Richard F Stoltz

US Patent:

6432317, Aug 13, 2002

Filed:

Aug 4, 1994

Appl. No.:

08/286106

Inventors:

Monte A. Douglas - Coppell TX
Richard A. Stoltz - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 213065

US Classification:

216 51, 216 67, 216 75, 216 77, 216 79, 216 62, 438720, 438723, 438724, 438766, 438770, 438945, 148DIG 105

Abstract:

This is a method for masking a structure for patterning micron and submicron features, the method comprises: forming at least one monolayer of adsorbed molecules on the structure; prenucleating portions of the adsorbed layer by exposing the portions corresponding to a desired pattern of an energy source ; and selectively forming build-up layers over the prenucleated portions to form a mask over the structure to be patterned. Other methods are also disclosed.

US Patent:

7115514, Oct 3, 2006

Filed:

Oct 1, 2004

Appl. No.:

10/957271

Inventors:

Richard Stoltz - Plano TX, US

Assignee:

Raydiance, Inc. - Orlando FL

International Classification:

H01L 21/302

US Classification:

438690, 438940

Abstract:

The present invention relates to methods and systems for ablation based material removal configuration for use in semiconductor manufacturing that includes the steps of generating an initial wavelength-swept-with-time optical pulse in an optical pulse generator, amplifying the initial pulse, compressing the amplified pulse to a duration of less than about 10 picoseconds and applying the compressed optical pulse to the wafer surface, to remove material from, e. g. , wafer surface.

US Patent:

7367969, May 6, 2008

Filed:

Aug 11, 2004

Appl. No.:

10/916365

Inventors:

Richard Stoltz - Plano TX, US
Peter J. Delfyett - Oviedo FL, US

Assignee:

Raydiance, Inc. - Orlando FL

International Classification:

A61B 18/18
A61B 18/20

US Classification:

606 9, 606 10, 606 12, 607 88, 607 89, 128898

Abstract:

The present invention includes a method of surgical material removal from a body by optical-ablation with controlled pulse energy from an amplifier including inputting an ablation-threshold-pulse-energy-for-material-being-ablated signal; controlling the energy of a pulse and the pulse repetition rate and by knowing the type of material being removed, the system can control the removal to predetermined rate and, thus knowing the removal rate, it can know how long to run to stop at the predetermined volume.

US Patent:

7963958, Jun 21, 2011

Filed:

Aug 21, 2007

Appl. No.:

11/894867

Inventors:

Richard Stoltz - Plano TX, US
Jeff Bullington - Chuluota FL, US

Assignee:

Raydiance, Inc. - Petaluma CA

International Classification:

A61B 18/18

US Classification:

606 10, 606 11, 607 88, 607 89, 359333, 359345

Abstract:

The present invention includes an apparatus and method of surgical ablative material removal “in-vivo” or from an outside surface with a short optical pulse that is amplified and compressed using either an optically-pumped-amplifier and air-path between gratings compressor combination or a SOA and chirped fiber compressor combination, wherein the generating, amplifying and compressing are done within a portable system.

US Patent:

8398622, Mar 19, 2013

Filed:

Dec 6, 2010

Appl. No.:

12/961390

Inventors:

Richard Stoltz - Plano TX, US
Jeff Bullington - Chuluota FL, US

Assignee:

Raydiance, Inc. - Petaluma CA

International Classification:

A61B 18/20
H01S 3/00

US Classification:

606 10, 606 12, 607 88, 607 89, 359333, 3593414

Abstract:

The present invention includes an apparatus and method of surgical ablative material removal “in-vivo” or from an outside surface with a short optical pulse that is amplified and compressed using either an optically-pumped-amplifier and air-path between gratings compressor combination or a SOA and chirped fiber compressor combination, wherein the generating, amplifying and compressing are done within a portable system.

US Patent:

7361171, Apr 22, 2008

Filed:

Aug 11, 2004

Appl. No.:

10/916017

Inventors:

Richard Stoltz - Plano TX, US
Jeff Bullington - Chuluota FL, US

Assignee:

Raydiance, Inc. - Orlando FL

International Classification:

A61B 18/18

US Classification:

606 9, 606 10, 607 88, 128898

Abstract:

The present invention includes an apparatus and method of surgical ablative material removal “in-vivo” or from an outside surface with a short optical pulse that is amplified and compressed using either an optically-pumped-amplifier and air-path between gratings compressor combination or a SOA and chirped fiber compressor combination, wherein the generating, amplifying and compressing are done within a man-portable system.

US Patent:

20020182763, Dec 5, 2002

Filed:

Mar 22, 2002

Appl. No.:

10/104576

Inventors:

Richard Stoltz - Plano TX, US
Jeff Bullington - Orlando FL, US

International Classification:

H01L021/00

US Classification:

438/022000

Abstract:

Our wafer scale processing techniques produce chip-laser-diodes with a diffraction grating that redirects output light out the top and/or bottom surfaces. Noise reflections are carefully controlled, allowing significant reduction of the signal fed to the active region. This can provide an improved method of horizontally generating light within a chip-laser-diode and transmitting a substantial portion of the generated light vertically out of the diode, using a disordered waveguide-region. Generally, the waveguide region is disordered by rapid-thermal-annealing. Preferably, the disordering of the waveguide region by rapid-thermal-annealing is done while masking portions of the diode other than the waveguide region with photoresist or with a mechanical mask, and preferably is done with light passed through an optical pass filter designed to pass the output wavelength of the diode.

US Patent:

20020191666, Dec 19, 2002

Filed:

Mar 22, 2002

Appl. No.:

10/104501

Inventors:

Richard Stoltz - Plano TX, US
Jeff Bullington - Orlando FL, US

International Classification:

H01S005/00
H01S003/08

US Classification:

372/102000, 372/050000

Abstract:

Our wafer scale processing techniques produce chip-laser-diodes with a diffraction grating that redirects output light out the top and/or bottom surfaces. Noise reflections are carefully controlled, allowing significant reduction of the signal fed to the active region. This can be an improved method of diode fabrication where the top metal contact has a portion of the contact adjacent the top electrode that is of tungsten metal. The tungsten metal is preferably CVD tungsten. Photoresist has preferably been deposited prior to the deposition of the CVD tungsten and the pattern for the metal contact is opened in the photoresist, and then the CVD tungsten is deposited, and then the photoresist is removed, also removing any tungsten deposited on the photoresist. Preferably the CVD tungsten is deposited by using hydrogen reduction of tungsten hexafluoride.