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Robert A Sabsowitz

age ~71

from Santa Clara, CA

Also known as:
  • Robert Andrew Sabsowitz
  • Bob A Sabsowitz
  • Rob A Sabsowitz
  • Robert Z
Phone and address:
2193 Dianne Dr, Santa Clara, CA 95050
408 712-3536

Robert Sabsowitz Phones & Addresses

  • 2193 Dianne Dr, Santa Clara, CA 95050 • 408 712-3536
  • Watsonville, CA
  • Santa Cruz, CA
  • 2193 Dianne Dr, Santa Clara, CA 95050

Us Patents

  • Method Of Preparing Light-Sensitive Integrated Circuits For Packaging

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  • US Patent:
    6548323, Apr 15, 2003
  • Filed:
    Jul 31, 2000
  • Appl. No.:
    09/629255
  • Inventors:
    Jeffrey R. Perry - Cupertino CA
    Michael E. Thomas - Milpitas CA
    Robert A. Sabsowitz - Santa Clara CA
    Reda R. Razouk - Sunnyvale CA
    Aaron G. Simmons - San Jose CA
  • Assignee:
    National Semiconductor Corporation - Santa Clara CA
  • International Classification:
    H01L 2100
  • US Classification:
    438 64, 438114, 438465
  • Abstract:
    A process for preparing a light-sensitive integrated circuit (IC) for packaging that provides a reduced exposure of the light-sensitive IC to light. The process includes providing a semiconductor substrate (e. g. , a silicon wafer) with a plurality of light-sensitive ICs formed in/on its upper surface. The lower surface is optionally coated with opaque material. Next, the semiconductor substrate is diced to form individual light-sensitive ICs, each of which has a semiconductor substrate lower surface and semiconductor substrate lateral edges. The semiconductor substrate lateral edges (and optionally backside) are then spray coated with an opaque material (e. g. , opaque ink) to form an opaque layer covering the semiconductor substrate lateral edges. The opaque layer prevents light from entering the semiconductor substrate through the lateral edges and interfering with the operation of the light-sensitive IC. The inventive process is simple and inexpensive, employing, for example, piezoelectric injectors to spray coat opaque ink on the semiconductor substrate lateral edges as the individual ICs are conveyed through a pass-through.

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