based solvent, dissolving in the solvent a stoichiometric amount of compounds capable of forming a superconducting material to form a molten solution, maintaining the molten solution at a temperature of from about 400. degree. to about 1000. degree. C. , immersing a substrate into the resulting molten solution, epitaxially growing a thin film of a superconductor crystal on the substrate, and bubbling a source of oxygen through the molten solution during the epitaxial growth of the thin film superconductor crystal.

US Patent:

48637602, Sep 5, 1989

Filed:

Oct 26, 1988

Appl. No.:

7/266276

Inventors:

Christopher A. Schantz - Redwood City CA
Ronald Hiskes - Palo Alto CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

B05D 506

US Classification:

427163

Abstract:

A CVD furnace, having a gas seal and a liquid seal, for chemical vapor deposition of a coating on a fiber. A CVD process utilizing the CVD furnace allows fibers to be pulled through the furnace without drawing gases entrained by the moving fiber into the reaction chamber of the furnace. The process is a hot fiber process, preferably deriving its heat from the meltdown point in an optical fiber pulling process. A coat containing carbon is applied by supplying a reactant containing a carbon having a triple bond. A small amount of silane is also supplied to the reaction chamber to act as an oxygen getter and to prevent tar-like reaction products from clogging the furnace.

US Patent:

45126291, Apr 23, 1985

Filed:

Mar 30, 1982

Appl. No.:

6/363722

Inventors:

Eric G. Hanson - Burlingame CA
Ronald Hiskes - Palo Alto CA
Christopher A. Schantz - Santa Clara CA

Assignee:

Hewlett-Packard Company - Palo Alto CA

International Classification:

G02B 514

US Classification:

350 9630

Abstract:

A coating is applied to an optical fiber to form a thin hermetic seal. The coating is preferably applied on-line by a process such as chemical vapor deposition. The coating retains its integrity under extreme conditions of temperature and pressure thereby expanding the range of uses of optical fibers.