NASA since Aug 1999
Research Electronics Engineer
Ford Microelectronics, Inc. Jan 1998 - Jun 1999
Senior Research Engineer
Kulite Semiconductor Products, Inc. Jan 1993 - Nov 1997
Senior Scientist
Education:
New Jersey Institute of Technology 1988 - 1996
BSEE, MSEE, PhD, Electrical Engineering
School of Telecommunications, Oshodi, Lagos, Nigeria 1980 - 1983
Ibadan Boys High School, Okebola, Ibadan, Nigeria
West African School Certificate
Skills:
Sensors Mems Simulations Characterization Physics R&D Semiconductors Thin Films Matlab Materials Science Microfabrication Design of Experiments Labview Micro/Nano Fabrication Mems Mems Reliability Research Ansys
Interests:
Learning Acoustic Guitar Reading Biking Mississippi Delta Blues and Crossovers Long Distance Driving Movies
Us Patents
Method And Apparatus For Obtaining A Precision Thickness In Semiconductor And Other Wafers
A method and apparatus for processing a wafer comprising a material selected from an electrical semiconducting material and an electrical insulating material. The wafer has opposed generally planar front and rear sides and a peripheral edge, wherein said wafer is pressed against a pad in the presence of a slurry to reduce its thickness. The thickness of the wafer is controlled by first forming a recess such as a dimple on the rear side of the wafer. A first electrical conducting strip extends from a first electrical connection means to the base surface of the recess to the second electrical connector. The first electrical conducting strip overlies the base surface of the recess. There is also a second electrical conductor with an electrical potential source between the first electrical connector and the second electrical connector to form. In combination with the first electrical conducting strip, the second electrical conductor forms a closed electrical circuit, and an electrical current flows through the closed electrical circuit. From the front side of the wafer the initial thickness of the wafer is reduced by lapping until the base surface of the recess is reached.
The United States of America as represented by the National Aeronautics and Space Administration - Washington DC
International Classification:
B05B 306
US Classification:
239251, 239261, 239381, 239419, 239494, 239496
Abstract:
A nozzle body and assembly for delivering atomized fuel to a combustion chamber. The nozzle body is rotatably mounted onto a substrate. One or more curvilinear fuel delivery channels are in flow communication with an internal fuel distribution cavity formed in the nozzle body. Passage of pressurized fuel through the nozzle body causes the nozzle body to rotate. Components of the nozzle assembly are formed of silicon carbide having surfaces etched by deep reactive ion etching utilizing MEMS technology. A fuel premix chamber is carried on the substrate in flow communication with a supply passage in the nozzle body.
Silicon Carbide High Temperature Anemometer And Method For Assembling The Same
Robert S. Okojie - Strongsville OH Gustave C. Fralick - Middleburg Heights OH George J. Saad - Atwater OH
Assignee:
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
International Classification:
G01P 506
US Classification:
7386185, 7320411, 7320422, 338 25, 338 28
Abstract:
A high temperature anemometer includes a pair of substrates. One of the substrates has a plurality of electrodes on a facing surface, while the other of the substrates has a sensor cavity on a facing surface. A sensor is received in the sensor cavity, wherein the sensor has a plurality of bondpads, and wherein the bond pads contact the plurality of electrodes when the facing surfaces are mated with one another. The anemometer further includes a plurality of plug-in pins, wherein the substrate with the cavity has a plurality of trenches with each one receiving a plurality of plug-in pins. The plurality of plug-in pins contact the plurality of electrodes when the substrates are mated with one another. The sensor cavity is at an end of one of the substrates such that the sensor partially extends from the substrate. The sensor and the substrates are preferably made of silicon carbide.
Multi-Functional Micro Electromechanical Devices And Method Of Bulk Manufacturing Same
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
International Classification:
H01L 2100
US Classification:
438 52, 257417
Abstract:
A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone.
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
International Classification:
G01P 1500
US Classification:
7351416, 257417, 257E21507
Abstract:
A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone.
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
International Classification:
C23F 100
US Classification:
216 2
Abstract:
A nozzle body and assembly for delivering atomized fuel to a combustion chamber. The nozzle body is rotatably mounted onto a substrate. One or more curvilinear fuel delivery channels are in flow communication with an internal fuel distribution cavity formed in the nozzle body. Passage of pressurized fuel through the nozzle body causes the nozzle body to rotate. Components of the nozzle assembly are formed of silicon carbide having surfaces etched by deep reactive ion etching utilizing MEMS technology. A fuel premix chamber is carried on the substrate in flow communication with a supply passage in the nozzle body.
Method Of Assembling A Silicon Carbide High Temperature Anemometer
Robert S. Okojie - Strongsville OH Gustave C. Fralick - Middleburg Heights OH George J. Saad - Atwater OH
Assignee:
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
International Classification:
H01L 2100
US Classification:
438 52
Abstract:
A high temperature anemometer includes a pair of substrates. One of the substrates has a plurality of electrodes on a facing surface, while the other of the substrates has a sensor cavity on a facing surface. A sensor is received in the sensor cavity, wherein the sensor has a plurality of bondpads, and wherein the bond pads contact the plurality of electrodes when the facing surfaces are mated with one another. The anemometer further includes a plurality of plug-in pins, wherein the substrate with the cavity has a plurality of trenches with each one receiving a plurality of plug-in pins. The plurality of plug-in pins contact the plurality of electrodes when the substrates are mated with one another. The sensor cavity is at an end of one of the substrates such that the sensor partially extends from the substrate. The sensor and the substrates are preferably made of silicon carbide.
Mems Direct Chip Attach Packaging Methodologies And Apparatuses For Harsh Environments
Methods of bulk manufacturing high temperature sensor sub-assembly packages are disclosed and claimed. Sensors are sandwiched between a top cover and a bottom cover so as to enable the peripheries of the top covers, sensors and bottom covers to be sealed and bound securely together are disclosed and claimed. Sensors are placed on the bottom covers leaving the periphery of the bottom cover exposed. Likewise, top covers are placed on the sensors leaving the periphery of the sensor exposed. Individual sensor sub-assemblies are inserted into final packaging elements which are also disclosed and claimed. Methods of directly attaching wires or pins to contact pads on the sensors are disclosed and claimed. Sensors, such as pressure sensors and accelerometers, and headers made out of silicon carbide and aluminum nitride are disclosed and claimed. Reference cavities are formed in some embodiments disclosed and claimed herein where top covers are not employed.
Name / Title
Company / Classification
Phones & Addresses
Robert Okojie President
Cheyenne Mountain Laboratories Semiconductors and Related Devices
8550 Ilex Dr, Colorado Springs, CO 80920 719 266-9316